Review of a monographs

In their monograph the authors have systematized and generalized the results of numerous theoretical, as well as experimental, investigations of interactions between phases at the metal−InP (GaAs) interfaces and degradation mechanisms in indium phosphide and gallium arsenide Schottky barrier device...

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Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:1999
Main Author: Glinchuk, K.D.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 1999
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Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/119878
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Review of a monographs / K.D. Glinchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 3. — С. 111. назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
_version_ 1862643797147516928
author Glinchuk, K.D.
author_facet Glinchuk, K.D.
citation_txt Review of a monographs / K.D. Glinchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 3. — С. 111. назв. — англ.
collection DSpace DC
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
description In their monograph the authors have systematized and generalized the results of numerous theoretical, as well as experimental, investigations of interactions between phases at the metal−InP (GaAs) interfaces and degradation mechanisms in indium phosphide and gallium arsenide Schottky barrier device structures. For barrier contacts with a transition layer the aging mechanisms and role of mass transport in them are discussed. The physico-chemical peculiarities of the metal−InP (GaAs) interface formation, as well as feasibility of prediction of interactions between phases, are considered.
first_indexed 2025-12-01T08:13:01Z
format Article
fulltext
id nasplib_isofts_kiev_ua-123456789-119878
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
issn 1560-8034
language English
last_indexed 2025-12-01T08:13:01Z
publishDate 1999
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
record_format dspace
spelling Glinchuk, K.D.
2017-06-10T08:10:45Z
2017-06-10T08:10:45Z
1999
Review of a monographs / K.D. Glinchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 3. — С. 111. назв. — англ.
1560-8034
https://nasplib.isofts.kiev.ua/handle/123456789/119878
In their monograph the authors have systematized and generalized the results of numerous theoretical, as well as experimental, investigations of interactions between phases at the metal−InP (GaAs) interfaces and degradation mechanisms in indium phosphide and gallium arsenide Schottky barrier device structures. For barrier contacts with a transition layer the aging mechanisms and role of mass transport in them are discussed. The physico-chemical peculiarities of the metal−InP (GaAs) interface formation, as well as feasibility of prediction of interactions between phases, are considered.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Review of a monographs
Review of a monographs
Article
published earlier
spellingShingle Review of a monographs
Glinchuk, K.D.
Review of a monographs
title Review of a monographs
title_full Review of a monographs
title_fullStr Review of a monographs
title_full_unstemmed Review of a monographs
title_short Review of a monographs
title_sort review of a monographs
topic Review of a monographs
topic_facet Review of a monographs
url https://nasplib.isofts.kiev.ua/handle/123456789/119878
work_keys_str_mv AT glinchukkd reviewofamonographs