Review of a monographs
In their monograph the authors have systematized and generalized the results of numerous theoretical, as well as experimental, investigations of interactions between phases at the metal−InP (GaAs) interfaces and degradation mechanisms in indium phosphide and gallium arsenide Schottky barrier device...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 1999 |
| Main Author: | |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
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| Subjects: | |
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/119878 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Review of a monographs / K.D. Glinchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 3. — С. 111. назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862643797147516928 |
|---|---|
| author | Glinchuk, K.D. |
| author_facet | Glinchuk, K.D. |
| citation_txt | Review of a monographs / K.D. Glinchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 3. — С. 111. назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | In their monograph the authors have systematized and generalized the results of numerous theoretical, as well as experimental, investigations of interactions between phases at the metal−InP (GaAs) interfaces and degradation mechanisms in indium phosphide and gallium arsenide Schottky barrier device structures. For barrier contacts with a transition layer the aging mechanisms and role of mass transport in them are discussed. The physico-chemical peculiarities of the metal−InP (GaAs) interface formation, as well as feasibility of prediction of interactions between phases, are considered.
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| first_indexed | 2025-12-01T08:13:01Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-119878 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-01T08:13:01Z |
| publishDate | 1999 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Glinchuk, K.D. 2017-06-10T08:10:45Z 2017-06-10T08:10:45Z 1999 Review of a monographs / K.D. Glinchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 3. — С. 111. назв. — англ. 1560-8034 https://nasplib.isofts.kiev.ua/handle/123456789/119878 In their monograph the authors have systematized and generalized the results of numerous theoretical, as well as experimental, investigations of interactions between phases at the metal−InP (GaAs) interfaces and degradation mechanisms in indium phosphide and gallium arsenide Schottky barrier device structures. For barrier contacts with a transition layer the aging mechanisms and role of mass transport in them are discussed. The physico-chemical peculiarities of the metal−InP (GaAs) interface formation, as well as feasibility of prediction of interactions between phases, are considered. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Review of a monographs Review of a monographs Article published earlier |
| spellingShingle | Review of a monographs Glinchuk, K.D. Review of a monographs |
| title | Review of a monographs |
| title_full | Review of a monographs |
| title_fullStr | Review of a monographs |
| title_full_unstemmed | Review of a monographs |
| title_short | Review of a monographs |
| title_sort | review of a monographs |
| topic | Review of a monographs |
| topic_facet | Review of a monographs |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/119878 |
| work_keys_str_mv | AT glinchukkd reviewofamonographs |