Noise spectra and dark current investigations in n⁺-p-type Hg₁₋xCdxTe (x ≈ 0.22) photodiodes
The dark current and noise spectra were investigated in Hg₁₋xCdxTe (x≅0.22) photodiodes at zero and low reverse bias voltages. The photodiodes were prepared by boron implantation into LPE films. The 1/f noise is proved to be correlated with tunneling current via the deep defect states in the gap at...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 1999 |
| Main Authors: | , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/119879 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Noise spectra and dark current investigations in n⁺-p-type Hg₁₋xCdxTe (x ≈ 0.22) photodiodes / Z.F. Ivasiv, F.F. Sizov, V.V. Tetyorkin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 3. — С. 21-25. — Бібліогр.: 16 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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Ivasiv, Z.F. Sizov, F.F. Tetyorkin, V.V. 2017-06-10T08:11:18Z 2017-06-10T08:11:18Z 1999 Noise spectra and dark current investigations in n⁺-p-type Hg₁₋xCdxTe (x ≈ 0.22) photodiodes / Z.F. Ivasiv, F.F. Sizov, V.V. Tetyorkin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 3. — С. 21-25. — Бібліогр.: 16 назв. — англ. 1560-8034 PACS: 85.60.D, 07.57.K, 85.60.G, 73.40 https://nasplib.isofts.kiev.ua/handle/123456789/119879 The dark current and noise spectra were investigated in Hg₁₋xCdxTe (x≅0.22) photodiodes at zero and low reverse bias voltages. The photodiodes were prepared by boron implantation into LPE films. The 1/f noise is proved to be correlated with tunneling current via the deep defect states in the gap at low reverse biases U≤0.1 V. In the photodiodes, where the tunneling current is found to be dominating, the 1/f noise is observed up to frequencies 10⁴ Hz. The decrease of tunneling current results in the decrease of 1/f noise. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Noise spectra and dark current investigations in n⁺-p-type Hg₁₋xCdxTe (x ≈ 0.22) photodiodes Article published earlier |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Noise spectra and dark current investigations in n⁺-p-type Hg₁₋xCdxTe (x ≈ 0.22) photodiodes |
| spellingShingle |
Noise spectra and dark current investigations in n⁺-p-type Hg₁₋xCdxTe (x ≈ 0.22) photodiodes Ivasiv, Z.F. Sizov, F.F. Tetyorkin, V.V. |
| title_short |
Noise spectra and dark current investigations in n⁺-p-type Hg₁₋xCdxTe (x ≈ 0.22) photodiodes |
| title_full |
Noise spectra and dark current investigations in n⁺-p-type Hg₁₋xCdxTe (x ≈ 0.22) photodiodes |
| title_fullStr |
Noise spectra and dark current investigations in n⁺-p-type Hg₁₋xCdxTe (x ≈ 0.22) photodiodes |
| title_full_unstemmed |
Noise spectra and dark current investigations in n⁺-p-type Hg₁₋xCdxTe (x ≈ 0.22) photodiodes |
| title_sort |
noise spectra and dark current investigations in n⁺-p-type hg₁₋xcdxte (x ≈ 0.22) photodiodes |
| author |
Ivasiv, Z.F. Sizov, F.F. Tetyorkin, V.V. |
| author_facet |
Ivasiv, Z.F. Sizov, F.F. Tetyorkin, V.V. |
| publishDate |
1999 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
The dark current and noise spectra were investigated in Hg₁₋xCdxTe (x≅0.22) photodiodes at zero and low reverse bias voltages. The photodiodes were prepared by boron implantation into LPE films. The 1/f noise is proved to be correlated with tunneling current via the deep defect states in the gap at low reverse biases U≤0.1 V. In the photodiodes, where the tunneling current is found to be dominating, the 1/f noise is observed up to frequencies 10⁴ Hz. The decrease of tunneling current results in the decrease of 1/f noise.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/119879 |
| citation_txt |
Noise spectra and dark current investigations in n⁺-p-type Hg₁₋xCdxTe (x ≈ 0.22) photodiodes / Z.F. Ivasiv, F.F. Sizov, V.V. Tetyorkin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 3. — С. 21-25. — Бібліогр.: 16 назв. — англ. |
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| first_indexed |
2025-12-07T21:01:26Z |
| last_indexed |
2025-12-07T21:01:26Z |
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