Noise spectra and dark current investigations in n⁺-p-type Hg₁₋xCdxTe (x ≈ 0.22) photodiodes

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 1999
• ISSN: 1560-8034
• Hauptverfasser: Ivasiv, Z.F., Sizov, F.F., Tetyorkin, V.V.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 1999
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/119879
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Noise spectra and dark current investigations in n⁺-p-type Hg₁₋xCdxTe (x ≈ 0.22) photodiodes / Z.F. Ivasiv, F.F. Sizov, V.V. Tetyorkin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 3. — С. 21-25. — Бібліогр.: 16 назв. — англ.

The dark current and noise spectra were investigated in Hg₁₋xCdxTe (x≅0.22) photodiodes at zero and low reverse bias voltages. The photodiodes were prepared by boron implantation into LPE films. The 1/f noise is proved to be correlated with tunneling current via the deep defect states in the gap at...