Optimization of temperature conditions for the growth of large-size sapphire crystals by the method of horizontally directed crystallization
The coefficient of dislocation gliding over the planes of easy glide depending on the shape of the crystallization front, is determined. The regions of non-uniform distribution of thermal field in the crystal are established. Optimized are the temperature conditions for the growth of large-size (350...
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| Veröffentlicht in: | Functional Materials |
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| Datum: | 2013 |
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | Englisch |
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НТК «Інститут монокристалів» НАН України
2013
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/119907 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Optimization of temperature conditions for the growth of large-size sapphire crystals by the method of horizontally directed crystallization / L.A. Grin, A.T. Budnikov, N.S. Sidelnikova, G.T. Adonkin, V.V. Baranov // Functional Materials. — 2013. — Т. 20, № 1. — С. 111-117 — Бібліогр.: 11 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862571560761556992 |
|---|---|
| author | Grin, L.A. Budnikov, A.T. Sidelnikova, N.S. Adonkin, G.T. Baranov, V.V. |
| author_facet | Grin, L.A. Budnikov, A.T. Sidelnikova, N.S. Adonkin, G.T. Baranov, V.V. |
| citation_txt | Optimization of temperature conditions for the growth of large-size sapphire crystals by the method of horizontally directed crystallization / L.A. Grin, A.T. Budnikov, N.S. Sidelnikova, G.T. Adonkin, V.V. Baranov // Functional Materials. — 2013. — Т. 20, № 1. — С. 111-117 — Бібліогр.: 11 назв. — англ. |
| collection | DSpace DC |
| container_title | Functional Materials |
| description | The coefficient of dislocation gliding over the planes of easy glide depending on the shape of the crystallization front, is determined. The regions of non-uniform distribution of thermal field in the crystal are established. Optimized are the temperature conditions for the growth of large-size (350×500×45 mm³) sapphire crystals by the method of horizontally directed crystallization. The change of the density of dislocations and of their distribution in the crystal bulk after correction of the technological growth conditions, is considered. It is shown that optimization of the axial, horizontal and vertical components of the temperature gradient makes it possible to improve uniformity of the thermal field distribution at the crystallization front in the process of the stationary crystal growth.
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| first_indexed | 2025-11-26T04:52:18Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-119907 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1027-5495 |
| language | English |
| last_indexed | 2025-11-26T04:52:18Z |
| publishDate | 2013 |
| publisher | НТК «Інститут монокристалів» НАН України |
| record_format | dspace |
| spelling | Grin, L.A. Budnikov, A.T. Sidelnikova, N.S. Adonkin, G.T. Baranov, V.V. 2017-06-10T11:02:56Z 2017-06-10T11:02:56Z 2013 Optimization of temperature conditions for the growth of large-size sapphire crystals by the method of horizontally directed crystallization / L.A. Grin, A.T. Budnikov, N.S. Sidelnikova, G.T. Adonkin, V.V. Baranov // Functional Materials. — 2013. — Т. 20, № 1. — С. 111-117 — Бібліогр.: 11 назв. — англ. 1027-5495 DOI: dx.doi.org/10.15407/fm20.01.111 https://nasplib.isofts.kiev.ua/handle/123456789/119907 The coefficient of dislocation gliding over the planes of easy glide depending on the shape of the crystallization front, is determined. The regions of non-uniform distribution of thermal field in the crystal are established. Optimized are the temperature conditions for the growth of large-size (350×500×45 mm³) sapphire crystals by the method of horizontally directed crystallization. The change of the density of dislocations and of their distribution in the crystal bulk after correction of the technological growth conditions, is considered. It is shown that optimization of the axial, horizontal and vertical components of the temperature gradient makes it possible to improve uniformity of the thermal field distribution at the crystallization front in the process of the stationary crystal growth. en НТК «Інститут монокристалів» НАН України Functional Materials Technology Optimization of temperature conditions for the growth of large-size sapphire crystals by the method of horizontally directed crystallization Article published earlier |
| spellingShingle | Optimization of temperature conditions for the growth of large-size sapphire crystals by the method of horizontally directed crystallization Grin, L.A. Budnikov, A.T. Sidelnikova, N.S. Adonkin, G.T. Baranov, V.V. Technology |
| title | Optimization of temperature conditions for the growth of large-size sapphire crystals by the method of horizontally directed crystallization |
| title_full | Optimization of temperature conditions for the growth of large-size sapphire crystals by the method of horizontally directed crystallization |
| title_fullStr | Optimization of temperature conditions for the growth of large-size sapphire crystals by the method of horizontally directed crystallization |
| title_full_unstemmed | Optimization of temperature conditions for the growth of large-size sapphire crystals by the method of horizontally directed crystallization |
| title_short | Optimization of temperature conditions for the growth of large-size sapphire crystals by the method of horizontally directed crystallization |
| title_sort | optimization of temperature conditions for the growth of large-size sapphire crystals by the method of horizontally directed crystallization |
| topic | Technology |
| topic_facet | Technology |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/119907 |
| work_keys_str_mv | AT grinla optimizationoftemperatureconditionsforthegrowthoflargesizesapphirecrystalsbythemethodofhorizontallydirectedcrystallization AT budnikovat optimizationoftemperatureconditionsforthegrowthoflargesizesapphirecrystalsbythemethodofhorizontallydirectedcrystallization AT sidelnikovans optimizationoftemperatureconditionsforthegrowthoflargesizesapphirecrystalsbythemethodofhorizontallydirectedcrystallization AT adonkingt optimizationoftemperatureconditionsforthegrowthoflargesizesapphirecrystalsbythemethodofhorizontallydirectedcrystallization AT baranovvv optimizationoftemperatureconditionsforthegrowthoflargesizesapphirecrystalsbythemethodofhorizontallydirectedcrystallization |