Optimization of temperature conditions for the growth of large-size sapphire crystals by the method of horizontally directed crystallization

• Veröffentlicht in: Functional Materials
• Datum: 2013
• Hauptverfasser: Grin, L.A., Budnikov, A.T., Sidelnikova, N.S., Adonkin, G.T., Baranov, V.V.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: НТК «Інститут монокристалів» НАН України 2013
• Schlagworte: Technology
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/119907
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Optimization of temperature conditions for the growth of large-size sapphire crystals by the method of horizontally directed crystallization / L.A. Grin, A.T. Budnikov, N.S. Sidelnikova, G.T. Adonkin, V.V. Baranov // Functional Materials. — 2013. — Т. 20, № 1. — С. 111-117 — Бібліогр.: 11 назв. — англ.

The coefficient of dislocation gliding over the planes of easy glide depending on the shape of the crystallization front, is determined. The regions of non-uniform distribution of thermal field in the crystal are established. Optimized are the temperature conditions for the growth of large-size (350...