Optimization of temperature conditions for the growth of large-size sapphire crystals by the method of horizontally directed crystallization

• Published in: Functional Materials
• Date: 2013
• Main Authors: Grin, L.A., Budnikov, A.T., Sidelnikova, N.S., Adonkin, G.T., Baranov, V.V.
• Format: Article
• Language: English
• Published: НТК «Інститут монокристалів» НАН України 2013
• Subjects: Technology
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/119907
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Optimization of temperature conditions for the growth of large-size sapphire crystals by the method of horizontally directed crystallization / L.A. Grin, A.T. Budnikov, N.S. Sidelnikova, G.T. Adonkin, V.V. Baranov // Functional Materials. — 2013. — Т. 20, № 1. — С. 111-117 — Бібліогр.: 11 назв. — англ.

The coefficient of dislocation gliding over the planes of easy glide depending on the shape of the crystallization front, is determined. The regions of non-uniform distribution of thermal field in the crystal are established. Optimized are the temperature conditions for the growth of large-size (350...