Optimization of temperature conditions for the growth of large-size sapphire crystals by the method of horizontally directed crystallization
The coefficient of dislocation gliding over the planes of easy glide depending on the shape of the crystallization front, is determined. The regions of non-uniform distribution of thermal field in the crystal are established. Optimized are the temperature conditions for the growth of large-size (350...
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| Veröffentlicht in: | Functional Materials |
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| Datum: | 2013 |
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
НТК «Інститут монокристалів» НАН України
2013
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| Schlagworte: | |
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/119907 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Optimization of temperature conditions for the growth of large-size sapphire crystals by the method of horizontally directed crystallization / L.A. Grin, A.T. Budnikov, N.S. Sidelnikova, G.T. Adonkin, V.V. Baranov // Functional Materials. — 2013. — Т. 20, № 1. — С. 111-117 — Бібліогр.: 11 назв. — англ. |