The increase of crystal growing rate without damaging the smoothness of interface border

This paper provides literature data on non-stationary crystallization of binary melt, making it possible to put forward a hypothesis about a fluctuation mechanism of the structure transitions on the interface surface. Another argument for this hypothesis is the authors' observation results of t...

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Published in:Functional Materials
Date:2013
Main Author: Kanishchev, V.N.
Format: Article
Language:English
Published: НТК «Інститут монокристалів» НАН України 2013
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Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/119910
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:The increase of crystal growing rate without damaging the smoothness of interface border / V.N. Kanishchev // Functional Materials. — 2013. — Т. 20, № 1. — С. 123-126. — Бібліогр.: 7 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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author Kanishchev, V.N.
author_facet Kanishchev, V.N.
citation_txt The increase of crystal growing rate without damaging the smoothness of interface border / V.N. Kanishchev // Functional Materials. — 2013. — Т. 20, № 1. — С. 123-126. — Бібліогр.: 7 назв. — англ.
collection DSpace DC
container_title Functional Materials
description This paper provides literature data on non-stationary crystallization of binary melt, making it possible to put forward a hypothesis about a fluctuation mechanism of the structure transitions on the interface surface. Another argument for this hypothesis is the authors' observation results of the front crystallization at growing a sapphire crystal by horizontal directed crystallization. It has been suggested that it will be possible to grow crystals with a smooth interface border faster at a variable rate of crystallization rather than at a constant one.
first_indexed 2025-12-01T11:26:45Z
format Article
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institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
issn 1027-5495
language English
last_indexed 2025-12-01T11:26:45Z
publishDate 2013
publisher НТК «Інститут монокристалів» НАН України
record_format dspace
spelling Kanishchev, V.N.
2017-06-10T11:08:09Z
2017-06-10T11:08:09Z
2013
The increase of crystal growing rate without damaging the smoothness of interface border / V.N. Kanishchev // Functional Materials. — 2013. — Т. 20, № 1. — С. 123-126. — Бібліогр.: 7 назв. — англ.
1027-5495
DOI: dx.doi.org/10.15407/fm20.01.123
https://nasplib.isofts.kiev.ua/handle/123456789/119910
This paper provides literature data on non-stationary crystallization of binary melt, making it possible to put forward a hypothesis about a fluctuation mechanism of the structure transitions on the interface surface. Another argument for this hypothesis is the authors' observation results of the front crystallization at growing a sapphire crystal by horizontal directed crystallization. It has been suggested that it will be possible to grow crystals with a smooth interface border faster at a variable rate of crystallization rather than at a constant one.
en
НТК «Інститут монокристалів» НАН України
Functional Materials
Technology
The increase of crystal growing rate without damaging the smoothness of interface border
Article
published earlier
spellingShingle The increase of crystal growing rate without damaging the smoothness of interface border
Kanishchev, V.N.
Technology
title The increase of crystal growing rate without damaging the smoothness of interface border
title_full The increase of crystal growing rate without damaging the smoothness of interface border
title_fullStr The increase of crystal growing rate without damaging the smoothness of interface border
title_full_unstemmed The increase of crystal growing rate without damaging the smoothness of interface border
title_short The increase of crystal growing rate without damaging the smoothness of interface border
title_sort increase of crystal growing rate without damaging the smoothness of interface border
topic Technology
topic_facet Technology
url https://nasplib.isofts.kiev.ua/handle/123456789/119910
work_keys_str_mv AT kanishchevvn theincreaseofcrystalgrowingratewithoutdamagingthesmoothnessofinterfaceborder
AT kanishchevvn increaseofcrystalgrowingratewithoutdamagingthesmoothnessofinterfaceborder