The increase of crystal growing rate without damaging the smoothness of interface border
This paper provides literature data on non-stationary crystallization of binary melt, making it possible to put forward a hypothesis about a fluctuation mechanism of the structure transitions on the interface surface. Another argument for this hypothesis is the authors' observation results of t...
Збережено в:
| Опубліковано в: : | Functional Materials |
|---|---|
| Дата: | 2013 |
| Автор: | |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
НТК «Інститут монокристалів» НАН України
2013
|
| Теми: | |
| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/119910 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | The increase of crystal growing rate without damaging the smoothness of interface border / V.N. Kanishchev // Functional Materials. — 2013. — Т. 20, № 1. — С. 123-126. — Бібліогр.: 7 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862646367680200704 |
|---|---|
| author | Kanishchev, V.N. |
| author_facet | Kanishchev, V.N. |
| citation_txt | The increase of crystal growing rate without damaging the smoothness of interface border / V.N. Kanishchev // Functional Materials. — 2013. — Т. 20, № 1. — С. 123-126. — Бібліогр.: 7 назв. — англ. |
| collection | DSpace DC |
| container_title | Functional Materials |
| description | This paper provides literature data on non-stationary crystallization of binary melt, making it possible to put forward a hypothesis about a fluctuation mechanism of the structure transitions on the interface surface. Another argument for this hypothesis is the authors' observation results of the front crystallization at growing a sapphire crystal by horizontal directed crystallization. It has been suggested that it will be possible to grow crystals with a smooth interface border faster at a variable rate of crystallization rather than at a constant one.
|
| first_indexed | 2025-12-01T11:26:45Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-119910 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1027-5495 |
| language | English |
| last_indexed | 2025-12-01T11:26:45Z |
| publishDate | 2013 |
| publisher | НТК «Інститут монокристалів» НАН України |
| record_format | dspace |
| spelling | Kanishchev, V.N. 2017-06-10T11:08:09Z 2017-06-10T11:08:09Z 2013 The increase of crystal growing rate without damaging the smoothness of interface border / V.N. Kanishchev // Functional Materials. — 2013. — Т. 20, № 1. — С. 123-126. — Бібліогр.: 7 назв. — англ. 1027-5495 DOI: dx.doi.org/10.15407/fm20.01.123 https://nasplib.isofts.kiev.ua/handle/123456789/119910 This paper provides literature data on non-stationary crystallization of binary melt, making it possible to put forward a hypothesis about a fluctuation mechanism of the structure transitions on the interface surface. Another argument for this hypothesis is the authors' observation results of the front crystallization at growing a sapphire crystal by horizontal directed crystallization. It has been suggested that it will be possible to grow crystals with a smooth interface border faster at a variable rate of crystallization rather than at a constant one. en НТК «Інститут монокристалів» НАН України Functional Materials Technology The increase of crystal growing rate without damaging the smoothness of interface border Article published earlier |
| spellingShingle | The increase of crystal growing rate without damaging the smoothness of interface border Kanishchev, V.N. Technology |
| title | The increase of crystal growing rate without damaging the smoothness of interface border |
| title_full | The increase of crystal growing rate without damaging the smoothness of interface border |
| title_fullStr | The increase of crystal growing rate without damaging the smoothness of interface border |
| title_full_unstemmed | The increase of crystal growing rate without damaging the smoothness of interface border |
| title_short | The increase of crystal growing rate without damaging the smoothness of interface border |
| title_sort | increase of crystal growing rate without damaging the smoothness of interface border |
| topic | Technology |
| topic_facet | Technology |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/119910 |
| work_keys_str_mv | AT kanishchevvn theincreaseofcrystalgrowingratewithoutdamagingthesmoothnessofinterfaceborder AT kanishchevvn increaseofcrystalgrowingratewithoutdamagingthesmoothnessofinterfaceborder |