The increase of crystal growing rate without damaging the smoothness of interface border
This paper provides literature data on non-stationary crystallization of binary melt, making it possible to put forward a hypothesis about a fluctuation mechanism of the structure transitions on the interface surface. Another argument for this hypothesis is the authors' observation results of t...
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| Published in: | Functional Materials |
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| Date: | 2013 |
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| Format: | Article |
| Language: | English |
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НТК «Інститут монокристалів» НАН України
2013
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/119910 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | The increase of crystal growing rate without damaging the smoothness of interface border / V.N. Kanishchev // Functional Materials. — 2013. — Т. 20, № 1. — С. 123-126. — Бібліогр.: 7 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-119910 |
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Kanishchev, V.N. 2017-06-10T11:08:09Z 2017-06-10T11:08:09Z 2013 The increase of crystal growing rate without damaging the smoothness of interface border / V.N. Kanishchev // Functional Materials. — 2013. — Т. 20, № 1. — С. 123-126. — Бібліогр.: 7 назв. — англ. 1027-5495 DOI: dx.doi.org/10.15407/fm20.01.123 https://nasplib.isofts.kiev.ua/handle/123456789/119910 This paper provides literature data on non-stationary crystallization of binary melt, making it possible to put forward a hypothesis about a fluctuation mechanism of the structure transitions on the interface surface. Another argument for this hypothesis is the authors' observation results of the front crystallization at growing a sapphire crystal by horizontal directed crystallization. It has been suggested that it will be possible to grow crystals with a smooth interface border faster at a variable rate of crystallization rather than at a constant one. en НТК «Інститут монокристалів» НАН України Functional Materials Technology The increase of crystal growing rate without damaging the smoothness of interface border Article published earlier |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
The increase of crystal growing rate without damaging the smoothness of interface border |
| spellingShingle |
The increase of crystal growing rate without damaging the smoothness of interface border Kanishchev, V.N. Technology |
| title_short |
The increase of crystal growing rate without damaging the smoothness of interface border |
| title_full |
The increase of crystal growing rate without damaging the smoothness of interface border |
| title_fullStr |
The increase of crystal growing rate without damaging the smoothness of interface border |
| title_full_unstemmed |
The increase of crystal growing rate without damaging the smoothness of interface border |
| title_sort |
increase of crystal growing rate without damaging the smoothness of interface border |
| author |
Kanishchev, V.N. |
| author_facet |
Kanishchev, V.N. |
| topic |
Technology |
| topic_facet |
Technology |
| publishDate |
2013 |
| language |
English |
| container_title |
Functional Materials |
| publisher |
НТК «Інститут монокристалів» НАН України |
| format |
Article |
| description |
This paper provides literature data on non-stationary crystallization of binary melt, making it possible to put forward a hypothesis about a fluctuation mechanism of the structure transitions on the interface surface. Another argument for this hypothesis is the authors' observation results of the front crystallization at growing a sapphire crystal by horizontal directed crystallization. It has been suggested that it will be possible to grow crystals with a smooth interface border faster at a variable rate of crystallization rather than at a constant one.
|
| issn |
1027-5495 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/119910 |
| citation_txt |
The increase of crystal growing rate without damaging the smoothness of interface border / V.N. Kanishchev // Functional Materials. — 2013. — Т. 20, № 1. — С. 123-126. — Бібліогр.: 7 назв. — англ. |
| work_keys_str_mv |
AT kanishchevvn theincreaseofcrystalgrowingratewithoutdamagingthesmoothnessofinterfaceborder AT kanishchevvn increaseofcrystalgrowingratewithoutdamagingthesmoothnessofinterfaceborder |
| first_indexed |
2025-12-01T11:26:45Z |
| last_indexed |
2025-12-01T11:26:45Z |
| _version_ |
1850860095154421760 |