The increase of crystal growing rate without damaging the smoothness of interface border

• Veröffentlicht in: Functional Materials
• Datum: 2013
• 1. Verfasser: Kanishchev, V.N.
• Format: Artikel
• Sprache: English
• Veröffentlicht: НТК «Інститут монокристалів» НАН України 2013
• Schlagworte: Technology
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/119910
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: The increase of crystal growing rate without damaging the smoothness of interface border / V.N. Kanishchev // Functional Materials. — 2013. — Т. 20, № 1. — С. 123-126. — Бібліогр.: 7 назв. — англ.

This paper provides literature data on non-stationary crystallization of binary melt, making it possible to put forward a hypothesis about a fluctuation mechanism of the structure transitions on the interface surface. Another argument for this hypothesis is the authors' observation results of t...