Local atomic structures in Si₁₋xGex and Si₁₋xSnx random solid solutions
Using molecular-dynamics method based on three-particle Tersoff’s potential simulation we have studied the Si₁₋xGex and Si₁₋xSnx random solid solutions. Bond lengths and strain energies of these alloys can be predicted. The calculated results are compared with those obtained from other theoretical...
Збережено в:
| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2005 |
| Автори: | , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2005
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/119915 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Local atomic structures in Si₁₋xGex and Si₁₋xSnx random solid solutions / V.G. Deibuk,Yu.G. Korolyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 1-5. — Бібліогр.: 20 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | Using molecular-dynamics method based on three-particle Tersoff’s potential simulation we have studied the Si₁₋xGex and Si₁₋xSnx random solid solutions. Bond lengths and strain energies of these alloys can be predicted. The calculated results are compared with those obtained from other theoretical calculations and experimental measurements.
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| ISSN: | 1560-8034 |