Local atomic structures in Si₁₋xGex and Si₁₋xSnx random solid solutions

Using molecular-dynamics method based on three-particle Tersoff’s potential simulation we have studied the Si₁₋xGex and Si₁₋xSnx random solid solutions. Bond lengths and strain energies of these alloys can be predicted. The calculated results are compared with those obtained from other theoretical...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2005
Hauptverfasser: Deibuk, V.G., Korolyuk, Yu.G.
Format: Artikel
Sprache:Englisch
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2005
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/119915
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Local atomic structures in Si₁₋xGex and Si₁₋xSnx random solid solutions / V.G. Deibuk,Yu.G. Korolyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 1-5. — Бібліогр.: 20 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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author Deibuk, V.G.
Korolyuk, Yu.G.
author_facet Deibuk, V.G.
Korolyuk, Yu.G.
citation_txt Local atomic structures in Si₁₋xGex and Si₁₋xSnx random solid solutions / V.G. Deibuk,Yu.G. Korolyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 1-5. — Бібліогр.: 20 назв. — англ.
collection DSpace DC
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
description Using molecular-dynamics method based on three-particle Tersoff’s potential simulation we have studied the Si₁₋xGex and Si₁₋xSnx random solid solutions. Bond lengths and strain energies of these alloys can be predicted. The calculated results are compared with those obtained from other theoretical calculations and experimental measurements.
first_indexed 2025-12-07T15:20:44Z
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institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
issn 1560-8034
language English
last_indexed 2025-12-07T15:20:44Z
publishDate 2005
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
record_format dspace
spelling Deibuk, V.G.
Korolyuk, Yu.G.
2017-06-10T11:22:12Z
2017-06-10T11:22:12Z
2005
Local atomic structures in Si₁₋xGex and Si₁₋xSnx random solid solutions / V.G. Deibuk,Yu.G. Korolyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 1-5. — Бібліогр.: 20 назв. — англ.
1560-8034
PACS: 02.20.–a, 78.55.–m, 78.40.Fy
https://nasplib.isofts.kiev.ua/handle/123456789/119915
Using molecular-dynamics method based on three-particle Tersoff’s potential simulation we have studied the Si₁₋xGex and Si₁₋xSnx random solid solutions. Bond lengths and strain energies of these alloys can be predicted. The calculated results are compared with those obtained from other theoretical calculations and experimental measurements.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Local atomic structures in Si₁₋xGex and Si₁₋xSnx random solid solutions
Article
published earlier
spellingShingle Local atomic structures in Si₁₋xGex and Si₁₋xSnx random solid solutions
Deibuk, V.G.
Korolyuk, Yu.G.
title Local atomic structures in Si₁₋xGex and Si₁₋xSnx random solid solutions
title_full Local atomic structures in Si₁₋xGex and Si₁₋xSnx random solid solutions
title_fullStr Local atomic structures in Si₁₋xGex and Si₁₋xSnx random solid solutions
title_full_unstemmed Local atomic structures in Si₁₋xGex and Si₁₋xSnx random solid solutions
title_short Local atomic structures in Si₁₋xGex and Si₁₋xSnx random solid solutions
title_sort local atomic structures in si₁₋xgex and si₁₋xsnx random solid solutions
url https://nasplib.isofts.kiev.ua/handle/123456789/119915
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