Local atomic structures in Si₁₋xGex and Si₁₋xSnx random solid solutions

Using molecular-dynamics method based on three-particle Tersoff’s potential simulation we have studied the Si₁₋xGex and Si₁₋xSnx random solid solutions. Bond lengths and strain energies of these alloys can be predicted. The calculated results are compared with those obtained from other theoretical...

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Опубліковано в: :Semiconductor Physics Quantum Electronics & Optoelectronics
Дата:2005
Автори: Deibuk, V.G., Korolyuk, Yu.G.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2005
Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/119915
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Local atomic structures in Si₁₋xGex and Si₁₋xSnx random solid solutions / V.G. Deibuk,Yu.G. Korolyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 1-5. — Бібліогр.: 20 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-119915
record_format dspace
spelling Deibuk, V.G.
Korolyuk, Yu.G.
2017-06-10T11:22:12Z
2017-06-10T11:22:12Z
2005
Local atomic structures in Si₁₋xGex and Si₁₋xSnx random solid solutions / V.G. Deibuk,Yu.G. Korolyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 1-5. — Бібліогр.: 20 назв. — англ.
1560-8034
PACS: 02.20.–a, 78.55.–m, 78.40.Fy
https://nasplib.isofts.kiev.ua/handle/123456789/119915
Using molecular-dynamics method based on three-particle Tersoff’s potential simulation we have studied the Si₁₋xGex and Si₁₋xSnx random solid solutions. Bond lengths and strain energies of these alloys can be predicted. The calculated results are compared with those obtained from other theoretical calculations and experimental measurements.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Local atomic structures in Si₁₋xGex and Si₁₋xSnx random solid solutions
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Local atomic structures in Si₁₋xGex and Si₁₋xSnx random solid solutions
spellingShingle Local atomic structures in Si₁₋xGex and Si₁₋xSnx random solid solutions
Deibuk, V.G.
Korolyuk, Yu.G.
title_short Local atomic structures in Si₁₋xGex and Si₁₋xSnx random solid solutions
title_full Local atomic structures in Si₁₋xGex and Si₁₋xSnx random solid solutions
title_fullStr Local atomic structures in Si₁₋xGex and Si₁₋xSnx random solid solutions
title_full_unstemmed Local atomic structures in Si₁₋xGex and Si₁₋xSnx random solid solutions
title_sort local atomic structures in si₁₋xgex and si₁₋xsnx random solid solutions
author Deibuk, V.G.
Korolyuk, Yu.G.
author_facet Deibuk, V.G.
Korolyuk, Yu.G.
publishDate 2005
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description Using molecular-dynamics method based on three-particle Tersoff’s potential simulation we have studied the Si₁₋xGex and Si₁₋xSnx random solid solutions. Bond lengths and strain energies of these alloys can be predicted. The calculated results are compared with those obtained from other theoretical calculations and experimental measurements.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/119915
citation_txt Local atomic structures in Si₁₋xGex and Si₁₋xSnx random solid solutions / V.G. Deibuk,Yu.G. Korolyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 1-5. — Бібліогр.: 20 назв. — англ.
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