APA (7th ed.) Citation

Izhnin, I., Bogoboyashchyy, V., Kurbanov, K., Mynbaev, K., & Ryabikov, V. (2005). Effect of internal electrical field on compositional dependence of p-n junction depth in ion milled p-CdxHg₁₋xTe. Semiconductor Physics Quantum Electronics & Optoelectronics.

Chicago Style (17th ed.) Citation

Izhnin, I.I, V.V Bogoboyashchyy, K.R Kurbanov, K.D Mynbaev, and V.M Ryabikov. "Effect of Internal Electrical Field on Compositional Dependence of P-n Junction Depth in Ion Milled P-CdxHg₁₋xTe." Semiconductor Physics Quantum Electronics & Optoelectronics 2005.

MLA (8th ed.) Citation

Izhnin, I.I, et al. "Effect of Internal Electrical Field on Compositional Dependence of P-n Junction Depth in Ion Milled P-CdxHg₁₋xTe." Semiconductor Physics Quantum Electronics & Optoelectronics, 2005.

Warning: These citations may not always be 100% accurate.