Effect of internal electrical field on compositional dependence of p-n junction depth in ion milled p-CdxHg₁₋xTe
The dependence of the conversion depth in CdxHg₁–xTe alloys subjected to ion-beam milling (CMT) on alloy composition and treatment temperature is studied both experimentally and theoretically. It is shown that in compositionally homogeneous crystals the dependence is defined by internal electric fie...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2005 |
| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2005
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/119965 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Effect of internal electrical field on compositional dependence of p-n junction depth in ion milled p-CdxHg₁₋xTe / I.I. Izhnin, V.V. Bogoboyashchyy, K.R. Kurbanov, K.D. Mynbaev, V.M. Ryabikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 53-59. — Бібліогр.: 19 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862635268645847040 |
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| author | Izhnin, I.I. Bogoboyashchyy, V.V. Kurbanov, K.R. Mynbaev, K.D. Ryabikov, V.M. |
| author_facet | Izhnin, I.I. Bogoboyashchyy, V.V. Kurbanov, K.R. Mynbaev, K.D. Ryabikov, V.M. |
| citation_txt | Effect of internal electrical field on compositional dependence of p-n junction depth in ion milled p-CdxHg₁₋xTe / I.I. Izhnin, V.V. Bogoboyashchyy, K.R. Kurbanov, K.D. Mynbaev, V.M. Ryabikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 53-59. — Бібліогр.: 19 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The dependence of the conversion depth in CdxHg₁–xTe alloys subjected to ion-beam milling (CMT) on alloy composition and treatment temperature is studied both experimentally and theoretically. It is shown that in compositionally homogeneous crystals the dependence is defined by internal electric fields, which affect the diffusion of charged intrinsic defects that arise as a result of the treatment. The results of calculations of the effect of the potentials of the p-n junction formed by ion-milling on the conversion depth fit well both the original experimental data and those taken from the literature. The data obtained confirm the validity of the diffusion model of the formation of the excessive mercury source in CMT subjected to ion-beam milling, which was proposed by the authors earlier. The results gained allow one to precisely predict and control the conversion depth in CMT crystals and epitaxial layers subjected to ion milling for p-n junction fabrication. This makes the results presented in the paper useful in CMT infrared detector technology.
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| first_indexed | 2025-11-30T17:38:02Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-119965 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-30T17:38:02Z |
| publishDate | 2005 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Izhnin, I.I. Bogoboyashchyy, V.V. Kurbanov, K.R. Mynbaev, K.D. Ryabikov, V.M. 2017-06-10T13:47:41Z 2017-06-10T13:47:41Z 2005 Effect of internal electrical field on compositional dependence of p-n junction depth in ion milled p-CdxHg₁₋xTe / I.I. Izhnin, V.V. Bogoboyashchyy, K.R. Kurbanov, K.D. Mynbaev, V.M. Ryabikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 53-59. — Бібліогр.: 19 назв. — англ. 1560-8034 PACS: 73.61Ga, 61.72Vv, 61.80.Jh, 66.30Jt https://nasplib.isofts.kiev.ua/handle/123456789/119965 The dependence of the conversion depth in CdxHg₁–xTe alloys subjected to ion-beam milling (CMT) on alloy composition and treatment temperature is studied both experimentally and theoretically. It is shown that in compositionally homogeneous crystals the dependence is defined by internal electric fields, which affect the diffusion of charged intrinsic defects that arise as a result of the treatment. The results of calculations of the effect of the potentials of the p-n junction formed by ion-milling on the conversion depth fit well both the original experimental data and those taken from the literature. The data obtained confirm the validity of the diffusion model of the formation of the excessive mercury source in CMT subjected to ion-beam milling, which was proposed by the authors earlier. The results gained allow one to precisely predict and control the conversion depth in CMT crystals and epitaxial layers subjected to ion milling for p-n junction fabrication. This makes the results presented in the paper useful in CMT infrared detector technology. These investigations were partly supported by the
 Ministry of Education and Science of Ukraine. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Effect of internal electrical field on compositional dependence of p-n junction depth in ion milled p-CdxHg₁₋xTe Article published earlier |
| spellingShingle | Effect of internal electrical field on compositional dependence of p-n junction depth in ion milled p-CdxHg₁₋xTe Izhnin, I.I. Bogoboyashchyy, V.V. Kurbanov, K.R. Mynbaev, K.D. Ryabikov, V.M. |
| title | Effect of internal electrical field on compositional dependence of p-n junction depth in ion milled p-CdxHg₁₋xTe |
| title_full | Effect of internal electrical field on compositional dependence of p-n junction depth in ion milled p-CdxHg₁₋xTe |
| title_fullStr | Effect of internal electrical field on compositional dependence of p-n junction depth in ion milled p-CdxHg₁₋xTe |
| title_full_unstemmed | Effect of internal electrical field on compositional dependence of p-n junction depth in ion milled p-CdxHg₁₋xTe |
| title_short | Effect of internal electrical field on compositional dependence of p-n junction depth in ion milled p-CdxHg₁₋xTe |
| title_sort | effect of internal electrical field on compositional dependence of p-n junction depth in ion milled p-cdxhg₁₋xte |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/119965 |
| work_keys_str_mv | AT izhninii effectofinternalelectricalfieldoncompositionaldependenceofpnjunctiondepthinionmilledpcdxhg1xte AT bogoboyashchyyvv effectofinternalelectricalfieldoncompositionaldependenceofpnjunctiondepthinionmilledpcdxhg1xte AT kurbanovkr effectofinternalelectricalfieldoncompositionaldependenceofpnjunctiondepthinionmilledpcdxhg1xte AT mynbaevkd effectofinternalelectricalfieldoncompositionaldependenceofpnjunctiondepthinionmilledpcdxhg1xte AT ryabikovvm effectofinternalelectricalfieldoncompositionaldependenceofpnjunctiondepthinionmilledpcdxhg1xte |