Effect of internal electrical field on compositional dependence of p-n junction depth in ion milled p-CdxHg₁₋xTe

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2005
• Main Authors: Izhnin, I.I., Bogoboyashchyy, V.V., Kurbanov, K.R., Mynbaev, K.D., Ryabikov, V.M.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2005
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/119965
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Effect of internal electrical field on compositional dependence of p-n junction depth in ion milled p-CdxHg₁₋xTe / I.I. Izhnin, V.V. Bogoboyashchyy, K.R. Kurbanov, K.D. Mynbaev, V.M. Ryabikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 53-59. — Бібліогр.: 19 назв. — англ.

The dependence of the conversion depth in CdxHg₁–xTe alloys subjected to ion-beam milling (CMT) on alloy composition and treatment temperature is studied both experimentally and theoretically. It is shown that in compositionally homogeneous crystals the dependence is defined by internal electric fie...