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Effect of internal electrical field on compositional dependence of p-n junction depth in ion milled p-CdxHg₁₋xTe

The dependence of the conversion depth in CdxHg₁–xTe alloys subjected to ion-beam milling (CMT) on alloy composition and treatment temperature is studied both experimentally and theoretically. It is shown that in compositionally homogeneous crystals the dependence is defined by internal electric fie...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2005
Hauptverfasser: Izhnin, I.I., Bogoboyashchyy, V.V., Kurbanov, K.R., Mynbaev, K.D., Ryabikov, V.M.
Format: Artikel
Sprache:Englisch
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2005
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/119965
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Effect of internal electrical field on compositional dependence of p-n junction depth in ion milled p-CdxHg₁₋xTe / I.I. Izhnin, V.V. Bogoboyashchyy, K.R. Kurbanov, K.D. Mynbaev, V.M. Ryabikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 53-59. — Бібліогр.: 19 назв. — англ.

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