Morphology change of the silicon surface induced by Ar+ ion beam sputtering
Two-level modeling for nanoscale pattern formation on silicon target by Ar+ ion sputtering is presented. Phase diagram illustrating possible nanosize surface patterns is discussed. Scaling characteristics for the structure wavelength dependence versus incoming ion energy are defined. Growth and roug...
Збережено в:
| Дата: | 2011 |
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| Автори: | , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики конденсованих систем НАН України
2011
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| Назва видання: | Condensed Matter Physics |
| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/119981 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Morphology change of the silicon surface induced by Ar+ ion beam sputtering / V.O. Kharchenko, D.O. Kharchenko // Condensed Matter Physics. — 2011. — Т. 14, № 2. — С. 23602:1-11. — Бібліогр.: 27 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | Two-level modeling for nanoscale pattern formation on silicon target by Ar+ ion sputtering is presented. Phase diagram illustrating possible nanosize surface patterns is discussed. Scaling characteristics for the structure wavelength dependence versus incoming ion energy are defined. Growth and roughness exponents in different domains of the phase diagram are obtained. |
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