Morphology change of the silicon surface induced by Ar+ ion beam sputtering

Two-level modeling for nanoscale pattern formation on silicon target by Ar+ ion sputtering is presented. Phase diagram illustrating possible nanosize surface patterns is discussed. Scaling characteristics for the structure wavelength dependence versus incoming ion energy are defined. Growth and roug...

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Bibliographic Details
Date:2011
Main Authors: Kharchenko, V.O., Kharchenko, D.O.
Format: Article
Language:English
Published: Інститут фізики конденсованих систем НАН України 2011
Series:Condensed Matter Physics
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/119981
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Morphology change of the silicon surface induced by Ar+ ion beam sputtering / V.O. Kharchenko, D.O. Kharchenko // Condensed Matter Physics. — 2011. — Т. 14, № 2. — С. 23602:1-11. — Бібліогр.: 27 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine