Morphology change of the silicon surface induced by Ar+ ion beam sputtering

• Datum: 2011
• Hauptverfasser: Kharchenko, V.O., Kharchenko, D.O.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики конденсованих систем НАН України 2011
• Schriftenreihe: Condensed Matter Physics
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/119981
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Morphology change of the silicon surface induced by Ar+ ion beam sputtering / V.O. Kharchenko, D.O. Kharchenko // Condensed Matter Physics. — 2011. — Т. 14, № 2. — С. 23602:1-11. — Бібліогр.: 27 назв. — англ.

Two-level modeling for nanoscale pattern formation on silicon target by Ar+ ion sputtering is presented. Phase diagram illustrating possible nanosize surface patterns is discussed. Scaling characteristics for the structure wavelength dependence versus incoming ion energy are defined. Growth and roug...