Electric properties of the interface quantum dot — matrix

• Veröffentlicht in: Condensed Matter Physics
• Datum: 2009
• Hauptverfasser: Peleshchak, R.M., Bachynsky, I.Ya.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики конденсованих систем НАН України 2009
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/119989
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Electric properties of the interface quantum dot — matrix / R.M. Peleshchak, I.Ya. Bachynsky // Condensed Matter Physics. — 2009. — Т. 12, № 2. — С. 215-223. — Бібліогр.: 16 назв. — англ.

A theoretical research is presented concerning the potential distribution and electric field intensity in the
 InAs/GaAs nanoheterosystem with InAs QDs within the framework of self-consistent electron-deformation
 model. It is shown that at the strained border between a quantum dot a...