Influence of the surface roughness and oxide surface layer onto Si optical constants measured by the ellipsometry technique

• Опубліковано в: : Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2015
• Автори: Rozouvan, T.S., Poperenko, L.V., Shaykevich, I.A.
• Формат: Стаття
• Мова: English
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2015
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/119992
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Influence of the surface roughness and oxide surface layer onto Si optical constants measured by the ellipsometry technique / T.S. Rozouvan, L.V. Poperenko, I.A. Shaykevich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 26-30. — Бібліогр.: 15 назв. — англ.

Si crystal surface after chemical etching was studied using ellipsometry, atomic force microscopy and scanning tunneling microscopy. The ellipsometric parameters as functions of light incidence angles at two light wavelengths 546.1 and 296.7 nm were measured. The calculations based on equations for...