Au/GaAs photovoltaic structures with single-wall carbon nanotubes on the microrelief interface

• Опубліковано в: : Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2015
• Автори: Dmitruk, N.L., Borkovskaya, O.Yu., Mamykin, S.V., Havrylenko, T.S., Mamontova, I.B., Kotova, N.V., Basiuk, E.V.
• Формат: Стаття
• Мова: Англійська
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2015
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/119993
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Au/GaAs photovoltaic structures with single-wall carbon nanotubes
 on the microrelief interface / N.L. Dmitruk, O.Yu. Borkovskaya, S.V. Mamykin, T.S. Havrylenko, I.B. Mamontova, N.V. Kotova, E.V. Basiuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 31-35. — Бібліогр.: 10 назв. — англ.

The effect of single-wall carbon nanotubes nanolayer on photoelectric properties of Au/n-GaAs photovoltaic structure with a microrelief interface has been investigated. Microrelief interfaces of dendrite-like and quasi-grating type aimed at enhancement of photocurrent have been prepared by the wet chemical anisotropic etching of GaAs. Carbon nanotubes obtained using the arc-discharge method were deposited on GaAs surface modified with poly(vinylpyridine) by dip-coating repeated several times. Optical, photoelectric and electrical properties of Au/GaAs structures have been studied in dependence on the averaged thickness of nanotubes nanolayer. Considerable photocurrent enhancement has been determined for structures with both the flat and textured interface but with a different optimal thickness of nanotubes layer. The effect was concluded to be caused by increasing the lateral photocurrent component due to enlargement of the current collection area and increase of the light trapping.