Growth of graphene on 6H-SiC by molecular dynamics simulation
Classical molecular-dynamics simulations were carried out to study epitaxial growth of graphene on 6H-SiC(0001) substrate. It was found that there exists a threshold annealing temperature above which we observe formation of graphitic structure on the substrate. To check the sensitivity of the simula...
Saved in:
| Published in: | Condensed Matter Physics |
|---|---|
| Date: | 2011 |
| Main Authors: | , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики конденсованих систем НАН України
2011
|
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/120056 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Growth of graphene on 6H-SiC by molecular dynamics simulation / N. Jakse, R. Arifin, S.K. Lai // Condensed Matter Physics. — 2011. — Т. 14, № 4. — С. 43802:1-7. — Бібліогр.: 12 назв. — англ. |