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Growth of graphene on 6H-SiC by molecular dynamics simulation

Classical molecular-dynamics simulations were carried out to study epitaxial growth of graphene on 6H-SiC(0001) substrate. It was found that there exists a threshold annealing temperature above which we observe formation of graphitic structure on the substrate. To check the sensitivity of the simula...

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Bibliographic Details
Published in:	Condensed Matter Physics
Date:	2011
Main Authors:	Jakse, N., Arifin, R., Lai, S.K.
Format:	Article
Language:	English
Published:	Інститут фізики конденсованих систем НАН України 2011
Online Access:	https://nasplib.isofts.kiev.ua/handle/123456789/120056
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Journal Title:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:	Growth of graphene on 6H-SiC by molecular dynamics simulation / N. Jakse, R. Arifin, S.K. Lai // Condensed Matter Physics. — 2011. — Т. 14, № 4. — С. 43802:1-7. — Бібліогр.: 12 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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