Photovoltaic effect in p–SiC/p–Si heterojunction
The photovoltaic effect of isotype heterojunction with hole conductivity formed films of nanocrystallinep–21R–SiC, deposited on single-crystal substrate of p–Si, has been studied (heterojunction p–SiC/p–Si). The films were prepared by direct ion deposition. The features of the current-voltage and th...
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| Veröffentlicht in: | Functional Materials |
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| Datum: | 2013 |
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
НТК «Інститут монокристалів» НАН України
2013
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| Schlagworte: | |
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/120066 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Photovoltaic effect in p–SiC/p–Si heterojunction / A.A. Kozlovskyi, A.V. Semenov, V.M. Puzikov // Functional Materials. — 2013. — Т. 20, № 2. — С. 217-220. — Бібліогр.: 12 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | The photovoltaic effect of isotype heterojunction with hole conductivity formed films of nanocrystallinep–21R–SiC, deposited on single-crystal substrate of p–Si, has been studied (heterojunction p–SiC/p–Si). The films were prepared by direct ion deposition. The features of the current-voltage and the photovoltaic characteristics of the heterostructure p–SiC/p–Si were explained by the effect of the potential barriers, caused by band offsets in the contact region, on the migration of charge carriers through the heterojunction.
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| ISSN: | 1027-5495 |