Photovoltaic effect in p–SiC/p–Si heterojunction

The photovoltaic effect of isotype heterojunction with hole conductivity formed films of nanocrystallinep–21R–SiC, deposited on single-crystal substrate of p–Si, has been studied (heterojunction p–SiC/p–Si). The films were prepared by direct ion deposition. The features of the current-voltage and th...

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Опубліковано в: :Functional Materials
Дата:2013
Автори: Kozlovskyi, A.A., Semenov, A.V., Puzikov, V.M.
Формат: Стаття
Мова:English
Опубліковано: НТК «Інститут монокристалів» НАН України 2013
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Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/120066
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Photovoltaic effect in p–SiC/p–Si heterojunction / A.A. Kozlovskyi, A.V. Semenov, V.M. Puzikov // Functional Materials. — 2013. — Т. 20, № 2. — С. 217-220. — Бібліогр.: 12 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-120066
record_format dspace
spelling Kozlovskyi, A.A.
Semenov, A.V.
Puzikov, V.M.
2017-06-11T05:26:35Z
2017-06-11T05:26:35Z
2013
Photovoltaic effect in p–SiC/p–Si heterojunction / A.A. Kozlovskyi, A.V. Semenov, V.M. Puzikov // Functional Materials. — 2013. — Т. 20, № 2. — С. 217-220. — Бібліогр.: 12 назв. — англ.
1027-5495
DOI: dx.doi.org/10.15407/fm20.02.217
https://nasplib.isofts.kiev.ua/handle/123456789/120066
The photovoltaic effect of isotype heterojunction with hole conductivity formed films of nanocrystallinep–21R–SiC, deposited on single-crystal substrate of p–Si, has been studied (heterojunction p–SiC/p–Si). The films were prepared by direct ion deposition. The features of the current-voltage and the photovoltaic characteristics of the heterostructure p–SiC/p–Si were explained by the effect of the potential barriers, caused by band offsets in the contact region, on the migration of charge carriers through the heterojunction.
en
НТК «Інститут монокристалів» НАН України
Functional Materials
Characterization and properties
Photovoltaic effect in p–SiC/p–Si heterojunction
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Photovoltaic effect in p–SiC/p–Si heterojunction
spellingShingle Photovoltaic effect in p–SiC/p–Si heterojunction
Kozlovskyi, A.A.
Semenov, A.V.
Puzikov, V.M.
Characterization and properties
title_short Photovoltaic effect in p–SiC/p–Si heterojunction
title_full Photovoltaic effect in p–SiC/p–Si heterojunction
title_fullStr Photovoltaic effect in p–SiC/p–Si heterojunction
title_full_unstemmed Photovoltaic effect in p–SiC/p–Si heterojunction
title_sort photovoltaic effect in p–sic/p–si heterojunction
author Kozlovskyi, A.A.
Semenov, A.V.
Puzikov, V.M.
author_facet Kozlovskyi, A.A.
Semenov, A.V.
Puzikov, V.M.
topic Characterization and properties
topic_facet Characterization and properties
publishDate 2013
language English
container_title Functional Materials
publisher НТК «Інститут монокристалів» НАН України
format Article
description The photovoltaic effect of isotype heterojunction with hole conductivity formed films of nanocrystallinep–21R–SiC, deposited on single-crystal substrate of p–Si, has been studied (heterojunction p–SiC/p–Si). The films were prepared by direct ion deposition. The features of the current-voltage and the photovoltaic characteristics of the heterostructure p–SiC/p–Si were explained by the effect of the potential barriers, caused by band offsets in the contact region, on the migration of charge carriers through the heterojunction.
issn 1027-5495
url https://nasplib.isofts.kiev.ua/handle/123456789/120066
citation_txt Photovoltaic effect in p–SiC/p–Si heterojunction / A.A. Kozlovskyi, A.V. Semenov, V.M. Puzikov // Functional Materials. — 2013. — Т. 20, № 2. — С. 217-220. — Бібліогр.: 12 назв. — англ.
work_keys_str_mv AT kozlovskyiaa photovoltaiceffectinpsicpsiheterojunction
AT semenovav photovoltaiceffectinpsicpsiheterojunction
AT puzikovvm photovoltaiceffectinpsicpsiheterojunction
first_indexed 2025-11-28T21:56:46Z
last_indexed 2025-11-28T21:56:46Z
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