Photovoltaic effect in p–SiC/p–Si heterojunction
The photovoltaic effect of isotype heterojunction with hole conductivity formed films of nanocrystallinep–21R–SiC, deposited on single-crystal substrate of p–Si, has been studied (heterojunction p–SiC/p–Si). The films were prepared by direct ion deposition. The features of the current-voltage and th...
Gespeichert in:
| Veröffentlicht in: | Functional Materials |
|---|---|
| Datum: | 2013 |
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
НТК «Інститут монокристалів» НАН України
2013
|
| Schlagworte: | |
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/120066 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Photovoltaic effect in p–SiC/p–Si heterojunction / A.A. Kozlovskyi, A.V. Semenov, V.M. Puzikov // Functional Materials. — 2013. — Т. 20, № 2. — С. 217-220. — Бібліогр.: 12 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862610445429374976 |
|---|---|
| author | Kozlovskyi, A.A. Semenov, A.V. Puzikov, V.M. |
| author_facet | Kozlovskyi, A.A. Semenov, A.V. Puzikov, V.M. |
| citation_txt | Photovoltaic effect in p–SiC/p–Si heterojunction / A.A. Kozlovskyi, A.V. Semenov, V.M. Puzikov // Functional Materials. — 2013. — Т. 20, № 2. — С. 217-220. — Бібліогр.: 12 назв. — англ. |
| collection | DSpace DC |
| container_title | Functional Materials |
| description | The photovoltaic effect of isotype heterojunction with hole conductivity formed films of nanocrystallinep–21R–SiC, deposited on single-crystal substrate of p–Si, has been studied (heterojunction p–SiC/p–Si). The films were prepared by direct ion deposition. The features of the current-voltage and the photovoltaic characteristics of the heterostructure p–SiC/p–Si were explained by the effect of the potential barriers, caused by band offsets in the contact region, on the migration of charge carriers through the heterojunction.
|
| first_indexed | 2025-11-28T21:56:46Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-120066 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1027-5495 |
| language | English |
| last_indexed | 2025-11-28T21:56:46Z |
| publishDate | 2013 |
| publisher | НТК «Інститут монокристалів» НАН України |
| record_format | dspace |
| spelling | Kozlovskyi, A.A. Semenov, A.V. Puzikov, V.M. 2017-06-11T05:26:35Z 2017-06-11T05:26:35Z 2013 Photovoltaic effect in p–SiC/p–Si heterojunction / A.A. Kozlovskyi, A.V. Semenov, V.M. Puzikov // Functional Materials. — 2013. — Т. 20, № 2. — С. 217-220. — Бібліогр.: 12 назв. — англ. 1027-5495 DOI: dx.doi.org/10.15407/fm20.02.217 https://nasplib.isofts.kiev.ua/handle/123456789/120066 The photovoltaic effect of isotype heterojunction with hole conductivity formed films of nanocrystallinep–21R–SiC, deposited on single-crystal substrate of p–Si, has been studied (heterojunction p–SiC/p–Si). The films were prepared by direct ion deposition. The features of the current-voltage and the photovoltaic characteristics of the heterostructure p–SiC/p–Si were explained by the effect of the potential barriers, caused by band offsets in the contact region, on the migration of charge carriers through the heterojunction. en НТК «Інститут монокристалів» НАН України Functional Materials Characterization and properties Photovoltaic effect in p–SiC/p–Si heterojunction Article published earlier |
| spellingShingle | Photovoltaic effect in p–SiC/p–Si heterojunction Kozlovskyi, A.A. Semenov, A.V. Puzikov, V.M. Characterization and properties |
| title | Photovoltaic effect in p–SiC/p–Si heterojunction |
| title_full | Photovoltaic effect in p–SiC/p–Si heterojunction |
| title_fullStr | Photovoltaic effect in p–SiC/p–Si heterojunction |
| title_full_unstemmed | Photovoltaic effect in p–SiC/p–Si heterojunction |
| title_short | Photovoltaic effect in p–SiC/p–Si heterojunction |
| title_sort | photovoltaic effect in p–sic/p–si heterojunction |
| topic | Characterization and properties |
| topic_facet | Characterization and properties |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/120066 |
| work_keys_str_mv | AT kozlovskyiaa photovoltaiceffectinpsicpsiheterojunction AT semenovav photovoltaiceffectinpsicpsiheterojunction AT puzikovvm photovoltaiceffectinpsicpsiheterojunction |