Formation and thermal stability of NiSi phase in Ni (30 nm)/Pt (2 nm; 6 nm)/Siep. (50 nm)/Si (001) thin film systems

Formation and thermal stability of NiSi phase in Ni (30 nm)/Pt (2 nm; 6 nm)/Siep. (50 nm)/Si (001) thin film systems

The influence of Pt on solid state reactions in Ni (30 nm)/Pt(x) /Siep.(50 nm)/ Si (001) (x=2 nm, 6 nm) nanodimensional films has been investigated. The layers of Pt and Ni were produced by magnetron sputtering technique on the epitaxially grown 50 nm Si layer on the top of the monocryst...

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Published in:Functional Materials
Date:2013
Main Authors: Makogon, Iu.N., Pavlova, E.P., Sidorenko, S.I., Beddies, G., Beke, D.L., Csik, A., Verbitska, T.I., Fihurna, E.V., Shkarban, R.A.
Format: Article
Language:English
Published: НТК «Інститут монокристалів» НАН України 2013
Subjects:
Characterization and properties
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/120090
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Formation and thermal stability of NiSi phase in Ni (30 nm)/Pt (2 nm; 6 nm)/Siep. (50 nm)/Si (001) thin film systems / Iu.N. Makogon, E.P. Pavlova, S.I. Sidorenko, G. Beddies, D.L. Beke, A. Csik, T.I. Verbitska, E.V. Figurhaya, R.A. Shkarban // Functional Materials. — 2013. — Т. 20, № 3. — С. 332-339. — Бібліогр.: 17 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-120090
record_format dspace
spelling Makogon, Iu.N.
Pavlova, E.P.
Sidorenko, S.I.
Beddies, G.
Beke, D.L.
Csik, A.
Verbitska, T.I.
Fihurna, E.V.
Shkarban, R.A.
2017-06-11T06:12:23Z
2017-06-11T06:12:23Z
2013
Formation and thermal stability of NiSi phase in Ni (30 nm)/Pt (2 nm; 6 nm)/Siep. (50 nm)/Si (001) thin film systems / Iu.N. Makogon, E.P. Pavlova, S.I. Sidorenko, G. Beddies, D.L. Beke, A. Csik, T.I. Verbitska, E.V. Figurhaya, R.A. Shkarban // Functional Materials. — 2013. — Т. 20, № 3. — С. 332-339. — Бібліогр.: 17 назв. — англ.
1027-5495
DOI: dx.doi.org/10.15407/fm20.03.332
https://nasplib.isofts.kiev.ua/handle/123456789/120090
The influence of Pt on solid state reactions in Ni (30 nm)/Pt(x) /Siep.(50 nm)/ Si (001) (x=2 nm, 6 nm) nanodimensional films has been investigated. The layers of Pt and Ni were produced by magnetron sputtering technique on the epitaxially grown 50 nm Si layer on the top of the monocrystalline Si (001) substrate at the room temperature. Isochronal rapid thermal annealing of the samples was carried out in nitrogen atmosphere for 30 s in (450—900)° C temperature range. In the as-deposited films no phase formations were observed. During heat treatments thermally activated solid state reactions began by formation of intermediate silicide phase of Ni₂Si for x=2 nm, but the formation of this Ni reach phase was hindered for x=6 nm. Increasing the annealing temperature up to 600° C, independently from the thickness of the intermediate Pt layer, NiSi , PtSi compounds as well as Ni₁₋xPtxSi solid solution have been formed. Two-layered heterostructure has been observed for x=6 nm: complex polycrystalline Ni₁₋xPtxSi phase formed close to the surface, below which the NiSi phase was situated. Decomposition of Ni₁₋xPtxSi silicide to the NiSi (and PtSi ) phases was observed after annealing above 650° C and 850° C. Si enrichment at the surface of the Ni₁₋xPtxSi , NiSi and NiSi₂ phases is clearly observed on secondary neutral mass spectrometry depth profiles, which is interpreted as a consequence of the fast diffusion of Si along the grain boundaries.
en
НТК «Інститут монокристалів» НАН України
Functional Materials
Characterization and properties
Formation and thermal stability of NiSi phase in Ni (30 nm)/Pt (2 nm; 6 nm)/Siep. (50 nm)/Si (001) thin film systems
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Formation and thermal stability of NiSi phase in Ni (30 nm)/Pt (2 nm; 6 nm)/Siep. (50 nm)/Si (001) thin film systems
spellingShingle Formation and thermal stability of NiSi phase in Ni (30 nm)/Pt (2 nm; 6 nm)/Siep. (50 nm)/Si (001) thin film systems
Makogon, Iu.N.
Pavlova, E.P.
Sidorenko, S.I.
Beddies, G.
Beke, D.L.
Csik, A.
Verbitska, T.I.
Fihurna, E.V.
Shkarban, R.A.
Characterization and properties
title_short Formation and thermal stability of NiSi phase in Ni (30 nm)/Pt (2 nm; 6 nm)/Siep. (50 nm)/Si (001) thin film systems
title_full Formation and thermal stability of NiSi phase in Ni (30 nm)/Pt (2 nm; 6 nm)/Siep. (50 nm)/Si (001) thin film systems
title_fullStr Formation and thermal stability of NiSi phase in Ni (30 nm)/Pt (2 nm; 6 nm)/Siep. (50 nm)/Si (001) thin film systems
title_full_unstemmed Formation and thermal stability of NiSi phase in Ni (30 nm)/Pt (2 nm; 6 nm)/Siep. (50 nm)/Si (001) thin film systems
title_sort formation and thermal stability of nisi phase in ni (30 nm)/pt (2 nm; 6 nm)/siep. (50 nm)/si (001) thin film systems
author Makogon, Iu.N.
Pavlova, E.P.
Sidorenko, S.I.
Beddies, G.
Beke, D.L.
Csik, A.
Verbitska, T.I.
Fihurna, E.V.
Shkarban, R.A.
author_facet Makogon, Iu.N.
Pavlova, E.P.
Sidorenko, S.I.
Beddies, G.
Beke, D.L.
Csik, A.
Verbitska, T.I.
Fihurna, E.V.
Shkarban, R.A.
topic Characterization and properties
topic_facet Characterization and properties
publishDate 2013
language English
container_title Functional Materials
publisher НТК «Інститут монокристалів» НАН України
format Article
description The influence of Pt on solid state reactions in Ni (30 nm)/Pt(x) /Siep.(50 nm)/ Si (001) (x=2 nm, 6 nm) nanodimensional films has been investigated. The layers of Pt and Ni were produced by magnetron sputtering technique on the epitaxially grown 50 nm Si layer on the top of the monocrystalline Si (001) substrate at the room temperature. Isochronal rapid thermal annealing of the samples was carried out in nitrogen atmosphere for 30 s in (450—900)° C temperature range. In the as-deposited films no phase formations were observed. During heat treatments thermally activated solid state reactions began by formation of intermediate silicide phase of Ni₂Si for x=2 nm, but the formation of this Ni reach phase was hindered for x=6 nm. Increasing the annealing temperature up to 600° C, independently from the thickness of the intermediate Pt layer, NiSi , PtSi compounds as well as Ni₁₋xPtxSi solid solution have been formed. Two-layered heterostructure has been observed for x=6 nm: complex polycrystalline Ni₁₋xPtxSi phase formed close to the surface, below which the NiSi phase was situated. Decomposition of Ni₁₋xPtxSi silicide to the NiSi (and PtSi ) phases was observed after annealing above 650° C and 850° C. Si enrichment at the surface of the Ni₁₋xPtxSi , NiSi and NiSi₂ phases is clearly observed on secondary neutral mass spectrometry depth profiles, which is interpreted as a consequence of the fast diffusion of Si along the grain boundaries.
issn 1027-5495
url https://nasplib.isofts.kiev.ua/handle/123456789/120090
citation_txt Formation and thermal stability of NiSi phase in Ni (30 nm)/Pt (2 nm; 6 nm)/Siep. (50 nm)/Si (001) thin film systems / Iu.N. Makogon, E.P. Pavlova, S.I. Sidorenko, G. Beddies, D.L. Beke, A. Csik, T.I. Verbitska, E.V. Figurhaya, R.A. Shkarban // Functional Materials. — 2013. — Т. 20, № 3. — С. 332-339. — Бібліогр.: 17 назв. — англ.
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first_indexed 2025-12-07T16:51:06Z
last_indexed 2025-12-07T16:51:06Z
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