Formation and thermal stability of NiSi phase in Ni (30 nm)/Pt (2 nm; 6 nm)/Siep. (50 nm)/Si (001) thin film systems
The influence of Pt on solid state reactions in Ni (30 nm)/Pt(x) /Siep.(50 nm)/ Si (001) (x=2 nm, 6 nm) nanodimensional films has been investigated. The layers of Pt and Ni were produced by magnetron sputtering technique on the epitaxially grown 50 nm Si layer on the top of the monocryst...
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| Veröffentlicht in: | Functional Materials |
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| Datum: | 2013 |
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НТК «Інститут монокристалів» НАН України
2013
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/120090 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Formation and thermal stability of NiSi phase in Ni (30 nm)/Pt (2 nm; 6 nm)/Siep. (50 nm)/Si (001) thin film systems / Iu.N. Makogon, E.P. Pavlova, S.I. Sidorenko, G. Beddies, D.L. Beke, A. Csik, T.I. Verbitska, E.V. Figurhaya, R.A. Shkarban // Functional Materials. — 2013. — Т. 20, № 3. — С. 332-339. — Бібліогр.: 17 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862704351681708032 |
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| author | Makogon, Iu.N. Pavlova, E.P. Sidorenko, S.I. Beddies, G. Beke, D.L. Csik, A. Verbitska, T.I. Fihurna, E.V. Shkarban, R.A. |
| author_facet | Makogon, Iu.N. Pavlova, E.P. Sidorenko, S.I. Beddies, G. Beke, D.L. Csik, A. Verbitska, T.I. Fihurna, E.V. Shkarban, R.A. |
| citation_txt | Formation and thermal stability of NiSi phase in Ni (30 nm)/Pt (2 nm; 6 nm)/Siep. (50 nm)/Si (001) thin film systems / Iu.N. Makogon, E.P. Pavlova, S.I. Sidorenko, G. Beddies, D.L. Beke, A. Csik, T.I. Verbitska, E.V. Figurhaya, R.A. Shkarban // Functional Materials. — 2013. — Т. 20, № 3. — С. 332-339. — Бібліогр.: 17 назв. — англ. |
| collection | DSpace DC |
| container_title | Functional Materials |
| description | The influence of Pt on solid state reactions in Ni (30 nm)/Pt(x) /Siep.(50 nm)/ Si (001) (x=2 nm, 6 nm) nanodimensional films has been investigated. The layers of Pt and Ni were produced by magnetron sputtering technique on the epitaxially grown 50 nm Si layer on the top of the monocrystalline Si (001) substrate at the room temperature. Isochronal rapid thermal annealing of the samples was carried out in nitrogen atmosphere for 30 s in (450—900)° C temperature range. In the as-deposited films no phase formations were observed. During heat treatments thermally activated solid state reactions began by formation of intermediate silicide phase of Ni₂Si for x=2 nm, but the formation of this Ni reach phase was hindered for x=6 nm. Increasing the annealing temperature up to 600° C, independently from the thickness of the intermediate Pt layer, NiSi , PtSi compounds as well as Ni₁₋xPtxSi solid solution have been formed. Two-layered heterostructure has been observed for x=6 nm: complex polycrystalline Ni₁₋xPtxSi phase formed close to the surface, below which the NiSi phase was situated. Decomposition of Ni₁₋xPtxSi silicide to the NiSi (and PtSi ) phases was observed after annealing above 650° C and 850° C. Si enrichment at the surface of the Ni₁₋xPtxSi , NiSi and NiSi₂ phases is clearly observed on secondary neutral mass spectrometry depth profiles, which is interpreted as a consequence of the fast diffusion of Si along the grain boundaries.
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| first_indexed | 2025-12-07T16:51:06Z |
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| id | nasplib_isofts_kiev_ua-123456789-120090 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1027-5495 |
| language | English |
| last_indexed | 2025-12-07T16:51:06Z |
| publishDate | 2013 |
| publisher | НТК «Інститут монокристалів» НАН України |
| record_format | dspace |
| spelling | Makogon, Iu.N. Pavlova, E.P. Sidorenko, S.I. Beddies, G. Beke, D.L. Csik, A. Verbitska, T.I. Fihurna, E.V. Shkarban, R.A. 2017-06-11T06:12:23Z 2017-06-11T06:12:23Z 2013 Formation and thermal stability of NiSi phase in Ni (30 nm)/Pt (2 nm; 6 nm)/Siep. (50 nm)/Si (001) thin film systems / Iu.N. Makogon, E.P. Pavlova, S.I. Sidorenko, G. Beddies, D.L. Beke, A. Csik, T.I. Verbitska, E.V. Figurhaya, R.A. Shkarban // Functional Materials. — 2013. — Т. 20, № 3. — С. 332-339. — Бібліогр.: 17 назв. — англ. 1027-5495 DOI: dx.doi.org/10.15407/fm20.03.332 https://nasplib.isofts.kiev.ua/handle/123456789/120090 The influence of Pt on solid state reactions in Ni (30 nm)/Pt(x) /Siep.(50 nm)/ Si (001) (x=2 nm, 6 nm) nanodimensional films has been investigated. The layers of Pt and Ni were produced by magnetron sputtering technique on the epitaxially grown 50 nm Si layer on the top of the monocrystalline Si (001) substrate at the room temperature. Isochronal rapid thermal annealing of the samples was carried out in nitrogen atmosphere for 30 s in (450—900)° C temperature range. In the as-deposited films no phase formations were observed. During heat treatments thermally activated solid state reactions began by formation of intermediate silicide phase of Ni₂Si for x=2 nm, but the formation of this Ni reach phase was hindered for x=6 nm. Increasing the annealing temperature up to 600° C, independently from the thickness of the intermediate Pt layer, NiSi , PtSi compounds as well as Ni₁₋xPtxSi solid solution have been formed. Two-layered heterostructure has been observed for x=6 nm: complex polycrystalline Ni₁₋xPtxSi phase formed close to the surface, below which the NiSi phase was situated. Decomposition of Ni₁₋xPtxSi silicide to the NiSi (and PtSi ) phases was observed after annealing above 650° C and 850° C. Si enrichment at the surface of the Ni₁₋xPtxSi , NiSi and NiSi₂ phases is clearly observed on secondary neutral mass spectrometry depth profiles, which is interpreted as a consequence of the fast diffusion of Si along the grain boundaries. en НТК «Інститут монокристалів» НАН України Functional Materials Characterization and properties Formation and thermal stability of NiSi phase in Ni (30 nm)/Pt (2 nm; 6 nm)/Siep. (50 nm)/Si (001) thin film systems Article published earlier |
| spellingShingle | Formation and thermal stability of NiSi phase in Ni (30 nm)/Pt (2 nm; 6 nm)/Siep. (50 nm)/Si (001) thin film systems Makogon, Iu.N. Pavlova, E.P. Sidorenko, S.I. Beddies, G. Beke, D.L. Csik, A. Verbitska, T.I. Fihurna, E.V. Shkarban, R.A. Characterization and properties |
| title | Formation and thermal stability of NiSi phase in Ni (30 nm)/Pt (2 nm; 6 nm)/Siep. (50 nm)/Si (001) thin film systems |
| title_full | Formation and thermal stability of NiSi phase in Ni (30 nm)/Pt (2 nm; 6 nm)/Siep. (50 nm)/Si (001) thin film systems |
| title_fullStr | Formation and thermal stability of NiSi phase in Ni (30 nm)/Pt (2 nm; 6 nm)/Siep. (50 nm)/Si (001) thin film systems |
| title_full_unstemmed | Formation and thermal stability of NiSi phase in Ni (30 nm)/Pt (2 nm; 6 nm)/Siep. (50 nm)/Si (001) thin film systems |
| title_short | Formation and thermal stability of NiSi phase in Ni (30 nm)/Pt (2 nm; 6 nm)/Siep. (50 nm)/Si (001) thin film systems |
| title_sort | formation and thermal stability of nisi phase in ni (30 nm)/pt (2 nm; 6 nm)/siep. (50 nm)/si (001) thin film systems |
| topic | Characterization and properties |
| topic_facet | Characterization and properties |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/120090 |
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