Correlated band structure of electron-doped cuprate materials

• Опубліковано в: : Физика низких температур
• Дата: 2006
• Автори: Dahnken, C., Potthoff, M., Arrigoni, E., Hanke, W.
• Формат: Стаття
• Мова: English
• Опубліковано: Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України 2006
• Теми: Strong Correlations
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/120195
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Correlated band structure of electron-doped cuprate materials / C. Dahnken, M. Potthoff, E. Arrigoni, W. Hanke // Физика низких температур. — 2006. — Т. 32, № 4-5. — С. 602– 608. — Бібліогр.: 33 назв. — англ.

We present a numerical study of the doping dependence of the spectral function of the n-type cuprates. Using a variational cluster-perturbation theory approach based upon the self-energyfunctional theory, the spectral function of the electron-doped two-dimensional Hubbard model is calculated. The model includes the next-nearest neighbor electronic hopping amplitude t' and a fixed on-site interaction U - 8t at half-filling and doping levels ranging from x - 0.077 to x - 0.20 . Our results support the fact that a comprehensive description of the single-particle spectrum of electron-doped cuprates requires a proper treatment of strong electronic correlations. In contrast to previous weak-coupling approaches, we obtain a consistent description of the ARPES experiments without the need to (artificially) introduce a doping-dependent on-site interaction U.