Correlated band structure of electron-doped cuprate materials

We present a numerical study of the doping dependence of the spectral function of the n-type cuprates. Using a variational cluster-perturbation theory approach based upon the self-energyfunctional theory, the spectral function of the electron-doped two-dimensional Hubbard model is calculated. The...

Повний опис

Збережено в:
Бібліографічні деталі
Опубліковано в: :Физика низких температур
Дата:2006
Автори: Dahnken, C., Potthoff, M., Arrigoni, E., Hanke, W.
Формат: Стаття
Мова:English
Опубліковано: Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України 2006
Теми:
Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/120195
Теги: Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Correlated band structure of electron-doped cuprate materials / C. Dahnken, M. Potthoff, E. Arrigoni, W. Hanke // Физика низких температур. — 2006. — Т. 32, № 4-5. — С. 602– 608. — Бібліогр.: 33 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-120195
record_format dspace
spelling Dahnken, C.
Potthoff, M.
Arrigoni, E.
Hanke, W.
2017-06-11T12:14:54Z
2017-06-11T12:14:54Z
2006
Correlated band structure of electron-doped cuprate materials / C. Dahnken, M. Potthoff, E. Arrigoni, W. Hanke // Физика низких температур. — 2006. — Т. 32, № 4-5. — С. 602– 608. — Бібліогр.: 33 назв. — англ.
0132-6414
PACS: 74.25.Jb, 74.72.—h
https://nasplib.isofts.kiev.ua/handle/123456789/120195
We present a numerical study of the doping dependence of the spectral function of the n-type cuprates. Using a variational cluster-perturbation theory approach based upon the self-energyfunctional theory, the spectral function of the electron-doped two-dimensional Hubbard model is calculated. The model includes the next-nearest neighbor electronic hopping amplitude t' and a fixed on-site interaction U - 8t at half-filling and doping levels ranging from x - 0.077 to x - 0.20 . Our results support the fact that a comprehensive description of the single-particle spectrum of electron-doped cuprates requires a proper treatment of strong electronic correlations. In contrast to previous weak-coupling approaches, we obtain a consistent description of the ARPES experiments without the need to (artificially) introduce a doping-dependent on-site interaction U.
The authors would like to acknowledge support by the DFG-Forschergruppe: Doping-dependence of phase transitions and ordering phenomena in cuprate superconductors (FOR 538), and by the Bavarian KONWHIR project CUHE. This research was supported in part by the National Science Foundation under Grant No. PHY99-0794. One of us (WH) would like to acknowledge the warm hospitality of the Kavli Institute for Theoretical Physics in Santa Barbara, where part of this work was concluded.
en
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
Физика низких температур
Strong Correlations
Correlated band structure of electron-doped cuprate materials
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Correlated band structure of electron-doped cuprate materials
spellingShingle Correlated band structure of electron-doped cuprate materials
Dahnken, C.
Potthoff, M.
Arrigoni, E.
Hanke, W.
Strong Correlations
title_short Correlated band structure of electron-doped cuprate materials
title_full Correlated band structure of electron-doped cuprate materials
title_fullStr Correlated band structure of electron-doped cuprate materials
title_full_unstemmed Correlated band structure of electron-doped cuprate materials
title_sort correlated band structure of electron-doped cuprate materials
author Dahnken, C.
Potthoff, M.
Arrigoni, E.
Hanke, W.
author_facet Dahnken, C.
Potthoff, M.
Arrigoni, E.
Hanke, W.
topic Strong Correlations
topic_facet Strong Correlations
publishDate 2006
language English
container_title Физика низких температур
publisher Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
format Article
description We present a numerical study of the doping dependence of the spectral function of the n-type cuprates. Using a variational cluster-perturbation theory approach based upon the self-energyfunctional theory, the spectral function of the electron-doped two-dimensional Hubbard model is calculated. The model includes the next-nearest neighbor electronic hopping amplitude t' and a fixed on-site interaction U - 8t at half-filling and doping levels ranging from x - 0.077 to x - 0.20 . Our results support the fact that a comprehensive description of the single-particle spectrum of electron-doped cuprates requires a proper treatment of strong electronic correlations. In contrast to previous weak-coupling approaches, we obtain a consistent description of the ARPES experiments without the need to (artificially) introduce a doping-dependent on-site interaction U.
issn 0132-6414
url https://nasplib.isofts.kiev.ua/handle/123456789/120195
citation_txt Correlated band structure of electron-doped cuprate materials / C. Dahnken, M. Potthoff, E. Arrigoni, W. Hanke // Физика низких температур. — 2006. — Т. 32, № 4-5. — С. 602– 608. — Бібліогр.: 33 назв. — англ.
work_keys_str_mv AT dahnkenc correlatedbandstructureofelectrondopedcupratematerials
AT potthoffm correlatedbandstructureofelectrondopedcupratematerials
AT arrigonie correlatedbandstructureofelectrondopedcupratematerials
AT hankew correlatedbandstructureofelectrondopedcupratematerials
first_indexed 2025-12-07T18:35:31Z
last_indexed 2025-12-07T18:35:31Z
_version_ 1850875609165594625