Correlated band structure of electron-doped cuprate materials
We present a numerical study of the doping dependence of the spectral function of the n-type
 cuprates. Using a variational cluster-perturbation theory approach based upon the self-energyfunctional
 theory, the spectral function of the electron-doped two-dimensional Hubbard model is&...
Saved in:
| Published in: | Физика низких температур |
|---|---|
| Date: | 2006 |
| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
| Published: |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2006
|
| Subjects: | |
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/120195 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Correlated band structure of electron-doped cuprate
 materials / C. Dahnken, M. Potthoff, E. Arrigoni, W. Hanke // Физика низких температур. — 2006. — Т. 32, № 4-5. — С. 602– 608. — Бібліогр.: 33 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1860244957023961088 |
|---|---|
| author | Dahnken, C. Potthoff, M. Arrigoni, E. Hanke, W. |
| author_facet | Dahnken, C. Potthoff, M. Arrigoni, E. Hanke, W. |
| citation_txt | Correlated band structure of electron-doped cuprate
 materials / C. Dahnken, M. Potthoff, E. Arrigoni, W. Hanke // Физика низких температур. — 2006. — Т. 32, № 4-5. — С. 602– 608. — Бібліогр.: 33 назв. — англ. |
| collection | DSpace DC |
| container_title | Физика низких температур |
| description | We present a numerical study of the doping dependence of the spectral function of the n-type
cuprates. Using a variational cluster-perturbation theory approach based upon the self-energyfunctional
theory, the spectral function of the electron-doped two-dimensional Hubbard model is
calculated. The model includes the next-nearest neighbor electronic hopping amplitude t' and a
fixed on-site interaction U - 8t at half-filling and doping levels ranging from x - 0.077 to x - 0.20 .
Our results support the fact that a comprehensive description of the single-particle spectrum of
electron-doped cuprates requires a proper treatment of strong electronic correlations. In contrast
to previous weak-coupling approaches, we obtain a consistent description of the ARPES
experiments without the need to (artificially) introduce a doping-dependent on-site interaction U.
|
| first_indexed | 2025-12-07T18:35:31Z |
| format | Article |
| fulltext |
Fizika Nizkikh Temperatur, 2006, v. 32, Nos. 4/5, p. 602– 608
Correlated band structure of electron-doped cuprate
materials
C. Dahnken1, M. Potthoff1, E. Arrigoni2, and W. Hanke1,3
1Institute for Theoretical Physics and Astrophysics,
University of W�rzburg, am Hubland, W�rzburg 97074, Germany
E-mail: arriqoni@itp.tu-graz.ac.at
2Institute for Theoretical Physics and Computational Physics,
Graz University of Technology, Graz, A-8010, Austria
3Kavli Institute for Theoretical Physics, University of California, Santa Barbara, California
93106-4030, USA
E-mail: hanke@physik.uni-wuerzburg.de
Received August 25, 2005
We present a numerical study of the doping dependence of the spectral function of the n-type
cuprates. Using a variational cluster-perturbation theory approach based upon the self-energy-
functional theory, the spectral function of the electron-doped two-dimensional Hubbard model is
calculated. The model includes the next-nearest neighbor electronic hopping amplitude t� and a
fixed on-site interaction U t� 8 at half-filling and doping levels ranging from x � 0077. to x � 020. .
Our results support the fact that a comprehensive description of the single-particle spectrum of
electron-doped cuprates requires a proper treatment of strong electronic correlations. In contrast
to previous weak-coupling approaches, we obtain a consistent description of the ARPES
experiments without the need to (artificially) introduce a doping-dependent on-site interactionU.
PACS: 74.25.Jb, 74.72.—h
Keywords: High-Tc superconductivity, cuprate materials, electron correlations.
Introduction
Angular resolved photoemission spectroscopy
(ARPES) has greatly contributed to our current un-
derstanding of materials with strong electron corre-
lations, in particular high-temperature supercon-
ductors (HTSC). Up to a few years ago, ARPES
investigations have been concentrated on hole-doped
HTSC materials. Since ARPES probes the part of the
spectral function that is occupied by electrons, only
the region below the insulating gap can be investi-
gated in hole-doped cuprates. Although the observa-
tion of the unoccupied parts of the spectral function is
in principle possible via inverse photoemission, the
process is highly involved and does not yield the same
resolution as direct photoemission. An opportunity for
a more comprehensive study of the doping dependence
of the spectral function is offered by electron-doped
cuprates. In these materials, not only the excitations
below the Fermi level in the lower Hubbard band, but
also those below the Fermi level in the upper Hubbard
band can be studied and thus a large part of the
important low-energy excitations is covered. For this
reason, the investigation of such n-type cuprates by
ARPES provides a large amount of new information
on the quasiparticle dynamics of HTSC cuprates.
Recently, an ARPES study of the doping dependence
of the electron-doped cuprate Nd2�xCexCuOCl4� �
(NCCO) has been carried out by the Stanford
group [1,2]. In these measurements, the low-energy
excitations of Nd2CuOCl 4� � (NCO) were shown to
essentially coincide with the ones of typical undoped
parent compounds of hole-doped materials such as
Sr2CuO2Cl2 and Ca2CuO2Cl2, thus demonstrating
the universality of the electronic structure of the
(single layer) undoped cuprates. Upon electron do-
ping, a remarkable Fermi surface (FS) evolution was
found: In the heavily underdoped region the low-
energy spectral weight is limited to an area close
© C. Dahnken, M. Potthoff, E. Arrigoni, and W. Hanke, 2006
around k � ( , )� 0 . This has been interpreted as the
formation of electron pockets. With increasing doping
level, these pockets are connected by FS patches and
finally form a large local density approximation
(LDA)-like FS closed around k � ( , )� � .
The spectral function and FS data presented in [2]
gave rise to several theoretical interpretations, which
also include the idea of a collapse of the Mott gap due
to strong suppression of the local Coulomb repulsion
upon doping [3]. This conclusion was based upon
mean-field calculations which employ a fitting of the
on-site repulsion Ueff of the Hubbard model as a
function of doping, to the value of the antiferromag-
netic order parameter obtained from experiments at
each doping level.
In the present paper, using both standard cluster-
perturbation theory (CPT) [4–6] and, in particular,
also a variationally improved version (V-CPT)
[7–10], which is based on the self-energy functional
theory [11], we calculate the spectral function of the
two-dimensional one-band Hubbard model. This mo-
del is taken with next-nearest neighbor hopping
amplitude t t� � �0 35. and fixed on-site interaction
U t� 8 at half filling and doping levels ranging from
x � 0 077. to x � 0 20. . Our numerical results show that
the salient features of the recent ARPES experiments
for electron-doped cuprates can be reproduced with
one-and-the-same Hubbard model without the neces-
sity to resort to any change of the U-values as a
function of doping as used in previous theoretical
studies. Our challenge here is to reproduce the global
(i.e. n- and p-doped) phase diagram by one universal
choice of the model parameters, starting from a pic-
ture of a doped Mott–Hubbard insulator.
Model
As a generic model for the HTSC compounds we
use the one-band Hubbard model [12] H b1 , i.e.
H t c c U n nb
i j
i j i
i
i1 � � � �
� �
� �� �( )
,
†
� � h.c. . (1)
Here, ci�
† (ci�) creates (annihilates) an electron on
site i with spin �, � �� denotes nearest neighbors and
U is the on-site part of the Coulomb repulsion. Al-
though the t U� Hubbard model at low temperature
develops a quasiparticle band of the appropriate
width [13,14], the dispersion shows a near degene-
racy between the k � ( , )� 0 and the k � ( , )� �/ /2 2
points. From ARPES experiments, however, we know
that the quasiparticle peak at k � ( , )� 0 is shifted to
higher binding energies. Actually, the dispersion of
the quasiparticle peak shows two parabola with low-
est binding energy at k � ( , )� /2 0 and k � ( , )� � /2 .
It is, thus, indispensable to add at least one addi-
tional term [15,16], which is taken here to be the
hopping between next-nearest neighbors (�� ��� ), i.e.
� � �
�� ��
�t c c
i j
i j( )
,
†
� � h.c . (2)
Even longer-range hopping (t ) elements have been
proposed to achieve consistency with experiment
[17]. However, for the purpose of a qualitative
analysis, it is sufficient to lift the degeneracy between
k � ( , )� 0 and k � ( , )� �/ /2 2 and, thus, create the
indirect gap as observed in experiments.
Numerical technique
Despite the considerable simplification arising
from the use of an effective single-band model, the
calculation of the spectral function of the Hubbard
model still remains a difficult task. The calculation of
this quantity by exact diagonalization is only possible
for a small lattice of up to 4 4
sites, provided
periodic boundary conditions are used. Larger lattice
sizes can only be calculated by stochastic methods,
such as the quantum Monte Carlo (QMC) technique
[18] or the density matrix renormalization group
algorithm (DMRG) [19]. While these techniques
certainly represent powerful approaches to strongly-
correlated electron systems, they are known to show
disadvantages when applied to the present problem.
In case of QMC, doping and low temperatures lead to
the well-known sign problem, i.e. the computation
time increases exponentially with T and system size
[14,20]. DMRG, in contrast, is a ground state tech-
nique successfully applied for 1D and ladder systems,
but displays convergence problems when applied to
two-dimensional systems.
Recently, a strong-coupling perturbation theory
has been developed for which the infinite lattice is
subdivided into sufficiently small clusters that can be
treated exactly, followed by an infinite-lattice ex-
pansion in powers of the hopping between the clusters
[4–6]. The expansion in the intercluster hopping can
be formally carried out up to arbitrary order following
the diagrammatic method of Refs. 21–23. The lowest
order of this strong-coupling expansion in the inter-
cluster hopping has been termed «cluster perturbation
theory» (CPT).
The CPT Green’s function is given by
G G G TG G TG TG G T
�
� � � � �0 0 0 0 0 0 0
1 1
� [ ]– ,
(3)
where G is the Green’s function of the infinite
system, G0 the cluster Green’s function and T the
inter-cluster hopping. All quantities are matrices with
Correlated band structure of electron-doped cuprate materials
Fizika Nizkikh Temperatur, 2006, v. 32, Nos. 4/5 603
indices referring to the particular cluster and to the
sites within that cluster. CPT can be considered as a
systematic approach with respect to the cluster size,
i.e. it becomes exact in the limit Nc � �, where Nc
is the number of sites within a cluster. In addition,
CPT provides approximate results for an infinitely
large system: One of the advantages of this method is
that the CPT Green’s function is defined for any
wave vector k in the Brillouin zone, contrary to
common «direct» cluster methods, like QMC or exact
diagonalization (ED), for which only a few momenta
are available.
CPT results for static quantities as well as for the
single-particle spectral function have been shown to
agree very well with different exact analytical and
numerical results [5,6]. On the other hand, there is
also a serious disadvantage of CPT at this level:
Namely, the method does not contain any self-con-
sistent procedure which implies that symmetry-broken
phases cannot be studied. We have recently proposed
a variational approach (V-CPT) to this problem,
which is based on the self-energy-functional approach
(SFA). This method is explained in detail elsewhere
[7,8,11]. We use V-CPT to calculate the Green’s
function of the half-filled Hubbard model with long-
range antiferromagnetic order while plain CPT is used
for the doped system. The extension to a doped system
with d-wave superconductivity was presented in
Refs. 10.
Results and discussion
We consider the above single-band Hubbard model
with nearest- t and next-nearest-neighbor t� hopping at
zero temperature. Useful parameterizations of the
t t U� �� Hubbard model can be taken from the lite-
rature [16,24]. We choose t t� � �0 35. andU t� 8 here,
which yields a sufficiently accurate ratio for the Mott
gap
� 4t and for the width of the quasiparticle band
W t� 1 , and fits the experimental dispersion of the
quasiparticle band. For a reasonable approximation to
the full many-body problem, CPT and V-CPT cal-
culations for relatively large clusters are required. In
this work, we have calculated the spectral function for
half filling and for doped systems with x � 0 07. to 0 2. .
To achieve the smallest doping level, clusters con-
sisting of 13 sites have been used.
Figure 1 displays the spectral function A( , )k � of
the half-filled (x � 0 0. , panel A) and overdoped
t t U� �� Hubbard model (x � 0 2. , panel B). The plots
show A( , )k � along the momenta � � � �( , )0 0 X
� � � � �( , ) ( , ) ( , )� � �0 0 0M � through the Bril-
604 Fizika Nizkikh Temperatur, 2006, v. 32, Nos. 4/5
C. Dahnken, M. Potthoff, E. Arrigoni, and W. Hanke
6 6
4 4
2 2
0
0
–0.1
–0.2
–0.3
–0.4
0
–2 –2
–4 –4
–6 –6
–8 –8
��
�
�
�
�
E,
eV
��
�
�
�
�t t
Fig. 1. Spectral function of the t t U� � � Hubbard model with t t� � �035. and U t� 8 . Panel A: half-filling. Panel B: over-
doped system with x � 02. . Panel C: Detailed dispersion of the quasiparticle band of panel A for t � 05. eV. Symbols repre-
sent the experimentally determined dispersion for Sr2CuO2Cl2 (squares [25], circles [26], diamonds [27]). Both spectra
where obtained by a CPT calculation using a 10-site cluster.
louin zone. The half-filled system in panel A gives rise
to a narrow quasiparticle band, roughly between
� � �3t and � � �2t. A more detailed plot is given in
panel C. One notices the characteristic parabolic
dispersion close to k � ( , )� /2 0 , k � ( , )� � /2 and
k � ( , )� �/ /2 2 . Assuming t � 0 5. eV, this dispersion
is practically identical to the ARPES data
[2,25,26,28]. The indirect single particle gap between
k � ( , )� 0 and k � ( , )� �/ /2 2 is about 4t, which is the
maximum value still compatible with experiments.
At about � � �3t a feature with maximal spectral
weight close to k � ( , )0 0 can be observed. The same
spectral feature was already observed in early QMC
simulations of the single-band t U� Hubbard mo-
del [29], exact diagonalizations of the t – J model
[30] and approximate perturbative methods such as
the self-consistent Born approximation (SCBA). Its
spectral weight was mostly perceived as coherent, i.e.
corresponding to the «coherent» motion of a «spin-
bag» like quasiparticle. This is also supported by more
recent QMC simulations [13], V-CPT calculations [8]
of the t U� Hubbard model, and analytical consi-
derations [31].
We now discuss the spectral function for the over-
doped (x � 0 2. ) system, which is plotted in panel B.
Here, one finds a metallic quasiparticle band with a
flat dispersion just below the Fermi level at k � ( , )� 0 .
The band crosses the Fermi level close to
k � ( , )� �/ /2 2 and k � ( , )� � /2 and therefore creates
a large Fermi surface closed around k � ( , )� � in the
Brillouin zone. The quasiparticle band shows almost
the same dispersion as the tight-binding (U � 0) model
with the same parameterization. Deep below the
Fermi level, between � � �6t and � � �10t, we can see
the traces of the lower Hubbard band observed at half
filling, i.e. the area between � � �4t and � � �6t in
panel A.
In Fig. 2 we plot a detail of the spectral function of
the Hubbard model in a more restricted region around
the Fermi level for three doping values, namely
x � 0 077. (panel A), x � 0 091. (panel B), and x � 0 200.
(panel C). For x � 0 077. , the Fermi level enters into
the upper Hubbard band with only slight modi-
fications of the spectral weight. Most important, the
arc around k � ( , )� 0 in the upper Hubbard band of
the half-filled system is virtually unchanged and now
forms an electron pocket around k � ( , )� 0 , as can be
seen in panel A. However, for this underdoped system,
the Fermi level has not yet reached the bottom of the
parabolic band around k � ( , )� �/ /2 2 . The effect of
doping is not limited to a rigid shift of the band
structure with respect to the half-filled situation. As a
matter of fact, some new spectral weight is created
between � � �1t and � � �0 5. t at k � ( , )0 0 and bet-
ween� � �0 5. t and� � 0t at k � ( , )� �/ /2 2 . At higher
doping, for x � 0 091. (panel B), this new spectral
weight becomes more pronounced and starts
producing the branches at k � �( , ) ( , )0 0 0� and
k � �( , ) ( , )0 0 2 2� �/ / below the Fermi level, which
are clearly observed in the overdoped system in pa-
nel C.
The results described above provide a deeper in-
sight into the doping process of the t t U� �� Hubbard
model, provided one assumes that the parameters of
the model do not change as a function of doping.
Correlated band structure of electron-doped cuprate materials
Fizika Nizkikh Temperatur, 2006, v. 32, Nos. 4/5 605
–2
–2
–2
–1.5
–1.5
–1.5
–1.0
–1.0
–1.0
– 0.5
– 0.5
– 0.5
0
0
0
0.5
0.5
0.5
1.0
1.0
1.0
�� � ���
�� � ���
�� � ���
t
t
t
�� ��
�� ��
�� ��
� ��
� ��
� ��
�
�
�
�
�
�
�� ��
�� ��
�� ��
A
B
C
Fig. 2. Details of the spectral function of the t t U� ��
Hubbard model with t t� � �035. and U t� 8 restricted to a
narrower region around the Fermi level. Panel A: x = 0.077,
obtained from a 13 site cluster. Panel B: x = 0.091, ob-
tained from a 11 site cluster. Panel C: x = 0.200, obtained
from a 10 site cluster.
Although this assumption is widely believed to be
appropriate for the doping range considered here,
there have been suggestions that the on-site repulsion
U is constant over a broader doping range. The
possibility of a doping-dependent on-site repulsion
was considered recently on the basis of a spin-density
wave (SDW) mean field calculation of the t t t U� �� �
Hubbard model to describe the experimental data of
the electron-doped system NCCO [2,3]. In contrast to
the usual SDW calculation, where one self-consis-
tently determines the single particle gap
mf under
the assumption that U is a fixed parameter, the
authors of Ref. 3 consider U as a doping-dependent
parameter fixed by the condition that at each doping
value
mf corresponds to the experimentally-deter-
mined pseudogap. In their calculation, which we
herewith refer to as KMLB, the value of Ueff drops
sharply upon doping from U teff � 6 at half filling to
U teff � 3 at x � 015. . The success of this idea is sup-
ported by the fact that the spectral function obtained
from this procedure shows excellent agreement with
the doping evolution of the experimentally observed
Fermi surface. The whole scenario, however, is based
upon the assumption that a varying Ueff is indis-
pensable for the reproduction of the experimental
results.
For this reason, it is important to verify, whether a
doping-dependentU is necessary in order to correctly
reproduce the spectral features as a function of dop-
ing, in particular the doping dependence of the Fermi
surface. This is conveniently represented experimen-
tally by plotting an intensity plot of the spectral
weight at the Fermi energy � � 0. The upper row of
Fig. 3 (panels A through C) shows the ARPES data
taken from [2], whereas the lower row (panels D
through F) plots the results obtained by in the CPT
calculation [32].
Although we only used a minimal set of standard
parameters and did not change the parameterization
(in particular U) as a function of doping, the CPT
Fermi surface of the fully correlated Hubbard model
qualitatively reproduces the experimental result. In
particular, we observe electron pockets around
k � ( , )� 0 in the underdoped region, a FS patch at
k � ( , )� �/ /2 2 for about x � 010. and a large FS
centered around k � ( , )� � in the overdoped case. All
these features are consistent with the experimental
results found in [2] as well as in the Hartree—Fock
calculation of Ref. 3. As a matter of fact, Fig. 2 shows
that the closing of the gap at higher doping, which is
obtained «by hand» upon decreasing U within the
KMLB, comes about naturally within our numerical
treatment of the Hubbard model, in which electron
correlations are treated more accurately.
Figure 4 directly compares the CPT and KMLB
quasiparticle dispersion at half filling and x � 010.
(CPT: x � 0 091. ). Notice that for the KMLB results
only the dispersion is indicated (solid line). In order
to have comparable energy scales, we reported the
energies from [3] in unit of t � 1.
At half filling (Panel A) both methods show almost
identical dispersions for the lowest-energy excitations,
since both methods have been fitted to the expe-
rimental results. However, as a SDW-type mean field
606 Fizika Nizkikh Temperatur, 2006, v. 32, Nos. 4/5
C. Dahnken, M. Potthoff, E. Arrigoni, and W. Hanke
A
D
B
E
C
F
Fig. 3 Spectral weight at the Fermi energy, whose maximum is an indication of the Fermi-surface contour for different
doping levels. The plots A through C are obtained from ARPES experiments (taken from [2]), while D through F
correspond to our CPT results, whose spectral functions are plotted in Fig. 2.
method, the KMLB results cannot describe the full
lower Hubbard band and is exclusively fitted to the
low-energy excitations. Hence, the lower part of the
spectrum between � � �3t to � � �4t cannot be re-
produced within this technique.
Both techniques describe the closing of the gap as
a function of doping. Although the CPT dispersion
is much weaker and shows a much smaller gap at
k � ( , )� �/ /2 2 , the qualitative development as a
function of doping is very similar. As discussed above,
there is additional information provided by CPT in
contrast to KMLB, concerning the high-binding ener-
gy part of the spectrum. In particular, a remainder of
the parabolic dispersion at k � ( , )� �/ /2 2 is found at
� � �5t. This feature does not appear in the mean field
calculation, but can be clearly identified in the ex-
perimental data [2].
Conclusion
In conclusion, we have shown that the evolution of
the Fermi surface of the electron-doped cuprates is
well described within the framework of the one-band
Hubbard model with nearest- and next-nearest-neigh-
bor hoppings. In particular, we have provided indi-
cations that a doping-dependent Hubbard repulsionU
is not necessary in order to describe the doping
dependence of the ARPES spectrum.
The authors would like to acknowledge support
by the DFG-Forschergruppe: Doping-dependence of
phase transitions and ordering phenomena in cuprate
superconductors (FOR 538), and by the Bavarian
KONWHIR project CUHE. This research was sup-
ported in part by the National Science Foundation
under Grant No. PHY99-0794. One of us (WH)
would like to acknowledge the warm hospitality of the
Kavli Institute for Theoretical Physics in Santa Bar-
bara, where part of this work was concluded.
1. N.P. Armitage, D.H. Lu, C. Kim, A. Damascelli,
K.M. Shen, F. Ronning, D.L. Feng, P. Bogdanov,
Z.X. Shen, Y. Onose, Y. Taguchi, Y. Tokura, P.K.
Mang, N. Kaneko, and M. Greven, Phys. Rev. Lett.
87, 147003 (2001).
2. N.P. Armitage, F. Ronning, D.H. Lu, C. Kim, A. Da-
mascelli, K.M. Shen, D.L. Feng, H. Eisaki, Z.-X.
Shen, P.K. Mang, N. Kaneko, M. Greven, Y. Onose,
Y. Taguchi, and Y. Tokura, Phys. Rev. Lett. 88,
257001 (2002).
3. C. Kusko, R.S. Markiewicz, M. Lindroos, and A. Ban-
sil, Phys. Rev. B66, 140513(R) (2002).
4. C. Gros and R. Valenti, Phys. Rev. B48, 418 (1993).
5. D. S�n�chal, D. Perez, and D. Plouffe, Phys. Rev.
B66, 075129 (2002).
6. D. S�n�chal, D. Perez, and M. Pioro-Ladriere, Phys.
Rev. Lett. 84, 522 (2000).
7. M. Potthoff, M. Aichhorn, and C. Dahnken, Phys.
Rev. Lett. 91, 206402 (2003).
8. C. Dahnken, M. Aichhorn, W. Hanke, E. Arrigoni,
and M. Potthoff, Phys. Rev. B70, 245110 (2004).
9. D. S�n�chal, P.L. Lavertu, M.A. Marois, and A.M.S.
Tremblay, Phys. Rev. Lett. 94, 156404 (2005).
10. M. Aichhorn and E. Arrigoni, cond-mat/0502047 (un-
published).
Correlated band structure of electron-doped cuprate materials
Fizika Nizkikh Temperatur, 2006, v. 32, Nos. 4/5 607
–5 0 5
�� � ��� t
�� ��
�
��
�
�
�� ��
–5 0 5
�� � ��� t
�� ��
�
��
�
�
�� ��
A B
Fig. 4. Direct comparison between CPT and KMLB results (see text). The KMLB dispersion is indicated by the solid
line. In both cases, energies are given in units of t � 1. A: half-filling; B: x � 010. (CPT x � 0091. ).
11. M. Potthoff, Eur. Phys. J. B32, 429 (2003).
12. J. Hubbard, Proc. R. Soc. London 276, 238 (1963).
13. C.G�ber, R. Eder, and W. Hanke, Phys. Rev. B62,
4336 (2000).
14. C. Gr�ber, Ph. D. Thesis, Universit�t W�rzburg (1999).
15. T. Tohyama and S. Maekawa, Supercond. Sci. Tech-
nol. 13, R17 (2000).
16. D. Duffy, A. Nazarenko, S. Haas, A. Moreo, J. Riera,
and E. Dagotto, cond-mat/9701083 (unpublished).
17. D. Senechal and A.-M. Tremblay, Phys. Rev. Lett.
92, 126401 (2004).
18. J.E. Hirsch, Phys. Rev. B38, 12023 (1988).
19. R.M. Noack, S.R. White, and D.J. Scalapino, in:
Computer Simulations in Condensed Matter Physics
VII, D.P. Landau, K.K. Mon, and H.B. Sch�ttler
(eds.), Spinger Verlag, Heidelberg, Berlin (1994).
20. H. Endres, Ph. D. Thesis, (1996).
21. W. Metzner, Phys. Rev. B43, 8549 (1991).
22. S. Pairault, D. S�n�chal, and A.M.S. Tremblay, Eur.
Phys. J. B16, 85 (2000).
23. S. Pairault, D. S�n�chal, and A.-M.S. Tremblay,
Phys. Rev. Lett. 80, 5389 (1998).
24. W. Brenig, Phys. Rep. 251, 154 (1995).
25. C. D�rr, S. Legner, R. Hayn, S.V. Borisenko, Z. Hu,
A. Theresiak, M. Knupfer, M.S. Golden, J. Fink,
F. Ronning, Z.-X. Shen, H. Eisaki, S. Uchida, C. Jano-
witz, R. M�ller, R.L. Johnson, K. Rossnagel, L. Kipp,
and G. Reichardt, Phys. Rev. B63, 014505 (2001).
26. S. LaRosa, I. Vobornik, F. Zwick, H. Berger, M. Gri-
oni, G. Margaritondo, R.J. Kelley, M. Onellion, and
A. Chubukov, Phys. Rev. B56, R525 (1997).
27. B.O. Wells, Z.-X. Shen, A. Matsuura, D.M. King,
M.A. Kastner, M. Greven, and R.J. Birgeneau, Phys.
Rev. Lett. 74, 964 (1995).
28. F. Ronning, C. Kim, K. Shen, N. Armitage, A. Da-
mascelli, D. Lu, D. Feng, Z.-X. Shen, L. Miller, Y.-J.
Kim, F. Chou, and I. Terasaki, cond-mat/0209651
(unpublished).
29. R. Preuss, W. Hanke, and W. von der Linden, Phys.
Rev. Lett. 75, 1344 (1995).
30. R. Eder and Y. Ohta, Phys. Rev. B56, 2542 (1997).
31. A. Dorneich, M.G. Zacher, C. Gr�ber, and R. Eder,
cond-mat/9909352 (unpublished).
32. Note that the doping levels are slightly different, since
the available fillings in CPT are constrained by the
cluster sizes.
33. Q. Yuan, F. Yuan, and C.S. Ting, cond-mat/0503056
(unpublished).
608 Fizika Nizkikh Temperatur, 2006, v. 32, Nos. 4/5
C. Dahnken, M. Potthoff, E. Arrigoni, and W. Hanke
|
| id | nasplib_isofts_kiev_ua-123456789-120195 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 0132-6414 |
| language | English |
| last_indexed | 2025-12-07T18:35:31Z |
| publishDate | 2006 |
| publisher | Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
| record_format | dspace |
| spelling | Dahnken, C. Potthoff, M. Arrigoni, E. Hanke, W. 2017-06-11T12:14:54Z 2017-06-11T12:14:54Z 2006 Correlated band structure of electron-doped cuprate
 materials / C. Dahnken, M. Potthoff, E. Arrigoni, W. Hanke // Физика низких температур. — 2006. — Т. 32, № 4-5. — С. 602– 608. — Бібліогр.: 33 назв. — англ. 0132-6414 PACS: 74.25.Jb, 74.72.—h https://nasplib.isofts.kiev.ua/handle/123456789/120195 We present a numerical study of the doping dependence of the spectral function of the n-type
 cuprates. Using a variational cluster-perturbation theory approach based upon the self-energyfunctional
 theory, the spectral function of the electron-doped two-dimensional Hubbard model is
 calculated. The model includes the next-nearest neighbor electronic hopping amplitude t' and a
 fixed on-site interaction U - 8t at half-filling and doping levels ranging from x - 0.077 to x - 0.20 .
 Our results support the fact that a comprehensive description of the single-particle spectrum of
 electron-doped cuprates requires a proper treatment of strong electronic correlations. In contrast
 to previous weak-coupling approaches, we obtain a consistent description of the ARPES
 experiments without the need to (artificially) introduce a doping-dependent on-site interaction U. The authors would like to acknowledge support
 by the DFG-Forschergruppe: Doping-dependence of
 phase transitions and ordering phenomena in cuprate superconductors (FOR 538), and by the Bavarian
 KONWHIR project CUHE. This research was supported
 in part by the National Science Foundation
 under Grant No. PHY99-0794. One of us (WH)
 would like to acknowledge the warm hospitality of the
 Kavli Institute for Theoretical Physics in Santa Barbara,
 where part of this work was concluded. en Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України Физика низких температур Strong Correlations Correlated band structure of electron-doped cuprate materials Article published earlier |
| spellingShingle | Correlated band structure of electron-doped cuprate materials Dahnken, C. Potthoff, M. Arrigoni, E. Hanke, W. Strong Correlations |
| title | Correlated band structure of electron-doped cuprate materials |
| title_full | Correlated band structure of electron-doped cuprate materials |
| title_fullStr | Correlated band structure of electron-doped cuprate materials |
| title_full_unstemmed | Correlated band structure of electron-doped cuprate materials |
| title_short | Correlated band structure of electron-doped cuprate materials |
| title_sort | correlated band structure of electron-doped cuprate materials |
| topic | Strong Correlations |
| topic_facet | Strong Correlations |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/120195 |
| work_keys_str_mv | AT dahnkenc correlatedbandstructureofelectrondopedcupratematerials AT potthoffm correlatedbandstructureofelectrondopedcupratematerials AT arrigonie correlatedbandstructureofelectrondopedcupratematerials AT hankew correlatedbandstructureofelectrondopedcupratematerials |