Electron structure and electron–phonon interaction in the strongly correlated electron system of cuprates
The generalized tight-binding method presents a practical realization of the scheme that describes quasiparticles in strongly correlated electron system and consists of exact intra-cell diagonalization of the model Hamiltonian and perturbative treatment of the inter-cell hoppings. In present pape...
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| Veröffentlicht in: | Физика низких температур |
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| Datum: | 2006 |
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2006
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| Schlagworte: | |
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/120198 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Electron structure and electron–phonon interaction in the strongly correlated electron system of cuprates / S.G. Ovchinnikov, V.A. Gavrichkov, M.M. Korshunov, E.I. Shneyder // Физика низких температур. — 2006. — Т. 32, № 4-5. — С. 634–640. — Бібліогр.: 36 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | The generalized tight-binding method presents a practical realization of the scheme that describes
quasiparticles in strongly correlated electron system and consists of exact intra-cell
diagonalization of the model Hamiltonian and perturbative treatment of the inter-cell hoppings. In
present paper this method and its ab initio modification applied to undoped and weakly doped
HTSC cuprates. Results are in very good agreement with the experimental ARPES data on various
compounds. Starting with multiband p—d model the realistic effective low-energy Hamiltonian of
strongly correlated electrons interacting with spin fluctuations and phonons is derived both for
hole and electron doped systems. Without electron—phonon interaction the pure magnetic mechanism
of pairing does not provide the correct value of Tc even for single-layer La₂₋xSrxCuO₄ and
Nd₂₋xCexCuO₄.
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| ISSN: | 0132-6414 |