Electron structure and electron–phonon interaction in the strongly correlated electron system of cuprates

The generalized tight-binding method presents a practical realization of the scheme that describes
 quasiparticles in strongly correlated electron system and consists of exact intra-cell
 diagonalization of the model Hamiltonian and perturbative treatment of the inter-cell hoppings....

Повний опис

Збережено в:
Бібліографічні деталі
Опубліковано в: :Физика низких температур
Дата:2006
Автори: Ovchinnikov, S.G., Gavrichkov, V.A., Korshunov, M.M., Shneyder, E.I.
Формат: Стаття
Мова:Англійська
Опубліковано: Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України 2006
Теми:
Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/120198
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Electron structure and electron–phonon interaction in the
 strongly correlated electron system of cuprates / S.G. Ovchinnikov, V.A. Gavrichkov, M.M. Korshunov, E.I. Shneyder // Физика низких температур. — 2006. — Т. 32, № 4-5. — С. 634–640. — Бібліогр.: 36 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
Опис
Резюме:The generalized tight-binding method presents a practical realization of the scheme that describes
 quasiparticles in strongly correlated electron system and consists of exact intra-cell
 diagonalization of the model Hamiltonian and perturbative treatment of the inter-cell hoppings. In
 present paper this method and its ab initio modification applied to undoped and weakly doped
 HTSC cuprates. Results are in very good agreement with the experimental ARPES data on various
 compounds. Starting with multiband p—d model the realistic effective low-energy Hamiltonian of
 strongly correlated electrons interacting with spin fluctuations and phonons is derived both for
 hole and electron doped systems. Without electron—phonon interaction the pure magnetic mechanism
 of pairing does not provide the correct value of Tc even for single-layer La₂₋xSrxCuO₄ and
 Nd₂₋xCexCuO₄.
ISSN:0132-6414