Electron structure and electron–phonon interaction in the strongly correlated electron system of cuprates
The generalized tight-binding method presents a practical realization of the scheme that describes quasiparticles in strongly correlated electron system and consists of exact intra-cell diagonalization of the model Hamiltonian and perturbative treatment of the inter-cell hoppings. In present pape...
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| Опубліковано в: : | Физика низких температур |
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| Дата: | 2006 |
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| Формат: | Стаття |
| Мова: | English |
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Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2006
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Electron structure and electron–phonon interaction in the strongly correlated electron system of cuprates / S.G. Ovchinnikov, V.A. Gavrichkov, M.M. Korshunov, E.I. Shneyder // Физика низких температур. — 2006. — Т. 32, № 4-5. — С. 634–640. — Бібліогр.: 36 назв. — англ. |
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Ovchinnikov, S.G. Gavrichkov, V.A. Korshunov, M.M. Shneyder, E.I. 2017-06-11T12:17:05Z 2017-06-11T12:17:05Z 2006 Electron structure and electron–phonon interaction in the strongly correlated electron system of cuprates / S.G. Ovchinnikov, V.A. Gavrichkov, M.M. Korshunov, E.I. Shneyder // Физика низких температур. — 2006. — Т. 32, № 4-5. — С. 634–640. — Бібліогр.: 36 назв. — англ. 0132-6414 PASC: 74.72.–h; 74.20.Mn; 74.25.Jb; 74.25.Kc https://nasplib.isofts.kiev.ua/handle/123456789/120198 The generalized tight-binding method presents a practical realization of the scheme that describes quasiparticles in strongly correlated electron system and consists of exact intra-cell diagonalization of the model Hamiltonian and perturbative treatment of the inter-cell hoppings. In present paper this method and its ab initio modification applied to undoped and weakly doped HTSC cuprates. Results are in very good agreement with the experimental ARPES data on various compounds. Starting with multiband p—d model the realistic effective low-energy Hamiltonian of strongly correlated electrons interacting with spin fluctuations and phonons is derived both for hole and electron doped systems. Without electron—phonon interaction the pure magnetic mechanism of pairing does not provide the correct value of Tc even for single-layer La₂₋xSrxCuO₄ and Nd₂₋xCexCuO₄. This work has been supported by RFBR grant 03-02-16124 and Russian Academy of Science Program «Quantum Macrophysics». One of the authors (E.I.S.) acknowledges support from Dynasty Foundation and ICFPM, and «Russian Science Support Foundation». en Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України Физика низких температур Strong Correlations Electron structure and electron–phonon interaction in the strongly correlated electron system of cuprates Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Electron structure and electron–phonon interaction in the strongly correlated electron system of cuprates |
| spellingShingle |
Electron structure and electron–phonon interaction in the strongly correlated electron system of cuprates Ovchinnikov, S.G. Gavrichkov, V.A. Korshunov, M.M. Shneyder, E.I. Strong Correlations |
| title_short |
Electron structure and electron–phonon interaction in the strongly correlated electron system of cuprates |
| title_full |
Electron structure and electron–phonon interaction in the strongly correlated electron system of cuprates |
| title_fullStr |
Electron structure and electron–phonon interaction in the strongly correlated electron system of cuprates |
| title_full_unstemmed |
Electron structure and electron–phonon interaction in the strongly correlated electron system of cuprates |
| title_sort |
electron structure and electron–phonon interaction in the strongly correlated electron system of cuprates |
| author |
Ovchinnikov, S.G. Gavrichkov, V.A. Korshunov, M.M. Shneyder, E.I. |
| author_facet |
Ovchinnikov, S.G. Gavrichkov, V.A. Korshunov, M.M. Shneyder, E.I. |
| topic |
Strong Correlations |
| topic_facet |
Strong Correlations |
| publishDate |
2006 |
| language |
English |
| container_title |
Физика низких температур |
| publisher |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
| format |
Article |
| description |
The generalized tight-binding method presents a practical realization of the scheme that describes
quasiparticles in strongly correlated electron system and consists of exact intra-cell
diagonalization of the model Hamiltonian and perturbative treatment of the inter-cell hoppings. In
present paper this method and its ab initio modification applied to undoped and weakly doped
HTSC cuprates. Results are in very good agreement with the experimental ARPES data on various
compounds. Starting with multiband p—d model the realistic effective low-energy Hamiltonian of
strongly correlated electrons interacting with spin fluctuations and phonons is derived both for
hole and electron doped systems. Without electron—phonon interaction the pure magnetic mechanism
of pairing does not provide the correct value of Tc even for single-layer La₂₋xSrxCuO₄ and
Nd₂₋xCexCuO₄.
|
| issn |
0132-6414 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/120198 |
| citation_txt |
Electron structure and electron–phonon interaction in the strongly correlated electron system of cuprates / S.G. Ovchinnikov, V.A. Gavrichkov, M.M. Korshunov, E.I. Shneyder // Физика низких температур. — 2006. — Т. 32, № 4-5. — С. 634–640. — Бібліогр.: 36 назв. — англ. |
| work_keys_str_mv |
AT ovchinnikovsg electronstructureandelectronphononinteractioninthestronglycorrelatedelectronsystemofcuprates AT gavrichkovva electronstructureandelectronphononinteractioninthestronglycorrelatedelectronsystemofcuprates AT korshunovmm electronstructureandelectronphononinteractioninthestronglycorrelatedelectronsystemofcuprates AT shneyderei electronstructureandelectronphononinteractioninthestronglycorrelatedelectronsystemofcuprates |
| first_indexed |
2025-12-07T17:41:23Z |
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2025-12-07T17:41:23Z |
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1850872203863654400 |