Exciton-enhanced recombination in silicon at high concentrations of charge carriers
The interrelation between processes of electron-hole recombination and annihilation of excitons in silicon is examined. It is shown, that recombination processes can be essentially influenced by the exciton annihilation at high concentrations of non-equilibrium or equilibrium charge carriers. In n-t...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2000 |
| Main Authors: | , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/120224 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Exciton-enhanced recombination in silicon at high concentrations of charge carriers / A.V. Sachenko, A.P. Gorban, V.P. Kostylyov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 5-10. — Бібліогр.: 28 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862724238778040320 |
|---|---|
| author | Sachenko, A.V. Gorban, A.P. Kostylyov, V.P. |
| author_facet | Sachenko, A.V. Gorban, A.P. Kostylyov, V.P. |
| citation_txt | Exciton-enhanced recombination in silicon at high concentrations of charge carriers / A.V. Sachenko, A.P. Gorban, V.P. Kostylyov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 5-10. — Бібліогр.: 28 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The interrelation between processes of electron-hole recombination and annihilation of excitons in silicon is examined. It is shown, that recombination processes can be essentially influenced by the exciton annihilation at high concentrations of non-equilibrium or equilibrium charge carriers. In n-type material a correlation between Shockley-Reed-Hall lifetime values and a square-law recombination coefficient is found. This correlation is explained in terms of assumption that both Shockley-Reed-Hall lifetime, and non-radiative exciton annihilation time constant responsible for a square-law recombination, are determined by the same deep level. It is stated, that the mentioned regularities should essentially affect the bulk lifetime values in n-type silicon at doping concentration exceeding 10¹⁶ cm⁻³.
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| first_indexed | 2025-12-07T18:45:59Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-120224 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T18:45:59Z |
| publishDate | 2000 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Sachenko, A.V. Gorban, A.P. Kostylyov, V.P. 2017-06-11T13:10:03Z 2017-06-11T13:10:03Z 2000 Exciton-enhanced recombination in silicon at high concentrations of charge carriers / A.V. Sachenko, A.P. Gorban, V.P. Kostylyov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 5-10. — Бібліогр.: 28 назв. — англ. 1560-8034 PACS: 72.20. J; 78.60. J https://nasplib.isofts.kiev.ua/handle/123456789/120224 The interrelation between processes of electron-hole recombination and annihilation of excitons in silicon is examined. It is shown, that recombination processes can be essentially influenced by the exciton annihilation at high concentrations of non-equilibrium or equilibrium charge carriers. In n-type material a correlation between Shockley-Reed-Hall lifetime values and a square-law recombination coefficient is found. This correlation is explained in terms of assumption that both Shockley-Reed-Hall lifetime, and non-radiative exciton annihilation time constant responsible for a square-law recombination, are determined by the same deep level. It is stated, that the mentioned regularities should essentially affect the bulk lifetime values in n-type silicon at doping concentration exceeding 10¹⁶ cm⁻³. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Exciton-enhanced recombination in silicon at high concentrations of charge carriers Article published earlier |
| spellingShingle | Exciton-enhanced recombination in silicon at high concentrations of charge carriers Sachenko, A.V. Gorban, A.P. Kostylyov, V.P. |
| title | Exciton-enhanced recombination in silicon at high concentrations of charge carriers |
| title_full | Exciton-enhanced recombination in silicon at high concentrations of charge carriers |
| title_fullStr | Exciton-enhanced recombination in silicon at high concentrations of charge carriers |
| title_full_unstemmed | Exciton-enhanced recombination in silicon at high concentrations of charge carriers |
| title_short | Exciton-enhanced recombination in silicon at high concentrations of charge carriers |
| title_sort | exciton-enhanced recombination in silicon at high concentrations of charge carriers |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/120224 |
| work_keys_str_mv | AT sachenkoav excitonenhancedrecombinationinsiliconathighconcentrationsofchargecarriers AT gorbanap excitonenhancedrecombinationinsiliconathighconcentrationsofchargecarriers AT kostylyovvp excitonenhancedrecombinationinsiliconathighconcentrationsofchargecarriers |