Buchumschlag

Exciton-enhanced recombination in silicon at high concentrations of charge carriers

The interrelation between processes of electron-hole recombination and annihilation of excitons in silicon is examined. It is shown, that recombination processes can be essentially influenced by the exciton annihilation at high concentrations of non-equilibrium or equilibrium charge carriers. In n-t...

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Veröffentlicht in:	Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:	2000
Hauptverfasser:	Sachenko, A.V., Gorban, A.P., Kostylyov, V.P.
Format:	Artikel
Sprache:	Englisch
Veröffentlicht:	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2000
Online Zugang:	https://nasplib.isofts.kiev.ua/handle/123456789/120224
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:	Exciton-enhanced recombination in silicon at high concentrations of charge carriers / A.V. Sachenko, A.P. Gorban, V.P. Kostylyov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 5-10. — Бібліогр.: 28 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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