APA (7th ed.) Citation

Neimash, V., Puzenko, O., Kraitchinskii, A., Krasko, M., Putselyk, S., Claeys, C., & Simoen, E. (2000). Microfluctuations of oxygen impurity concentration as a reason of accelerated oxygen diffusion in silicon. Semiconductor Physics Quantum Electronics & Optoelectronics.

Chicago Style (17th ed.) Citation

Neimash, V.B, O.O Puzenko, A.M Kraitchinskii, M.M Krasko, S. Putselyk, C. Claeys, and E. Simoen. "Microfluctuations of Oxygen Impurity Concentration as a Reason of Accelerated Oxygen Diffusion in Silicon." Semiconductor Physics Quantum Electronics & Optoelectronics 2000.

MLA (8th ed.) Citation

Neimash, V.B, et al. "Microfluctuations of Oxygen Impurity Concentration as a Reason of Accelerated Oxygen Diffusion in Silicon." Semiconductor Physics Quantum Electronics & Optoelectronics, 2000.

Warning: These citations may not always be 100% accurate.