Microfluctuations of oxygen impurity concentration as a reason of accelerated oxygen diffusion in silicon
Activation energy of thermal donors annealing increases from 1.7 to 2.5 eV on preliminary heat treatment of the Si crystals at 800⁰C. It is believed that this fact results from the dissolution of oxygen microfluctuations that are considered to be sources of intrinsic elastic strains and thereby to l...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2000 |
| Автори: | , , , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/120226 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Microfluctuations of oxygen impurity concentration as a reason of accelerated oxygen diffusion in silicon / V.B. Neimash, O.O. Puzenko, A.M. Kraitchinskii, M.M. Kras'ko, S.Putselyk, C. Claeys, E. Simoen // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 11-14. — Бібліогр.: 17 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-120226 |
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dspace |
| spelling |
Neimash, V.B. Puzenko, O.O. Kraitchinskii, A.M. Krasko, M.M. Putselyk, S. Claeys, C. Simoen, E. 2017-06-11T13:11:43Z 2017-06-11T13:11:43Z 2000 Microfluctuations of oxygen impurity concentration as a reason of accelerated oxygen diffusion in silicon / V.B. Neimash, O.O. Puzenko, A.M. Kraitchinskii, M.M. Kras'ko, S.Putselyk, C. Claeys, E. Simoen // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 11-14. — Бібліогр.: 17 назв. — англ. 1560-8034 PACS: 61.72.T, C, 66.30.L, 72.80.C, 73.61.C https://nasplib.isofts.kiev.ua/handle/123456789/120226 Activation energy of thermal donors annealing increases from 1.7 to 2.5 eV on preliminary heat treatment of the Si crystals at 800⁰C. It is believed that this fact results from the dissolution of oxygen microfluctuations that are considered to be sources of intrinsic elastic strains and thereby to lie at the basis of locally accelerated oxygen diffusion. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Microfluctuations of oxygen impurity concentration as a reason of accelerated oxygen diffusion in silicon Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Microfluctuations of oxygen impurity concentration as a reason of accelerated oxygen diffusion in silicon |
| spellingShingle |
Microfluctuations of oxygen impurity concentration as a reason of accelerated oxygen diffusion in silicon Neimash, V.B. Puzenko, O.O. Kraitchinskii, A.M. Krasko, M.M. Putselyk, S. Claeys, C. Simoen, E. |
| title_short |
Microfluctuations of oxygen impurity concentration as a reason of accelerated oxygen diffusion in silicon |
| title_full |
Microfluctuations of oxygen impurity concentration as a reason of accelerated oxygen diffusion in silicon |
| title_fullStr |
Microfluctuations of oxygen impurity concentration as a reason of accelerated oxygen diffusion in silicon |
| title_full_unstemmed |
Microfluctuations of oxygen impurity concentration as a reason of accelerated oxygen diffusion in silicon |
| title_sort |
microfluctuations of oxygen impurity concentration as a reason of accelerated oxygen diffusion in silicon |
| author |
Neimash, V.B. Puzenko, O.O. Kraitchinskii, A.M. Krasko, M.M. Putselyk, S. Claeys, C. Simoen, E. |
| author_facet |
Neimash, V.B. Puzenko, O.O. Kraitchinskii, A.M. Krasko, M.M. Putselyk, S. Claeys, C. Simoen, E. |
| publishDate |
2000 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Activation energy of thermal donors annealing increases from 1.7 to 2.5 eV on preliminary heat treatment of the Si crystals at 800⁰C. It is believed that this fact results from the dissolution of oxygen microfluctuations that are considered to be sources of intrinsic elastic strains and thereby to lie at the basis of locally accelerated oxygen diffusion.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/120226 |
| citation_txt |
Microfluctuations of oxygen impurity concentration as a reason of accelerated oxygen diffusion in silicon / V.B. Neimash, O.O. Puzenko, A.M. Kraitchinskii, M.M. Kras'ko, S.Putselyk, C. Claeys, E. Simoen // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 11-14. — Бібліогр.: 17 назв. — англ. |
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2025-12-07T18:25:43Z |
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