Microfluctuations of oxygen impurity concentration as a reason of accelerated oxygen diffusion in silicon
Activation energy of thermal donors annealing increases from 1.7 to 2.5 eV on preliminary heat treatment of the Si crystals at 800⁰C. It is believed that this fact results from the dissolution of oxygen microfluctuations that are considered to be sources of intrinsic elastic strains and thereby to l...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2000 |
| Hauptverfasser: | , , , , , , |
| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/120226 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Microfluctuations of oxygen impurity concentration as a reason of accelerated oxygen diffusion in silicon / V.B. Neimash, O.O. Puzenko, A.M. Kraitchinskii, M.M. Kras'ko, S.Putselyk, C. Claeys, E. Simoen // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 11-14. — Бібліогр.: 17 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862720535745527808 |
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| author | Neimash, V.B. Puzenko, O.O. Kraitchinskii, A.M. Krasko, M.M. Putselyk, S. Claeys, C. Simoen, E. |
| author_facet | Neimash, V.B. Puzenko, O.O. Kraitchinskii, A.M. Krasko, M.M. Putselyk, S. Claeys, C. Simoen, E. |
| citation_txt | Microfluctuations of oxygen impurity concentration as a reason of accelerated oxygen diffusion in silicon / V.B. Neimash, O.O. Puzenko, A.M. Kraitchinskii, M.M. Kras'ko, S.Putselyk, C. Claeys, E. Simoen // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 11-14. — Бібліогр.: 17 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Activation energy of thermal donors annealing increases from 1.7 to 2.5 eV on preliminary heat treatment of the Si crystals at 800⁰C. It is believed that this fact results from the dissolution of oxygen microfluctuations that are considered to be sources of intrinsic elastic strains and thereby to lie at the basis of locally accelerated oxygen diffusion.
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| first_indexed | 2025-12-07T18:25:43Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-120226 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T18:25:43Z |
| publishDate | 2000 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Neimash, V.B. Puzenko, O.O. Kraitchinskii, A.M. Krasko, M.M. Putselyk, S. Claeys, C. Simoen, E. 2017-06-11T13:11:43Z 2017-06-11T13:11:43Z 2000 Microfluctuations of oxygen impurity concentration as a reason of accelerated oxygen diffusion in silicon / V.B. Neimash, O.O. Puzenko, A.M. Kraitchinskii, M.M. Kras'ko, S.Putselyk, C. Claeys, E. Simoen // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 11-14. — Бібліогр.: 17 назв. — англ. 1560-8034 PACS: 61.72.T, C, 66.30.L, 72.80.C, 73.61.C https://nasplib.isofts.kiev.ua/handle/123456789/120226 Activation energy of thermal donors annealing increases from 1.7 to 2.5 eV on preliminary heat treatment of the Si crystals at 800⁰C. It is believed that this fact results from the dissolution of oxygen microfluctuations that are considered to be sources of intrinsic elastic strains and thereby to lie at the basis of locally accelerated oxygen diffusion. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Microfluctuations of oxygen impurity concentration as a reason of accelerated oxygen diffusion in silicon Article published earlier |
| spellingShingle | Microfluctuations of oxygen impurity concentration as a reason of accelerated oxygen diffusion in silicon Neimash, V.B. Puzenko, O.O. Kraitchinskii, A.M. Krasko, M.M. Putselyk, S. Claeys, C. Simoen, E. |
| title | Microfluctuations of oxygen impurity concentration as a reason of accelerated oxygen diffusion in silicon |
| title_full | Microfluctuations of oxygen impurity concentration as a reason of accelerated oxygen diffusion in silicon |
| title_fullStr | Microfluctuations of oxygen impurity concentration as a reason of accelerated oxygen diffusion in silicon |
| title_full_unstemmed | Microfluctuations of oxygen impurity concentration as a reason of accelerated oxygen diffusion in silicon |
| title_short | Microfluctuations of oxygen impurity concentration as a reason of accelerated oxygen diffusion in silicon |
| title_sort | microfluctuations of oxygen impurity concentration as a reason of accelerated oxygen diffusion in silicon |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/120226 |
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