Microfluctuations of oxygen impurity concentration as a reason of accelerated oxygen diffusion in silicon

• Опубліковано в: : Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2000
• Автори: Neimash, V.B., Puzenko, O.O., Kraitchinskii, A.M., Krasko, M.M., Putselyk, S., Claeys, C., Simoen, E.
• Формат: Стаття
• Мова: Англійська
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2000
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/120226
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Microfluctuations of oxygen impurity concentration as a reason of accelerated oxygen diffusion in silicon / V.B. Neimash, O.O. Puzenko, A.M. Kraitchinskii, M.M. Kras'ko, S.Putselyk, C. Claeys, E. Simoen // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 11-14. — Бібліогр.: 17 назв. — англ.

Activation energy of thermal donors annealing increases from 1.7 to 2.5 eV on preliminary heat treatment of the Si crystals at 800⁰C. It is believed that this fact results from the dissolution of oxygen microfluctuations that are considered to be sources of intrinsic elastic strains and thereby to l...