Ultrasound effect on radiation damages in boron implanted silicon

The radiation defect distribution in boron implanted Si with and without ultrasound (US) treatment have been investigated. Obtained results have shown the significant influence of the in situ US treatment on the defect formation. The defect concentration decreases both in the as-implanted and post-a...

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Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2000
Main Authors: Romanjuk, B., Krüger, D., Melnik, V., Popov, V., Olikh, Ya., Soroka, V., Oberemok, O.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2000
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/120227
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Ultrasound effect on radiation damages in boron implanted silicon / B. Romanjuk, D. Krüger, V. Melnik, V. Popov, Ya. Olikh, V. Soroka, O. Oberemok // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 15-18. — Бібліогр.: 9 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
_version_ 1862700108364120064
author Romanjuk, B.
Krüger, D.
Melnik, V.
Popov, V.
Olikh, Ya.
Soroka, V.
Oberemok, O.
author_facet Romanjuk, B.
Krüger, D.
Melnik, V.
Popov, V.
Olikh, Ya.
Soroka, V.
Oberemok, O.
citation_txt Ultrasound effect on radiation damages in boron implanted silicon / B. Romanjuk, D. Krüger, V. Melnik, V. Popov, Ya. Olikh, V. Soroka, O. Oberemok // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 15-18. — Бібліогр.: 9 назв. — англ.
collection DSpace DC
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
description The radiation defect distribution in boron implanted Si with and without ultrasound (US) treatment have been investigated. Obtained results have shown the significant influence of the in situ US treatment on the defect formation. The defect concentration decreases both in the as-implanted and post-annealed samples, implanted with US-treatment. The physical model of this effect, connecting it with stimulated diffusion of silicon interstitials under the US treatment have been proposed.
first_indexed 2025-12-07T16:38:30Z
format Article
fulltext
id nasplib_isofts_kiev_ua-123456789-120227
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
issn 1560-8034
language English
last_indexed 2025-12-07T16:38:30Z
publishDate 2000
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
record_format dspace
spelling Romanjuk, B.
Krüger, D.
Melnik, V.
Popov, V.
Olikh, Ya.
Soroka, V.
Oberemok, O.
2017-06-11T13:12:33Z
2017-06-11T13:12:33Z
2000
Ultrasound effect on radiation damages in boron implanted silicon / B. Romanjuk, D. Krüger, V. Melnik, V. Popov, Ya. Olikh, V. Soroka, O. Oberemok // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 15-18. — Бібліогр.: 9 назв. — англ.
1560-8034
PACS 61.72T; 66.30L; 61.72
https://nasplib.isofts.kiev.ua/handle/123456789/120227
The radiation defect distribution in boron implanted Si with and without ultrasound (US) treatment have been investigated. Obtained results have shown the significant influence of the in situ US treatment on the defect formation. The defect concentration decreases both in the as-implanted and post-annealed samples, implanted with US-treatment. The physical model of this effect, connecting it with stimulated diffusion of silicon interstitials under the US treatment have been proposed.
We would like to thank Prof. V. Litovchenko and Prof. A. Ourmazd for helpful discussion.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Ultrasound effect on radiation damages in boron implanted silicon
Article
published earlier
spellingShingle Ultrasound effect on radiation damages in boron implanted silicon
Romanjuk, B.
Krüger, D.
Melnik, V.
Popov, V.
Olikh, Ya.
Soroka, V.
Oberemok, O.
title Ultrasound effect on radiation damages in boron implanted silicon
title_full Ultrasound effect on radiation damages in boron implanted silicon
title_fullStr Ultrasound effect on radiation damages in boron implanted silicon
title_full_unstemmed Ultrasound effect on radiation damages in boron implanted silicon
title_short Ultrasound effect on radiation damages in boron implanted silicon
title_sort ultrasound effect on radiation damages in boron implanted silicon
url https://nasplib.isofts.kiev.ua/handle/123456789/120227
work_keys_str_mv AT romanjukb ultrasoundeffectonradiationdamagesinboronimplantedsilicon
AT krugerd ultrasoundeffectonradiationdamagesinboronimplantedsilicon
AT melnikv ultrasoundeffectonradiationdamagesinboronimplantedsilicon
AT popovv ultrasoundeffectonradiationdamagesinboronimplantedsilicon
AT olikhya ultrasoundeffectonradiationdamagesinboronimplantedsilicon
AT sorokav ultrasoundeffectonradiationdamagesinboronimplantedsilicon
AT oberemoko ultrasoundeffectonradiationdamagesinboronimplantedsilicon