Ultrasound effect on radiation damages in boron implanted silicon
The radiation defect distribution in boron implanted Si with and without ultrasound (US) treatment have been investigated. Obtained results have shown the significant influence of the in situ US treatment on the defect formation. The defect concentration decreases both in the as-implanted and post-a...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2000 |
| Hauptverfasser: | , , , , , , |
| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/120227 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Ultrasound effect on radiation damages in boron implanted silicon / B. Romanjuk, D. Krüger, V. Melnik, V. Popov, Ya. Olikh, V. Soroka, O. Oberemok // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 15-18. — Бібліогр.: 9 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862700108364120064 |
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| author | Romanjuk, B. Krüger, D. Melnik, V. Popov, V. Olikh, Ya. Soroka, V. Oberemok, O. |
| author_facet | Romanjuk, B. Krüger, D. Melnik, V. Popov, V. Olikh, Ya. Soroka, V. Oberemok, O. |
| citation_txt | Ultrasound effect on radiation damages in boron implanted silicon / B. Romanjuk, D. Krüger, V. Melnik, V. Popov, Ya. Olikh, V. Soroka, O. Oberemok // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 15-18. — Бібліогр.: 9 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The radiation defect distribution in boron implanted Si with and without ultrasound (US) treatment have been investigated. Obtained results have shown the significant influence of the in situ US treatment on the defect formation. The defect concentration decreases both in the as-implanted and post-annealed samples, implanted with US-treatment. The physical model of this effect, connecting it with stimulated diffusion of silicon interstitials under the US treatment have been proposed.
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| first_indexed | 2025-12-07T16:38:30Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-120227 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T16:38:30Z |
| publishDate | 2000 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Romanjuk, B. Krüger, D. Melnik, V. Popov, V. Olikh, Ya. Soroka, V. Oberemok, O. 2017-06-11T13:12:33Z 2017-06-11T13:12:33Z 2000 Ultrasound effect on radiation damages in boron implanted silicon / B. Romanjuk, D. Krüger, V. Melnik, V. Popov, Ya. Olikh, V. Soroka, O. Oberemok // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 15-18. — Бібліогр.: 9 назв. — англ. 1560-8034 PACS 61.72T; 66.30L; 61.72 https://nasplib.isofts.kiev.ua/handle/123456789/120227 The radiation defect distribution in boron implanted Si with and without ultrasound (US) treatment have been investigated. Obtained results have shown the significant influence of the in situ US treatment on the defect formation. The defect concentration decreases both in the as-implanted and post-annealed samples, implanted with US-treatment. The physical model of this effect, connecting it with stimulated diffusion of silicon interstitials under the US treatment have been proposed. We would like to thank Prof. V. Litovchenko and Prof. A. Ourmazd for helpful discussion. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Ultrasound effect on radiation damages in boron implanted silicon Article published earlier |
| spellingShingle | Ultrasound effect on radiation damages in boron implanted silicon Romanjuk, B. Krüger, D. Melnik, V. Popov, V. Olikh, Ya. Soroka, V. Oberemok, O. |
| title | Ultrasound effect on radiation damages in boron implanted silicon |
| title_full | Ultrasound effect on radiation damages in boron implanted silicon |
| title_fullStr | Ultrasound effect on radiation damages in boron implanted silicon |
| title_full_unstemmed | Ultrasound effect on radiation damages in boron implanted silicon |
| title_short | Ultrasound effect on radiation damages in boron implanted silicon |
| title_sort | ultrasound effect on radiation damages in boron implanted silicon |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/120227 |
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