Ultrasound effect on radiation damages in boron implanted silicon

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2000
• Hauptverfasser: Romanjuk, B., Krüger, D., Melnik, V., Popov, V., Olikh, Ya., Soroka, V., Oberemok, O.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2000
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/120227
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Ultrasound effect on radiation damages in boron implanted silicon / B. Romanjuk, D. Krüger, V. Melnik, V. Popov, Ya. Olikh, V. Soroka, O. Oberemok // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 15-18. — Бібліогр.: 9 назв. — англ.

The radiation defect distribution in boron implanted Si with and without ultrasound (US) treatment have been investigated. Obtained results have shown the significant influence of the in situ US treatment on the defect formation. The defect concentration decreases both in the as-implanted and post-a...