Accumulation dynamics of oxygen clusters in silicon and formation of their nonhomogeneous distribution
Kinetics of oxygen distribution variation and oxygen clusters (thermodonors) formation is considered and described by a system of nonlinear equations. Analytic solution is obtained for homogeneous nonstationary distribution of oxygen and its complexes. It is shown that due to the interaction of oxyg...
Saved in:
| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2000 |
| Main Author: | |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
|
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/120230 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Accumulation dynamics of oxygen clusters in silicon and formation of their nonhomogeneous distribution / P.A. Selishchev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 19-21. — Бібліогр.: 10 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-120230 |
|---|---|
| record_format |
dspace |
| spelling |
Selishchev, P.A. 2017-06-11T13:17:47Z 2017-06-11T13:17:47Z 2000 Accumulation dynamics of oxygen clusters in silicon and formation of their nonhomogeneous distribution / P.A. Selishchev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 19-21. — Бібліогр.: 10 назв. — англ. 1560-8034 PACS: 36.40. M, 61.66, 61.72. T, 68.65 https://nasplib.isofts.kiev.ua/handle/123456789/120230 Kinetics of oxygen distribution variation and oxygen clusters (thermodonors) formation is considered and described by a system of nonlinear equations. Analytic solution is obtained for homogeneous nonstationary distribution of oxygen and its complexes. It is shown that due to the interaction of oxygen interstitials and their complexes the homogeneous state becomes unstable at some conditions, and spatial periodical distribution develops. Its period lies in the range of 10-1000 Å . The author are grateful to O.A. Leontev for his contributuions to technical providing the work. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Accumulation dynamics of oxygen clusters in silicon and formation of their nonhomogeneous distribution Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Accumulation dynamics of oxygen clusters in silicon and formation of their nonhomogeneous distribution |
| spellingShingle |
Accumulation dynamics of oxygen clusters in silicon and formation of their nonhomogeneous distribution Selishchev, P.A. |
| title_short |
Accumulation dynamics of oxygen clusters in silicon and formation of their nonhomogeneous distribution |
| title_full |
Accumulation dynamics of oxygen clusters in silicon and formation of their nonhomogeneous distribution |
| title_fullStr |
Accumulation dynamics of oxygen clusters in silicon and formation of their nonhomogeneous distribution |
| title_full_unstemmed |
Accumulation dynamics of oxygen clusters in silicon and formation of their nonhomogeneous distribution |
| title_sort |
accumulation dynamics of oxygen clusters in silicon and formation of their nonhomogeneous distribution |
| author |
Selishchev, P.A. |
| author_facet |
Selishchev, P.A. |
| publishDate |
2000 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Kinetics of oxygen distribution variation and oxygen clusters (thermodonors) formation is considered and described by a system of nonlinear equations. Analytic solution is obtained for homogeneous nonstationary distribution of oxygen and its complexes. It is shown that due to the interaction of oxygen interstitials and their complexes the homogeneous state becomes unstable at some conditions, and spatial periodical distribution develops. Its period lies in the range of 10-1000 Å .
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/120230 |
| citation_txt |
Accumulation dynamics of oxygen clusters in silicon and formation of their nonhomogeneous distribution / P.A. Selishchev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 19-21. — Бібліогр.: 10 назв. — англ. |
| work_keys_str_mv |
AT selishchevpa accumulationdynamicsofoxygenclustersinsiliconandformationoftheirnonhomogeneousdistribution |
| first_indexed |
2025-12-07T20:07:00Z |
| last_indexed |
2025-12-07T20:07:00Z |
| _version_ |
1850881365079228416 |