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Accumulation dynamics of oxygen clusters in silicon and formation of their nonhomogeneous distribution

Kinetics of oxygen distribution variation and oxygen clusters (thermodonors) formation is considered and described by a system of nonlinear equations. Analytic solution is obtained for homogeneous nonstationary distribution of oxygen and its complexes. It is shown that due to the interaction of oxyg...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2000
ISSN:1560-8034
1. Verfasser: Selishchev, P.A.
Format: Artikel
Sprache:Englisch
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2000
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/120230
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Accumulation dynamics of oxygen clusters in silicon and formation of their nonhomogeneous distribution / P.A. Selishchev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 19-21. — Бібліогр.: 10 назв. — англ.

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