Development and optical characteristics of the macroporous silicon structures
The promising material for the 2D photonic structure formation for infrared spectrum range is macroporous silicon. There was investigated the electrochemical process of the cylindrical pore formation on n-Si plates for linear change of applied voltage. The experimental dependences of the regimes of...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2000 |
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/120231 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Development and optical characteristics of the macroporous silicon structures / L.A. Karachevtseva , O.A. Lytvynenko, O.J. Stronska // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 22-25. — Бібліогр.: 17 назв. — англ. |
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Karachevtseva, L.A. Lytvynenko, O.A. Stronska, O.J. 2017-06-11T13:24:11Z 2017-06-11T13:24:11Z 2000 Development and optical characteristics of the macroporous silicon structures / L.A. Karachevtseva , O.A. Lytvynenko, O.J. Stronska // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 22-25. — Бібліогр.: 17 назв. — англ. 1560-8034 PACS: 73.40M, 78.40F https://nasplib.isofts.kiev.ua/handle/123456789/120231 The promising material for the 2D photonic structure formation for infrared spectrum range is macroporous silicon. There was investigated the electrochemical process of the cylindrical pore formation on n-Si plates for linear change of applied voltage. The experimental dependences of the regimes of macropore formation correspond to the diffusion-drift model of the nonequilibrium hole transfer for the anode thickness, that exceed the length of hole diffusion and for comparatively big macropore radii. Optical transmission of the macropore structures was measured and was equal to 10⁻² comparing to that of homogeneous material; surface recombination component was estimated. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Development and optical characteristics of the macroporous silicon structures Article published earlier |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Development and optical characteristics of the macroporous silicon structures |
| spellingShingle |
Development and optical characteristics of the macroporous silicon structures Karachevtseva, L.A. Lytvynenko, O.A. Stronska, O.J. |
| title_short |
Development and optical characteristics of the macroporous silicon structures |
| title_full |
Development and optical characteristics of the macroporous silicon structures |
| title_fullStr |
Development and optical characteristics of the macroporous silicon structures |
| title_full_unstemmed |
Development and optical characteristics of the macroporous silicon structures |
| title_sort |
development and optical characteristics of the macroporous silicon structures |
| author |
Karachevtseva, L.A. Lytvynenko, O.A. Stronska, O.J. |
| author_facet |
Karachevtseva, L.A. Lytvynenko, O.A. Stronska, O.J. |
| publishDate |
2000 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
The promising material for the 2D photonic structure formation for infrared spectrum range is macroporous silicon. There was investigated the electrochemical process of the cylindrical pore formation on n-Si plates for linear change of applied voltage. The experimental dependences of the regimes of macropore formation correspond to the diffusion-drift model of the nonequilibrium hole transfer for the anode thickness, that exceed the length of hole diffusion and for comparatively big macropore radii. Optical transmission of the macropore structures was measured and was equal to 10⁻² comparing to that of homogeneous material; surface recombination component was estimated.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/120231 |
| citation_txt |
Development and optical characteristics of the macroporous silicon structures / L.A. Karachevtseva , O.A. Lytvynenko, O.J. Stronska // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 22-25. — Бібліогр.: 17 назв. — англ. |
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| first_indexed |
2025-12-07T17:02:03Z |
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2025-12-07T17:02:03Z |
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