Modification of photoelectric and electrical properties of III-V semiconductors by pulsed laser irradiation
The effect of nanosecond ruby laser pulses on the photoelectric and electrical properties of GaAs and InSb single crystals with different pre-treated surfaces was studied. The photoconductivity, surface recombination rate and electrical resistivity of the samples have been analysed before and after...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2000 |
| Автори: | , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/120232 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Modification of photoelectric and electrical properties of III-V semiconductors by pulsed laser irradiation / V.A. Gnatyuk, O.S. Gorodnychenko, P.O. Mozol, O.I. Vlasenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 26-30. — Бібліогр.: 14 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862546384271441920 |
|---|---|
| author | Gnatyuk, V.A. Gorodnychenko, O.S. Mozol, P.O. Vlasenko, O.I. |
| author_facet | Gnatyuk, V.A. Gorodnychenko, O.S. Mozol, P.O. Vlasenko, O.I. |
| citation_txt | Modification of photoelectric and electrical properties of III-V semiconductors by pulsed laser irradiation / V.A. Gnatyuk, O.S. Gorodnychenko, P.O. Mozol, O.I. Vlasenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 26-30. — Бібліогр.: 14 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The effect of nanosecond ruby laser pulses on the photoelectric and electrical properties of GaAs and InSb single crystals with different pre-treated surfaces was studied. The photoconductivity, surface recombination rate and electrical resistivity of the samples have been analysed before and after irradiation with laser pulses characterized by a wide range of energy densites. An increase in the photoconductivity and decrease in the surface recombination rate of the investigated crystals was attributed to cleaning of the crystal surface and to the laser-stimulated desorption and segregation of electrically active defects at sinks. A considerable reduction in the resistivity of GaAs and a shift of the maximum and of the red edge of the photoconductivity specrtrum of InSb crystals toward shorter wavelengths were observed after irradiation with laser pulses of energy density above the melting threshold. The reasons for the found phenomena have been determined and the mechanism of the action of laser-induced stress and shock waves on the structure and properties of the crystals has been discussed.
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| first_indexed | 2025-11-25T10:04:57Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-120232 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-25T10:04:57Z |
| publishDate | 2000 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Gnatyuk, V.A. Gorodnychenko, O.S. Mozol, P.O. Vlasenko, O.I. 2017-06-11T13:25:40Z 2017-06-11T13:25:40Z 2000 Modification of photoelectric and electrical properties of III-V semiconductors by pulsed laser irradiation / V.A. Gnatyuk, O.S. Gorodnychenko, P.O. Mozol, O.I. Vlasenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 26-30. — Бібліогр.: 14 назв. — англ. 1560-8034 PACS: 72.20; 72.40; 73.20; 42.62 https://nasplib.isofts.kiev.ua/handle/123456789/120232 The effect of nanosecond ruby laser pulses on the photoelectric and electrical properties of GaAs and InSb single crystals with different pre-treated surfaces was studied. The photoconductivity, surface recombination rate and electrical resistivity of the samples have been analysed before and after irradiation with laser pulses characterized by a wide range of energy densites. An increase in the photoconductivity and decrease in the surface recombination rate of the investigated crystals was attributed to cleaning of the crystal surface and to the laser-stimulated desorption and segregation of electrically active defects at sinks. A considerable reduction in the resistivity of GaAs and a shift of the maximum and of the red edge of the photoconductivity specrtrum of InSb crystals toward shorter wavelengths were observed after irradiation with laser pulses of energy density above the melting threshold. The reasons for the found phenomena have been determined and the mechanism of the action of laser-induced stress and shock waves on the structure and properties of the crystals has been discussed. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Modification of photoelectric and electrical properties of III-V semiconductors by pulsed laser irradiation Article published earlier |
| spellingShingle | Modification of photoelectric and electrical properties of III-V semiconductors by pulsed laser irradiation Gnatyuk, V.A. Gorodnychenko, O.S. Mozol, P.O. Vlasenko, O.I. |
| title | Modification of photoelectric and electrical properties of III-V semiconductors by pulsed laser irradiation |
| title_full | Modification of photoelectric and electrical properties of III-V semiconductors by pulsed laser irradiation |
| title_fullStr | Modification of photoelectric and electrical properties of III-V semiconductors by pulsed laser irradiation |
| title_full_unstemmed | Modification of photoelectric and electrical properties of III-V semiconductors by pulsed laser irradiation |
| title_short | Modification of photoelectric and electrical properties of III-V semiconductors by pulsed laser irradiation |
| title_sort | modification of photoelectric and electrical properties of iii-v semiconductors by pulsed laser irradiation |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/120232 |
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