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Modification of photoelectric and electrical properties of III-V semiconductors by pulsed laser irradiation

The effect of nanosecond ruby laser pulses on the photoelectric and electrical properties of GaAs and InSb single crystals with different pre-treated surfaces was studied. The photoconductivity, surface recombination rate and electrical resistivity of the samples have been analysed before and after...

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Bibliographic Details
Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2000
Main Authors: Gnatyuk, V.A., Gorodnychenko, O.S., Mozol, P.O., Vlasenko, O.I.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2000
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/120232
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Modification of photoelectric and electrical properties of III-V semiconductors by pulsed laser irradiation / V.A. Gnatyuk, O.S. Gorodnychenko, P.O. Mozol, O.I. Vlasenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 26-30. — Бібліогр.: 14 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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