AFM study of micromorphology and microscopic growth mechanisms of Hg₁₋x CdxTe LPE epitaxial layers
Mercury cadmium telluride epitaxial layers exhibiting large areas with nearly atomically-flat surface were grown using liquid phase epitaxy (LPE) from Te-rich solution in closed system. Evolution of surface morphology during different steps of LPE growth was studied using scanning probe microscopy....
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2000 |
| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/120233 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | AFM study of micromorphology and microscopic growth mechanisms of Hg₁₋x CdxTe LPE epitaxial layers / G.V. Beketov, L.V. Rashkovetskiy, O.V. Rengevych, G.I. Zhovnir // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 45-51. — Бібліогр.: 16 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-120233 |
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Beketov, G.V. Rashkovetskiy, L.V. Rengevych, O.V. Zhovnir, G.I. 2017-06-11T13:26:43Z 2017-06-11T13:26:43Z 2000 AFM study of micromorphology and microscopic growth mechanisms of Hg₁₋x CdxTe LPE epitaxial layers / G.V. Beketov, L.V. Rashkovetskiy, O.V. Rengevych, G.I. Zhovnir // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 45-51. — Бібліогр.: 16 назв. — англ. 1560-8034 PACS 68.65, 81.05. E, 81.15. L https://nasplib.isofts.kiev.ua/handle/123456789/120233 Mercury cadmium telluride epitaxial layers exhibiting large areas with nearly atomically-flat surface were grown using liquid phase epitaxy (LPE) from Te-rich solution in closed system. Evolution of surface morphology during different steps of LPE growth was studied using scanning probe microscopy. Various growth features including monomolecular steps were observed. Both scanning probe microscopy (SPM) images and surface composition analysis with X-ray fluorescence spectroscopy clearly showed that vapor phase growth at the melt homogenization step contributed to epilayer formation and further evolution of its morphology. It was found that formation of flat areas proceeds via a dislocation-controlled monomolecular step growth mechanism. Phenomenological estimation of local supersaturation conditions giving rise to these areas was given on the basis of the interstep distance of the growth spirals originating from screw dislocations. The results obtained suggest the way of radical morphological improvement of the LPE-grown epilayers. Authors would like to thank Dr. S. Kavertsev for helpful discussions and suggestions during the course of this work and to Dr. P. Lytvyn for measurements and iterpretation of X-ray fluorescence spectra. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics AFM study of micromorphology and microscopic growth mechanisms of Hg₁₋x CdxTe LPE epitaxial layers Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
AFM study of micromorphology and microscopic growth mechanisms of Hg₁₋x CdxTe LPE epitaxial layers |
| spellingShingle |
AFM study of micromorphology and microscopic growth mechanisms of Hg₁₋x CdxTe LPE epitaxial layers Beketov, G.V. Rashkovetskiy, L.V. Rengevych, O.V. Zhovnir, G.I. |
| title_short |
AFM study of micromorphology and microscopic growth mechanisms of Hg₁₋x CdxTe LPE epitaxial layers |
| title_full |
AFM study of micromorphology and microscopic growth mechanisms of Hg₁₋x CdxTe LPE epitaxial layers |
| title_fullStr |
AFM study of micromorphology and microscopic growth mechanisms of Hg₁₋x CdxTe LPE epitaxial layers |
| title_full_unstemmed |
AFM study of micromorphology and microscopic growth mechanisms of Hg₁₋x CdxTe LPE epitaxial layers |
| title_sort |
afm study of micromorphology and microscopic growth mechanisms of hg₁₋x cdxte lpe epitaxial layers |
| author |
Beketov, G.V. Rashkovetskiy, L.V. Rengevych, O.V. Zhovnir, G.I. |
| author_facet |
Beketov, G.V. Rashkovetskiy, L.V. Rengevych, O.V. Zhovnir, G.I. |
| publishDate |
2000 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Mercury cadmium telluride epitaxial layers exhibiting large areas with nearly atomically-flat surface were grown using liquid phase epitaxy (LPE) from Te-rich solution in closed system. Evolution of surface morphology during different steps of LPE growth was studied using scanning probe microscopy. Various growth features including monomolecular steps were observed. Both scanning probe microscopy (SPM) images and surface composition analysis with X-ray fluorescence spectroscopy clearly showed that vapor phase growth at the melt homogenization step contributed to epilayer formation and further evolution of its morphology. It was found that formation of flat areas proceeds via a dislocation-controlled monomolecular step growth mechanism. Phenomenological estimation of local supersaturation conditions giving rise to these areas was given on the basis of the interstep distance of the growth spirals originating from screw dislocations. The results obtained suggest the way of radical morphological improvement of the LPE-grown epilayers.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/120233 |
| citation_txt |
AFM study of micromorphology and microscopic growth mechanisms of Hg₁₋x CdxTe LPE epitaxial layers / G.V. Beketov, L.V. Rashkovetskiy, O.V. Rengevych, G.I. Zhovnir // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 45-51. — Бібліогр.: 16 назв. — англ. |
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2025-12-07T19:37:44Z |
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2025-12-07T19:37:44Z |
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