Laser – induced donor centers in p-InSb
The laser – induced donor centers in p-Insb have been studied by magneto-concentration effect (MCE). The distribution of donor centers in the nonequilibrium temperature field in InSb was obtained by redistribution of the interstitial In atoms (IIn) and vacanciens VIn under laser action. Comparison o...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2000 |
| Main Authors: | , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/120234 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Laser – induced donor centers in p-InSb / L. Fedorenko, A. Medvid // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 31-34. — Бібліогр.: 16 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862742372254744576 |
|---|---|
| author | Fedorenko, L. Medvid, A. |
| author_facet | Fedorenko, L. Medvid, A. |
| citation_txt | Laser – induced donor centers in p-InSb / L. Fedorenko, A. Medvid // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 31-34. — Бібліогр.: 16 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The laser – induced donor centers in p-Insb have been studied by magneto-concentration effect (MCE). The distribution of donor centers in the nonequilibrium temperature field in InSb was obtained by redistribution of the interstitial In atoms (IIn) and vacanciens VIn under laser action. Comparison of the theoretical calculation and experimental data showed that depth δ of the position of p-n junction increased with temperature, and that relatively large value of δ at used value of laser intensity (Р ~ 3.5 MW/cm²) is connected with presence of liquid phase during laser annealing process. Obtained results correlate with Atomic Force Microscopy (AFM) measurements. Experiments were performed on p-InSb samples in the temperature range 180–290 K. Temperature gradient was provided by YAG: Nd laser illumination (l = 0.53 µm, t = 15 ns). The laser donor centers (LDC) of two kinds were found: one is nonstable and annealed at room temperature with relaxation constant ~ 5 s, and the other is stable, annealed at temperature 670 K. The threshold of LDC formation is 1.5 MW/cm². The activation energy of the stable donor centers is 1,1 eV. Investigation of the surface morphology by AFM in dependence on the intensity of laser radiation showed a good agreement with obtained results.
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| first_indexed | 2025-12-07T20:24:43Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-120234 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T20:24:43Z |
| publishDate | 2000 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Fedorenko, L. Medvid, A. 2017-06-11T13:27:33Z 2017-06-11T13:27:33Z 2000 Laser – induced donor centers in p-InSb / L. Fedorenko, A. Medvid // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 31-34. — Бібліогр.: 16 назв. — англ. 1560-8034 PACS 61.72.V, 73.40 https://nasplib.isofts.kiev.ua/handle/123456789/120234 The laser – induced donor centers in p-Insb have been studied by magneto-concentration effect (MCE). The distribution of donor centers in the nonequilibrium temperature field in InSb was obtained by redistribution of the interstitial In atoms (IIn) and vacanciens VIn under laser action. Comparison of the theoretical calculation and experimental data showed that depth δ of the position of p-n junction increased with temperature, and that relatively large value of δ at used value of laser intensity (Р ~ 3.5 MW/cm²) is connected with presence of liquid phase during laser annealing process. Obtained results correlate with Atomic Force Microscopy (AFM) measurements. Experiments were performed on p-InSb samples in the temperature range 180–290 K. Temperature gradient was provided by YAG: Nd laser illumination (l = 0.53 µm, t = 15 ns). The laser donor centers (LDC) of two kinds were found: one is nonstable and annealed at room temperature with relaxation constant ~ 5 s, and the other is stable, annealed at temperature 670 K. The threshold of LDC formation is 1.5 MW/cm². The activation energy of the stable donor centers is 1,1 eV. Investigation of the surface morphology by AFM in dependence on the intensity of laser radiation showed a good agreement with obtained results. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Laser – induced donor centers in p-InSb Article published earlier |
| spellingShingle | Laser – induced donor centers in p-InSb Fedorenko, L. Medvid, A. |
| title | Laser – induced donor centers in p-InSb |
| title_full | Laser – induced donor centers in p-InSb |
| title_fullStr | Laser – induced donor centers in p-InSb |
| title_full_unstemmed | Laser – induced donor centers in p-InSb |
| title_short | Laser – induced donor centers in p-InSb |
| title_sort | laser – induced donor centers in p-insb |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/120234 |
| work_keys_str_mv | AT fedorenkol laserinduceddonorcentersinpinsb AT medvida laserinduceddonorcentersinpinsb |