Laser – induced donor centers in p-InSb

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2000
• ISSN: 1560-8034
• Main Authors: Fedorenko, L., Medvid, A.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2000
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/120234
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Laser – induced donor centers in p-InSb / L. Fedorenko, A. Medvid // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 31-34. — Бібліогр.: 16 назв. — англ.

The laser – induced donor centers in p-Insb have been studied by magneto-concentration effect (MCE). The distribution of donor centers in the nonequilibrium temperature field in InSb was obtained by redistribution of the interstitial In atoms (IIn) and vacanciens VIn under laser action. Comparison o...