Effect of thermal neutron irradiation on the electrophysical and photoelectric properties of Hg₀.₈Cd₀.₂Te crystals
We have studied experimentally the effect of thermal neutron irradiation on the electrophysical and photoelectric parameters of Hg₁₋xCdxTe crystals. The irradiation was shown to produce both donor- and acceptor-type radiation defects. In this case the majority charge carrier mobility decreases signi...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2000 |
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| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/120237 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Effect of thermal neutron irradiation on the electrophysical and photoelectric properties of Hg₀.₈Cd₀.₂Te crystals / I.S. Virt, V.V. Gorbunov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 35-38. — Бібліогр.: 13 назв. — англ. |
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Virt, I.S. Gorbunov, V.V. 2017-06-11T13:30:54Z 2017-06-11T13:30:54Z 2000 Effect of thermal neutron irradiation on the electrophysical and photoelectric properties of Hg₀.₈Cd₀.₂Te crystals / I.S. Virt, V.V. Gorbunov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 35-38. — Бібліогр.: 13 назв. — англ. 1560-8034 PACS 61.80, 72, 72.20 JV; https://nasplib.isofts.kiev.ua/handle/123456789/120237 We have studied experimentally the effect of thermal neutron irradiation on the electrophysical and photoelectric parameters of Hg₁₋xCdxTe crystals. The irradiation was shown to produce both donor- and acceptor-type radiation defects. In this case the majority charge carrier mobility decreases significantly. An analysis is given of a model for radiation defect production. The photoconduction processes are explained from the standpoint of clusterization of such radiation defects. Thermal neutron irradiation has been perfomed at the nuclear reactor of the Institute for Nuclear Researches NASU. The authors are grateful to Dr. M.V. Pashkovskii for his valuable remarks and interest to this work. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Effect of thermal neutron irradiation on the electrophysical and photoelectric properties of Hg₀.₈Cd₀.₂Te crystals Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Effect of thermal neutron irradiation on the electrophysical and photoelectric properties of Hg₀.₈Cd₀.₂Te crystals |
| spellingShingle |
Effect of thermal neutron irradiation on the electrophysical and photoelectric properties of Hg₀.₈Cd₀.₂Te crystals Virt, I.S. Gorbunov, V.V. |
| title_short |
Effect of thermal neutron irradiation on the electrophysical and photoelectric properties of Hg₀.₈Cd₀.₂Te crystals |
| title_full |
Effect of thermal neutron irradiation on the electrophysical and photoelectric properties of Hg₀.₈Cd₀.₂Te crystals |
| title_fullStr |
Effect of thermal neutron irradiation on the electrophysical and photoelectric properties of Hg₀.₈Cd₀.₂Te crystals |
| title_full_unstemmed |
Effect of thermal neutron irradiation on the electrophysical and photoelectric properties of Hg₀.₈Cd₀.₂Te crystals |
| title_sort |
effect of thermal neutron irradiation on the electrophysical and photoelectric properties of hg₀.₈cd₀.₂te crystals |
| author |
Virt, I.S. Gorbunov, V.V. |
| author_facet |
Virt, I.S. Gorbunov, V.V. |
| publishDate |
2000 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
We have studied experimentally the effect of thermal neutron irradiation on the electrophysical and photoelectric parameters of Hg₁₋xCdxTe crystals. The irradiation was shown to produce both donor- and acceptor-type radiation defects. In this case the majority charge carrier mobility decreases significantly. An analysis is given of a model for radiation defect production. The photoconduction processes are explained from the standpoint of clusterization of such radiation defects.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/120237 |
| citation_txt |
Effect of thermal neutron irradiation on the electrophysical and photoelectric properties of Hg₀.₈Cd₀.₂Te crystals / I.S. Virt, V.V. Gorbunov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 35-38. — Бібліогр.: 13 назв. — англ. |
| work_keys_str_mv |
AT virtis effectofthermalneutronirradiationontheelectrophysicalandphotoelectricpropertiesofhg08cd02tecrystals AT gorbunovvv effectofthermalneutronirradiationontheelectrophysicalandphotoelectricpropertiesofhg08cd02tecrystals |
| first_indexed |
2025-12-07T17:31:58Z |
| last_indexed |
2025-12-07T17:31:58Z |
| _version_ |
1850871610828914688 |