Evaluation of the efficiency of interband radiative recombination in high quality Si
It is shown theoretically that quantum efficiency of interband radiation in highly purified silicon with low concentration of deep impurities and defects can exceed 10% at room temperatures in the case of negligibly small surface recombination. Dependencies of quantum efficiency on intensity and wav...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 1999 |
| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/120242 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Evaluation of the efficiency of interband radiative recombination in high quality Si / A.V. Sachenko, Yu.V. Kryuchenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 55-60. — Бібліогр.: 17 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862748100894916608 |
|---|---|
| author | Sachenko, A.V. Kryuchenko, Yu.V. |
| author_facet | Sachenko, A.V. Kryuchenko, Yu.V. |
| citation_txt | Evaluation of the efficiency of interband radiative recombination in high quality Si / A.V. Sachenko, Yu.V. Kryuchenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 55-60. — Бібліогр.: 17 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | It is shown theoretically that quantum efficiency of interband radiation in highly purified silicon with low concentration of deep impurities and defects can exceed 10% at room temperatures in the case of negligibly small surface recombination. Dependencies of quantum efficiency on intensity and wavelength of exciting monochromatic light, surface recombination rate and thickness of silicon plate are discussed.
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| first_indexed | 2025-12-07T20:54:05Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-120242 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T20:54:05Z |
| publishDate | 1999 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Sachenko, A.V. Kryuchenko, Yu.V. 2017-06-11T13:39:42Z 2017-06-11T13:39:42Z 1999 Evaluation of the efficiency of interband radiative recombination in high quality Si / A.V. Sachenko, Yu.V. Kryuchenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 55-60. — Бібліогр.: 17 назв. — англ. 1560-8034 PACS 72.20.J, 78.55, 78.60 https://nasplib.isofts.kiev.ua/handle/123456789/120242 It is shown theoretically that quantum efficiency of interband radiation in highly purified silicon with low concentration of deep impurities and defects can exceed 10% at room temperatures in the case of negligibly small surface recombination. Dependencies of quantum efficiency on intensity and wavelength of exciting monochromatic light, surface recombination rate and thickness of silicon plate are discussed. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Evaluation of the efficiency of interband radiative recombination in high quality Si Article published earlier |
| spellingShingle | Evaluation of the efficiency of interband radiative recombination in high quality Si Sachenko, A.V. Kryuchenko, Yu.V. |
| title | Evaluation of the efficiency of interband radiative recombination in high quality Si |
| title_full | Evaluation of the efficiency of interband radiative recombination in high quality Si |
| title_fullStr | Evaluation of the efficiency of interband radiative recombination in high quality Si |
| title_full_unstemmed | Evaluation of the efficiency of interband radiative recombination in high quality Si |
| title_short | Evaluation of the efficiency of interband radiative recombination in high quality Si |
| title_sort | evaluation of the efficiency of interband radiative recombination in high quality si |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/120242 |
| work_keys_str_mv | AT sachenkoav evaluationoftheefficiencyofinterbandradiativerecombinationinhighqualitysi AT kryuchenkoyuv evaluationoftheefficiencyofinterbandradiativerecombinationinhighqualitysi |