Evaluation of the efficiency of interband radiative recombination in high quality Si
It is shown theoretically that quantum efficiency of interband radiation in highly purified silicon with low concentration of deep impurities and defects can exceed 10% at room temperatures in the case of negligibly small surface recombination. Dependencies of quantum efficiency on intensity and wav...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 1999 |
| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/120242 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Evaluation of the efficiency of interband radiative recombination in high quality Si / A.V. Sachenko, Yu.V. Kryuchenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 55-60. — Бібліогр.: 17 назв. — англ. |