Many-body effects in photoluminescence of heavily doped AlGaAs/InGaAs /GaAs heterostructures
A photoluminescence (PL) study of pseudomorphic modulation-doped AlxGa₁₋xAs/Iny Ga₁₋yAs/GaAs heterostructures possessing high electron density shows a fundamental change of the PL spectrum under excitation density increase. In its high energy tail the PL peak undergoes principal transformations caus...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 1999 |
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| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/120245 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Many-body effects in photoluminescence of heavily doped AlGaAs/InGaAs /GaAs heterostructures / Z.Ya. Zhuchenko, G.G. Tarasov, S.R. Lavorik, Yu.I. Mazur, M.Ya. Valakh, H. Kissel, W.T. Masselink, U. Mueller, C. Walther // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 5-9. — Бібліогр.: 15 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862548100111925248 |
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| author | Zhuchenko, Z.Ya. Tarasov, G.G. Lavorik, S.R. Mazur, Yu.I. Valakh, M.Ya. Kissel, H. Masselink, W.T. Mueller, U. Walther, C. |
| author_facet | Zhuchenko, Z.Ya. Tarasov, G.G. Lavorik, S.R. Mazur, Yu.I. Valakh, M.Ya. Kissel, H. Masselink, W.T. Mueller, U. Walther, C. |
| citation_txt | Many-body effects in photoluminescence of heavily doped AlGaAs/InGaAs /GaAs heterostructures / Z.Ya. Zhuchenko, G.G. Tarasov, S.R. Lavorik, Yu.I. Mazur, M.Ya. Valakh, H. Kissel, W.T. Masselink, U. Mueller, C. Walther // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 5-9. — Бібліогр.: 15 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | A photoluminescence (PL) study of pseudomorphic modulation-doped AlxGa₁₋xAs/Iny Ga₁₋yAs/GaAs heterostructures possessing high electron density shows a fundamental change of the PL spectrum under excitation density increase. In its high energy tail the PL peak undergoes principal transformations caused by repelling the Fermi-edge singularity (FES) and excitonic states. The character of repelling depends crucially on the excitation density and temperature. At low temperatures an appearance of the FES feature has been observed for the first time under excitation density elevation. This appearance is accompanied by formation of an abrupt high energy edge and occurs far below by intensity the hybridized n = 2 exciton manifestation. Strong screening of the n = 2 exciton state by photoexcited carriers is observed. The PL behavior under excitation density increase and temperature elevation near the Fermi edge is explained in terms of strong carrier density effect on the FES manifestation and is referred to the two-dimensional (2D) electron gas properties not yet explored theoretically.
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| first_indexed | 2025-11-25T18:29:07Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-120245 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-25T18:29:07Z |
| publishDate | 1999 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Zhuchenko, Z.Ya. Tarasov, G.G. Lavorik, S.R. Mazur, Yu.I. Valakh, M.Ya. Kissel, H. Masselink, W.T. Mueller, U. Walther, C. 2017-06-11T13:47:42Z 2017-06-11T13:47:42Z 1999 Many-body effects in photoluminescence of heavily doped AlGaAs/InGaAs /GaAs heterostructures / Z.Ya. Zhuchenko, G.G. Tarasov, S.R. Lavorik, Yu.I. Mazur, M.Ya. Valakh, H. Kissel, W.T. Masselink, U. Mueller, C. Walther // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 5-9. — Бібліогр.: 15 назв. — англ. 1560-8034 PACS: 78.55.Cr,73.40.Kp,71.27.+a https://nasplib.isofts.kiev.ua/handle/123456789/120245 A photoluminescence (PL) study of pseudomorphic modulation-doped AlxGa₁₋xAs/Iny Ga₁₋yAs/GaAs heterostructures possessing high electron density shows a fundamental change of the PL spectrum under excitation density increase. In its high energy tail the PL peak undergoes principal transformations caused by repelling the Fermi-edge singularity (FES) and excitonic states. The character of repelling depends crucially on the excitation density and temperature. At low temperatures an appearance of the FES feature has been observed for the first time under excitation density elevation. This appearance is accompanied by formation of an abrupt high energy edge and occurs far below by intensity the hybridized n = 2 exciton manifestation. Strong screening of the n = 2 exciton state by photoexcited carriers is observed. The PL behavior under excitation density increase and temperature elevation near the Fermi edge is explained in terms of strong carrier density effect on the FES manifestation and is referred to the two-dimensional (2D) electron gas properties not yet explored theoretically. This work is supported by NATO linkage grant. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Many-body effects in photoluminescence of heavily doped AlGaAs/InGaAs /GaAs heterostructures Article published earlier |
| spellingShingle | Many-body effects in photoluminescence of heavily doped AlGaAs/InGaAs /GaAs heterostructures Zhuchenko, Z.Ya. Tarasov, G.G. Lavorik, S.R. Mazur, Yu.I. Valakh, M.Ya. Kissel, H. Masselink, W.T. Mueller, U. Walther, C. |
| title | Many-body effects in photoluminescence of heavily doped AlGaAs/InGaAs /GaAs heterostructures |
| title_full | Many-body effects in photoluminescence of heavily doped AlGaAs/InGaAs /GaAs heterostructures |
| title_fullStr | Many-body effects in photoluminescence of heavily doped AlGaAs/InGaAs /GaAs heterostructures |
| title_full_unstemmed | Many-body effects in photoluminescence of heavily doped AlGaAs/InGaAs /GaAs heterostructures |
| title_short | Many-body effects in photoluminescence of heavily doped AlGaAs/InGaAs /GaAs heterostructures |
| title_sort | many-body effects in photoluminescence of heavily doped algaas/ingaas /gaas heterostructures |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/120245 |
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