Many-body effects in photoluminescence of heavily doped AlGaAs/InGaAs /GaAs heterostructures

A photoluminescence (PL) study of pseudomorphic modulation-doped AlxGa₁₋xAs/Iny Ga₁₋yAs/GaAs heterostructures possessing high electron density shows a fundamental change of the PL spectrum under excitation density increase. In its high energy tail the PL peak undergoes principal transformations caus...

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Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:1999
Main Authors: Zhuchenko, Z.Ya., Tarasov, G.G., Lavorik, S.R., Mazur, Yu.I., Valakh, M.Ya., Kissel, H., Masselink, W.T., Mueller, U., Walther, C.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 1999
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/120245
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Many-body effects in photoluminescence of heavily doped AlGaAs/InGaAs /GaAs heterostructures / Z.Ya. Zhuchenko, G.G. Tarasov, S.R. Lavorik, Yu.I. Mazur, M.Ya. Valakh, H. Kissel, W.T. Masselink, U. Mueller, C. Walther // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 5-9. — Бібліогр.: 15 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
_version_ 1862548100111925248
author Zhuchenko, Z.Ya.
Tarasov, G.G.
Lavorik, S.R.
Mazur, Yu.I.
Valakh, M.Ya.
Kissel, H.
Masselink, W.T.
Mueller, U.
Walther, C.
author_facet Zhuchenko, Z.Ya.
Tarasov, G.G.
Lavorik, S.R.
Mazur, Yu.I.
Valakh, M.Ya.
Kissel, H.
Masselink, W.T.
Mueller, U.
Walther, C.
citation_txt Many-body effects in photoluminescence of heavily doped AlGaAs/InGaAs /GaAs heterostructures / Z.Ya. Zhuchenko, G.G. Tarasov, S.R. Lavorik, Yu.I. Mazur, M.Ya. Valakh, H. Kissel, W.T. Masselink, U. Mueller, C. Walther // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 5-9. — Бібліогр.: 15 назв. — англ.
collection DSpace DC
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
description A photoluminescence (PL) study of pseudomorphic modulation-doped AlxGa₁₋xAs/Iny Ga₁₋yAs/GaAs heterostructures possessing high electron density shows a fundamental change of the PL spectrum under excitation density increase. In its high energy tail the PL peak undergoes principal transformations caused by repelling the Fermi-edge singularity (FES) and excitonic states. The character of repelling depends crucially on the excitation density and temperature. At low temperatures an appearance of the FES feature has been observed for the first time under excitation density elevation. This appearance is accompanied by formation of an abrupt high energy edge and occurs far below by intensity the hybridized n = 2 exciton manifestation. Strong screening of the n = 2 exciton state by photoexcited carriers is observed. The PL behavior under excitation density increase and temperature elevation near the Fermi edge is explained in terms of strong carrier density effect on the FES manifestation and is referred to the two-dimensional (2D) electron gas properties not yet explored theoretically.
first_indexed 2025-11-25T18:29:07Z
format Article
fulltext
id nasplib_isofts_kiev_ua-123456789-120245
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
issn 1560-8034
language English
last_indexed 2025-11-25T18:29:07Z
publishDate 1999
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
record_format dspace
spelling Zhuchenko, Z.Ya.
Tarasov, G.G.
Lavorik, S.R.
Mazur, Yu.I.
Valakh, M.Ya.
Kissel, H.
Masselink, W.T.
Mueller, U.
Walther, C.
2017-06-11T13:47:42Z
2017-06-11T13:47:42Z
1999
Many-body effects in photoluminescence of heavily doped AlGaAs/InGaAs /GaAs heterostructures / Z.Ya. Zhuchenko, G.G. Tarasov, S.R. Lavorik, Yu.I. Mazur, M.Ya. Valakh, H. Kissel, W.T. Masselink, U. Mueller, C. Walther // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 5-9. — Бібліогр.: 15 назв. — англ.
1560-8034
PACS: 78.55.Cr,73.40.Kp,71.27.+a
https://nasplib.isofts.kiev.ua/handle/123456789/120245
A photoluminescence (PL) study of pseudomorphic modulation-doped AlxGa₁₋xAs/Iny Ga₁₋yAs/GaAs heterostructures possessing high electron density shows a fundamental change of the PL spectrum under excitation density increase. In its high energy tail the PL peak undergoes principal transformations caused by repelling the Fermi-edge singularity (FES) and excitonic states. The character of repelling depends crucially on the excitation density and temperature. At low temperatures an appearance of the FES feature has been observed for the first time under excitation density elevation. This appearance is accompanied by formation of an abrupt high energy edge and occurs far below by intensity the hybridized n = 2 exciton manifestation. Strong screening of the n = 2 exciton state by photoexcited carriers is observed. The PL behavior under excitation density increase and temperature elevation near the Fermi edge is explained in terms of strong carrier density effect on the FES manifestation and is referred to the two-dimensional (2D) electron gas properties not yet explored theoretically.
This work is supported by NATO linkage grant.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Many-body effects in photoluminescence of heavily doped AlGaAs/InGaAs /GaAs heterostructures
Article
published earlier
spellingShingle Many-body effects in photoluminescence of heavily doped AlGaAs/InGaAs /GaAs heterostructures
Zhuchenko, Z.Ya.
Tarasov, G.G.
Lavorik, S.R.
Mazur, Yu.I.
Valakh, M.Ya.
Kissel, H.
Masselink, W.T.
Mueller, U.
Walther, C.
title Many-body effects in photoluminescence of heavily doped AlGaAs/InGaAs /GaAs heterostructures
title_full Many-body effects in photoluminescence of heavily doped AlGaAs/InGaAs /GaAs heterostructures
title_fullStr Many-body effects in photoluminescence of heavily doped AlGaAs/InGaAs /GaAs heterostructures
title_full_unstemmed Many-body effects in photoluminescence of heavily doped AlGaAs/InGaAs /GaAs heterostructures
title_short Many-body effects in photoluminescence of heavily doped AlGaAs/InGaAs /GaAs heterostructures
title_sort many-body effects in photoluminescence of heavily doped algaas/ingaas /gaas heterostructures
url https://nasplib.isofts.kiev.ua/handle/123456789/120245
work_keys_str_mv AT zhuchenkozya manybodyeffectsinphotoluminescenceofheavilydopedalgaasingaasgaasheterostructures
AT tarasovgg manybodyeffectsinphotoluminescenceofheavilydopedalgaasingaasgaasheterostructures
AT lavoriksr manybodyeffectsinphotoluminescenceofheavilydopedalgaasingaasgaasheterostructures
AT mazuryui manybodyeffectsinphotoluminescenceofheavilydopedalgaasingaasgaasheterostructures
AT valakhmya manybodyeffectsinphotoluminescenceofheavilydopedalgaasingaasgaasheterostructures
AT kisselh manybodyeffectsinphotoluminescenceofheavilydopedalgaasingaasgaasheterostructures
AT masselinkwt manybodyeffectsinphotoluminescenceofheavilydopedalgaasingaasgaasheterostructures
AT muelleru manybodyeffectsinphotoluminescenceofheavilydopedalgaasingaasgaasheterostructures
AT waltherc manybodyeffectsinphotoluminescenceofheavilydopedalgaasingaasgaasheterostructures