Many-body effects in photoluminescence of heavily doped AlGaAs/InGaAs /GaAs heterostructures

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 1999
• Main Authors: Zhuchenko, Z.Ya., Tarasov, G.G., Lavorik, S.R., Mazur, Yu.I., Valakh, M.Ya., Kissel, H., Masselink, W.T., Mueller, U., Walther, C.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 1999
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/120245
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Many-body effects in photoluminescence of heavily doped AlGaAs/InGaAs /GaAs heterostructures / Z.Ya. Zhuchenko, G.G. Tarasov, S.R. Lavorik, Yu.I. Mazur, M.Ya. Valakh, H. Kissel, W.T. Masselink, U. Mueller, C. Walther // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 5-9. — Бібліогр.: 15 назв. — англ.

A photoluminescence (PL) study of pseudomorphic modulation-doped AlxGa₁₋xAs/Iny Ga₁₋yAs/GaAs heterostructures possessing high electron density shows a fundamental change of the PL spectrum under excitation density increase. In its high energy tail the PL peak undergoes principal transformations caus...