Investigation of the undersurface damaged layers in silicon wafers
The undersurface damaged layers of the silicon wafers were studied by electroreflectance method. These damaged layers could be created at cutting or standard treatment (ST) of the silicon wafers. The silicon substrates were layer by layer etched in the polishing etching solution for investigation of...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 1999 |
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/120247 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Investigation of the undersurface damaged layers in silicon wafers / R.Yu. Holiney, L.A. Matveeva, E.F. Venger // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 10-12. — Бібліогр.: 11 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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Holiney, R.Yu. Matveeva, L.A. Venger, E.F. 2017-06-11T13:49:20Z 2017-06-11T13:49:20Z 1999 Investigation of the undersurface damaged layers in silicon wafers / R.Yu. Holiney, L.A. Matveeva, E.F. Venger // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 10-12. — Бібліогр.: 11 назв. — англ. 1560-8034 PACS: 71.25Rk, 81.60Cp. https://nasplib.isofts.kiev.ua/handle/123456789/120247 The undersurface damaged layers of the silicon wafers were studied by electroreflectance method. These damaged layers could be created at cutting or standard treatment (ST) of the silicon wafers. The silicon substrates were layer by layer etched in the polishing etching solution for investigation of the undersurface damaged layers. Surface and undersurface layers were qualified by the phenomenological parameter of broadening (PPB) from the electroreflectance spectra. The concealed undersurface damaged layers with thickness 25 µm were observed on the ST samples. The PPB decreased with exponential rule for the samples after cutting and achieved the permanent value on the depth 125 µm. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Investigation of the undersurface damaged layers in silicon wafers Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Investigation of the undersurface damaged layers in silicon wafers |
| spellingShingle |
Investigation of the undersurface damaged layers in silicon wafers Holiney, R.Yu. Matveeva, L.A. Venger, E.F. |
| title_short |
Investigation of the undersurface damaged layers in silicon wafers |
| title_full |
Investigation of the undersurface damaged layers in silicon wafers |
| title_fullStr |
Investigation of the undersurface damaged layers in silicon wafers |
| title_full_unstemmed |
Investigation of the undersurface damaged layers in silicon wafers |
| title_sort |
investigation of the undersurface damaged layers in silicon wafers |
| author |
Holiney, R.Yu. Matveeva, L.A. Venger, E.F. |
| author_facet |
Holiney, R.Yu. Matveeva, L.A. Venger, E.F. |
| publishDate |
1999 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
The undersurface damaged layers of the silicon wafers were studied by electroreflectance method. These damaged layers could be created at cutting or standard treatment (ST) of the silicon wafers. The silicon substrates were layer by layer etched in the polishing etching solution for investigation of the undersurface damaged layers. Surface and undersurface layers were qualified by the phenomenological parameter of broadening (PPB) from the electroreflectance spectra. The concealed undersurface damaged layers with thickness 25 µm were observed on the ST samples. The PPB decreased with exponential rule for the samples after cutting and achieved the permanent value on the depth 125 µm.
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| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/120247 |
| citation_txt |
Investigation of the undersurface damaged layers in silicon wafers / R.Yu. Holiney, L.A. Matveeva, E.F. Venger // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 10-12. — Бібліогр.: 11 назв. — англ. |
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AT holineyryu investigationoftheundersurfacedamagedlayersinsiliconwafers AT matveevala investigationoftheundersurfacedamagedlayersinsiliconwafers AT vengeref investigationoftheundersurfacedamagedlayersinsiliconwafers |
| first_indexed |
2025-12-07T15:45:46Z |
| last_indexed |
2025-12-07T15:45:46Z |
| _version_ |
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