Investigation of the undersurface damaged layers in silicon wafers
The undersurface damaged layers of the silicon wafers were studied by electroreflectance method. These damaged layers could be created at cutting or standard treatment (ST) of the silicon wafers. The silicon substrates were layer by layer etched in the polishing etching solution for investigation of...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 1999 |
| Автори: | , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/120247 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Investigation of the undersurface damaged layers in silicon wafers / R.Yu. Holiney, L.A. Matveeva, E.F. Venger // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 10-12. — Бібліогр.: 11 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862680132784750592 |
|---|---|
| author | Holiney, R.Yu. Matveeva, L.A. Venger, E.F. |
| author_facet | Holiney, R.Yu. Matveeva, L.A. Venger, E.F. |
| citation_txt | Investigation of the undersurface damaged layers in silicon wafers / R.Yu. Holiney, L.A. Matveeva, E.F. Venger // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 10-12. — Бібліогр.: 11 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The undersurface damaged layers of the silicon wafers were studied by electroreflectance method. These damaged layers could be created at cutting or standard treatment (ST) of the silicon wafers. The silicon substrates were layer by layer etched in the polishing etching solution for investigation of the undersurface damaged layers. Surface and undersurface layers were qualified by the phenomenological parameter of broadening (PPB) from the electroreflectance spectra. The concealed undersurface damaged layers with thickness 25 µm were observed on the ST samples. The PPB decreased with exponential rule for the samples after cutting and achieved the permanent value on the depth 125 µm.
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| first_indexed | 2025-12-07T15:45:46Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-120247 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T15:45:46Z |
| publishDate | 1999 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Holiney, R.Yu. Matveeva, L.A. Venger, E.F. 2017-06-11T13:49:20Z 2017-06-11T13:49:20Z 1999 Investigation of the undersurface damaged layers in silicon wafers / R.Yu. Holiney, L.A. Matveeva, E.F. Venger // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 10-12. — Бібліогр.: 11 назв. — англ. 1560-8034 PACS: 71.25Rk, 81.60Cp. https://nasplib.isofts.kiev.ua/handle/123456789/120247 The undersurface damaged layers of the silicon wafers were studied by electroreflectance method. These damaged layers could be created at cutting or standard treatment (ST) of the silicon wafers. The silicon substrates were layer by layer etched in the polishing etching solution for investigation of the undersurface damaged layers. Surface and undersurface layers were qualified by the phenomenological parameter of broadening (PPB) from the electroreflectance spectra. The concealed undersurface damaged layers with thickness 25 µm were observed on the ST samples. The PPB decreased with exponential rule for the samples after cutting and achieved the permanent value on the depth 125 µm. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Investigation of the undersurface damaged layers in silicon wafers Article published earlier |
| spellingShingle | Investigation of the undersurface damaged layers in silicon wafers Holiney, R.Yu. Matveeva, L.A. Venger, E.F. |
| title | Investigation of the undersurface damaged layers in silicon wafers |
| title_full | Investigation of the undersurface damaged layers in silicon wafers |
| title_fullStr | Investigation of the undersurface damaged layers in silicon wafers |
| title_full_unstemmed | Investigation of the undersurface damaged layers in silicon wafers |
| title_short | Investigation of the undersurface damaged layers in silicon wafers |
| title_sort | investigation of the undersurface damaged layers in silicon wafers |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/120247 |
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