Buchumschlag

Investigation of the undersurface damaged layers in silicon wafers

The undersurface damaged layers of the silicon wafers were studied by electroreflectance method. These damaged layers could be created at cutting or standard treatment (ST) of the silicon wafers. The silicon substrates were layer by layer etched in the polishing etching solution for investigation of...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:	1999
Hauptverfasser:	Holiney, R.Yu., Matveeva, L.A., Venger, E.F.
Format:	Artikel
Sprache:	Englisch
Veröffentlicht:	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 1999
Online Zugang:	https://nasplib.isofts.kiev.ua/handle/123456789/120247
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:	Investigation of the undersurface damaged layers in silicon wafers / R.Yu. Holiney, L.A. Matveeva, E.F. Venger // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 10-12. — Бібліогр.: 11 назв. — англ.

Institution

Digital Library of Periodicals of National Academy of Sciences of Ukraine

Ähnliche Einträge

Electroreflectance spectroscopy and scanning electron microscopy study of microrelief silicon wafers with various surface pretreatments
von: Gorbach, T.Ya., et al.
Veröffentlicht: (1998)

Recombination characteristics of single-crystalline silicon wafers with a damaged near-surface layer
von: A. V. Sachenko, et al.
Veröffentlicht: (2013)

Recombination characteristics of single-crystalline silicon wafers with a damaged near-surface layer
von: A. V. Sachenko, et al.
Veröffentlicht: (2013)

Electron beam application for mechanical stress relaxation and for SI-SIO₂ interface structural regulation
von: Matveeva, L.A., et al.
Veröffentlicht: (1999)

Influence of neutron irradiation on elctrooptical and structural properties of silicon
von: Groza, A.A., et al.
Veröffentlicht: (2001)

The structure of the undersurface layer of alloys in the region of influence of the relativistic tube-like electron beam and thermodynamic models
von: Klepikov, V.F., et al.
Veröffentlicht: (2004)

The process of forming the polycrystalline silicon wafer from the powder raw material and analyzing the impurity composition of their surface
von: R. Aliev, et al.
Veröffentlicht: (2011)

Balance model for contactless chemo-mechanical polishing of wafers
von: Grigoriev, N.N., et al.
Veröffentlicht: (2002)

The features of phonon component of linear dichroism in uniaxially strained silicon crystals
von: Serdega, B.K., et al.
Veröffentlicht: (2003)

Quantum-size effects in semiconductor heterosystems
von: Matveeva, L.A., et al.
Veröffentlicht: (2017)

Analysis of the fundamental absorption edge of the films obtained from the C₆₀ fullerene molecular beam in vacuum and effect of internal mechanical stresses on it
von: Kolyadina, E.Yu., et al.
Veröffentlicht: (2015)

Investigation of damaged layer formed at mechanical treatment of sapphire using three-crystal X-ray diffraction method
von: Tkachenko, V.F., et al.
Veröffentlicht: (2014)

Electronic properties of silicon surface at different oxide film conditions
von: Kirillova, S.I., et al.
Veröffentlicht: (2001)

Investigation of photovoltaic and optical properties of self-organized organic-inorganic hybrids using aromatic drugs and patterned silicon
von: Ya. Gorbach, et al.
Veröffentlicht: (2014)

Investigation of photovoltaic and optical properties of self-organized organic-inorganic hybrids using aromatic drugs and patterned silicon
von: Ya. Gorbach, et al.
Veröffentlicht: (2014)

Model of smoothing roughness on GaAs wafer surface by using nonabrasive chemical-and-mechanical polishing
von: A. V. Fomin, et al.
Veröffentlicht: (2017)

Effect of oxidation of catalytically active silicon-based electrodes on water decomposition
von: Primachenko, V.E., et al.
Veröffentlicht: (2007)

Model of smoothing roughness on GaAs wafer surface by using nonabrasive chemical-and-mechanical polishing
von: Fomin, A.V., et al.
Veröffentlicht: (2017)

Effects of interband phototunneling and filling the bands in electroreflectance spectra of germanium
von: Gentsar, P.A., et al.
Veröffentlicht: (2003)

Ultrasound effect on radiation damages in boron implanted silicon
von: Romanjuk, B., et al.
Veröffentlicht: (2000)

Characteristics of gettering process in multicrystalline Si wafers with combined porous Si/Al getters
von: A. Sarikov, et al.
Veröffentlicht: (2012)

Characteristics of gettering process in multicrystalline Si wafers with combined porous Si/Al getters
von: Sarikov, A., et al.
Veröffentlicht: (2012)

Photocatalysis and optical properties of ZnO nanostructures grown by MOCVD on Si, Au/Si and Ag/Si wafers
von: V. A. Karpyna, et al.
Veröffentlicht: (2023)

Peculiarities of injection phenomena in heavily doped silicon structures and development of radiation-resistant diode temperature sensors
von: Shwarts, Yu.M., et al.
Veröffentlicht: (2003)

Photoluminescent films of nanocrystalline silicon doped with metals
von: Kaganovich, E.B., et al.
Veröffentlicht: (2002)

Investigation of cadmium telluride films on silicon substrate
von: Odarych, V.A., et al.
Veröffentlicht: (2005)

Investigations of impurity gettering in multicrystalline silicon
von: Evtukh, A.A., et al.
Veröffentlicht: (2001)

Modeling the process of removal aimed at cut traces on semiconductor wafers by using the method of contactless chemical-and-dynamical polishing
von: G. A. Pashchenko, et al.
Veröffentlicht: (2015)

Modeling the process of removal aimed at cut traces on semiconductor wafers by using the method of contactless chemical-and-dynamical polishing
von: Pashchenko, G.A., et al.
Veröffentlicht: (2015)

Low-frequency noise in nFinFETs of different dimensions processed in strained and non-strained SOI wafers
von: Lukyanchikova, N., et al.
Veröffentlicht: (2008)

Investigation of ZnO single crystals subjected to a high uniform magnetic field in the IR spectral range
von: Venger, E.F., et al.
Veröffentlicht: (2008)

Application of nanoindentation for investigation of radiation damage in SS316 stainless steel
von: Tolmachova, G.N., et al.
Veröffentlicht: (2015)

Dispersion of natural modes in a many-layer planar system
von: Goncharenko, A.V., et al.
Veröffentlicht: (2000)

Coupled Processes of Deformation and Long-Term Damageability of Physically Nonlinear Layered Materials
von: L. P. Khoroshun, et al.
Veröffentlicht: (2013)

The prospects of use of silicon photodiodes for registration alpha, beta radiation and neutrons
von: Voronkin, E.F., et al.
Veröffentlicht: (2016)

Investigation by acoustic emission method of the kinetics of damage accumulation at fracture of materials
von: Ja. Nedoseka, et al.
Veröffentlicht: (2018)

Zn and Mn impurity effect on electron and luminescent properties of porous silicon
von: Primachenko, V.E, et al.
Veröffentlicht: (2005)

Functionalization and nanostructurization of surface layers of porous silicon
von: Ye. I. Zubko
Veröffentlicht: (2013)

Investigation of transient processes in a silicon p+pn+ structure
von: O. A. Abdulkhaev, et al.
Veröffentlicht: (2011)

Thermostress State of Layered Bodies of Revolution with Allowance for the Damage of Materials under Deformation
von: V. G. Savchenko, et al.
Veröffentlicht: (2018)