Micro-Raman study of CNx composites subjected to high pressure treatment

CNx films were deposited by reactive ion-plasma sputtering of a graphite target in an argon-nitrogen-acetone vapor atmosphere onto molybdenum substrates. After deposition the CNx composites were cut from substrates, formed in pellets of 6 mm in diameter, and subjected to a high pressure-high tempera...

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Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:1999
Main Authors: Klyui, N.I., Valakh, M.Ya., Visotski, V.G., Pascual, J., Mestres, N., Novikov, N.V., Petrusha, I.A., Voronkin, M.A., Zaika, N.I.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 1999
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/120248
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Micro-Raman study of CNx composites subjected to high pressure treatment / N.I. Klyui, M.Ya. Valakh, V.G. Visotski, J. Pascual, N. Mestres, N.V. Novikov, I.A. Petrusha, M.A. Voronkin, N.I.Zaika // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 13-18. — Бібліогр.: 23 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-120248
record_format dspace
spelling Klyui, N.I.
Valakh, M.Ya.
Visotski, V.G.
Pascual, J.
Mestres, N.
Novikov, N.V.
Petrusha, I.A.
Voronkin, M.A.
Zaika, N.I.
2017-06-11T13:58:29Z
2017-06-11T13:58:29Z
1999
Micro-Raman study of CNx composites subjected to high pressure treatment / N.I. Klyui, M.Ya. Valakh, V.G. Visotski, J. Pascual, N. Mestres, N.V. Novikov, I.A. Petrusha, M.A. Voronkin, N.I.Zaika // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 13-18. — Бібліогр.: 23 назв. — англ.
1560-8034
PACS: 78.30.Na.81.05.Tp, 62.50.+p.
https://nasplib.isofts.kiev.ua/handle/123456789/120248
CNx films were deposited by reactive ion-plasma sputtering of a graphite target in an argon-nitrogen-acetone vapor atmosphere onto molybdenum substrates. After deposition the CNx composites were cut from substrates, formed in pellets of 6 mm in diameter, and subjected to a high pressure-high temperature treatment at 7.7 GPa and 2000⁰C for 60 seconds. Micro-Raman spectroscopy, microhardness and X-ray diffraction were used for the sample characterization. After treatment the CNx material leads to the formation of a number of highly ordered diamond crystals showing an extraordinarily low broadening of the 1332 cm⁻¹ Raman-line (∆n = 2.43 cm⁻¹). Besides, the Raman spectra of the matrix surrounding the diamond crystals show an additional band at ~1621 cm⁻¹ with a Raman intensity that strongly depends on the distance from the crystals. We propose that this band is related to the formation of rombohedral graphite in the treated sample and the corresponding effect of puckering of the graphite layers. The double-well potential model earlier proposed to describe diamond-like amorphous carbon has been used here for a qualitative description of the graphite-diamond phase-structural transformation.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Micro-Raman study of CNx composites subjected to high pressure treatment
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Micro-Raman study of CNx composites subjected to high pressure treatment
spellingShingle Micro-Raman study of CNx composites subjected to high pressure treatment
Klyui, N.I.
Valakh, M.Ya.
Visotski, V.G.
Pascual, J.
Mestres, N.
Novikov, N.V.
Petrusha, I.A.
Voronkin, M.A.
Zaika, N.I.
title_short Micro-Raman study of CNx composites subjected to high pressure treatment
title_full Micro-Raman study of CNx composites subjected to high pressure treatment
title_fullStr Micro-Raman study of CNx composites subjected to high pressure treatment
title_full_unstemmed Micro-Raman study of CNx composites subjected to high pressure treatment
title_sort micro-raman study of cnx composites subjected to high pressure treatment
author Klyui, N.I.
Valakh, M.Ya.
Visotski, V.G.
Pascual, J.
Mestres, N.
Novikov, N.V.
Petrusha, I.A.
Voronkin, M.A.
Zaika, N.I.
author_facet Klyui, N.I.
Valakh, M.Ya.
Visotski, V.G.
Pascual, J.
Mestres, N.
Novikov, N.V.
Petrusha, I.A.
Voronkin, M.A.
Zaika, N.I.
publishDate 1999
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description CNx films were deposited by reactive ion-plasma sputtering of a graphite target in an argon-nitrogen-acetone vapor atmosphere onto molybdenum substrates. After deposition the CNx composites were cut from substrates, formed in pellets of 6 mm in diameter, and subjected to a high pressure-high temperature treatment at 7.7 GPa and 2000⁰C for 60 seconds. Micro-Raman spectroscopy, microhardness and X-ray diffraction were used for the sample characterization. After treatment the CNx material leads to the formation of a number of highly ordered diamond crystals showing an extraordinarily low broadening of the 1332 cm⁻¹ Raman-line (∆n = 2.43 cm⁻¹). Besides, the Raman spectra of the matrix surrounding the diamond crystals show an additional band at ~1621 cm⁻¹ with a Raman intensity that strongly depends on the distance from the crystals. We propose that this band is related to the formation of rombohedral graphite in the treated sample and the corresponding effect of puckering of the graphite layers. The double-well potential model earlier proposed to describe diamond-like amorphous carbon has been used here for a qualitative description of the graphite-diamond phase-structural transformation.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/120248
citation_txt Micro-Raman study of CNx composites subjected to high pressure treatment / N.I. Klyui, M.Ya. Valakh, V.G. Visotski, J. Pascual, N. Mestres, N.V. Novikov, I.A. Petrusha, M.A. Voronkin, N.I.Zaika // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 13-18. — Бібліогр.: 23 назв. — англ.
work_keys_str_mv AT klyuini microramanstudyofcnxcompositessubjectedtohighpressuretreatment
AT valakhmya microramanstudyofcnxcompositessubjectedtohighpressuretreatment
AT visotskivg microramanstudyofcnxcompositessubjectedtohighpressuretreatment
AT pascualj microramanstudyofcnxcompositessubjectedtohighpressuretreatment
AT mestresn microramanstudyofcnxcompositessubjectedtohighpressuretreatment
AT novikovnv microramanstudyofcnxcompositessubjectedtohighpressuretreatment
AT petrushaia microramanstudyofcnxcompositessubjectedtohighpressuretreatment
AT voronkinma microramanstudyofcnxcompositessubjectedtohighpressuretreatment
AT zaikani microramanstudyofcnxcompositessubjectedtohighpressuretreatment
first_indexed 2025-11-30T22:39:38Z
last_indexed 2025-11-30T22:39:38Z
_version_ 1850858672341647360